MTP2301N3

Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 1/9
CYStech Electronics Corp.
20V P-Channel Enhancement Mode MOSFET
MTP2301N3
BVDSS
-20V
ID
RDSON(TYP)@VGS=-4.5V, ID=-2.8A
-3.4A
79mΩ
RDSON(TYP)@VGS=-2.5V, ID=-2A
116mΩ
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTP2301N3
SOT-23
D
G
S
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTP2301N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25°C, VGS=-4.5V
Continuous Drain Current @TA=70°C, VGS=-4.5V
Pulsed Drain Current
Ta=25℃
Maximum Power Dissipation
Symbol
VDS
VGS
Limits
-20
±8
-3.4
-2.7
-10
1.38 (Note)
ID
IDM
PD
Ta=70℃
Operating Junction and Storage Temperature Range
0.88 (Note)
-55~+150
Tj ; Tstg
Unit
V
V
A
W
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Lead Temperature, for 5 second soldering(1/8” from case)
Symbol
Limit
Unit
Rth,ja
TL
90 (Note)
260
°C/W
°C
Note : Surface mounted on 1 in ²FR-4 board with 2 oz. copper, t≦5sec; 270°C/W when mounted on minimum copper pad.
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
MTP2301N3
Min.
Typ.
Max.
Unit
-20
-0.45
-
79
116
6.3
±100
-1
100
150
-
V
V
nA
µA
-
446
57
52
9.2
7.3
38
12
3
0.8
1.1
20
60
50
20
10
-
Test Conditions
S
VGS=0, ID=-250µA
VDS=VGS, ID=-250µA
VGS=±8V, VDS=0
VDS=-16V, VGS=0
ID=-2.8A, VGS=-4.5V
ID=-2A, VGS=-2.5V
VDS=-5V, ID=-2.8A
pF
VDS=-10V, VGS=0, f=1MHz
ns
VDD=-10V, ID=-1A, RL=6Ω, VGEN=-4.5V,
RG=6Ω
nC
VDS=-10V, ID=-3A, VGS=-2.5V,
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Source-Drain Diode
IS
VSD
trr*
Qrr*
-
-0.86
30
25
-1.6
-1.2
-
A
V
ns
nC
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 3/9
VGS=0V, IS=-1.6A
IF=-3A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
Recommended Soldering Footprint
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
-VGS=5V
-VGS=4V
-ID, Drain Current (A)
20
15
-VGS=3V
10
-VGS=2V
5
30
-BVDSS, Drain-Source Breakdown Voltage
(V)
25
25
20
ID=-250μA,
VGS=0V
-VGS=1V
15
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VGS=1.5V
-VGS=2V
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
100
-VGS=2.5V
-VGS=4.5V
Tj=25°C
VGS=0V
1
0.8
Tj=150°C
0.6
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
-IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
120
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
360
ID=-2.8A
320
280
240
200
160
120
80
VGS=-4.5V, ID=-2.8A
100
80
60
40
20
40
0
MTP2301N3
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1
1000
100
-VGS(th) ,Threshold Voltage-(V)
Capacitance---(pF)
Ciss
C oss
Crss
0.6
ID=-250μA
0.4
0.2
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
-VGS, Gate-Source Voltage(V)
30
20
10
4
VDS=-10V
ID=-3A
3
2
1
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
2
4
6
Qg, Total Gate Charge(nC)
8
Maximum Drain Current vs JunctionTemperature
100
4
-ID, Maximum Drain Current(A)
-ID, Drain Current (A)
60 80 100 120 140 160
Gate Charge Characteristics
TJ(MAX) =150°C
TA=25°C
0
0.001
20 40
5
50
40
0
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note 1 on page 2)
Power (W)
ID=-1mA
0.8
10μs
10
100μs
1ms
10ms
1
100ms
TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=90°C/W
Single Pulse
0.1
DC
0.01
3.5
3
2.5
2
1.5
1
0.5
TA=25°C, VGS=-10V
0
0.01
MTP2301N3
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
1.6
30
-VDS=5V
1.4
PD, Power Dissipation(W)
-ID, Drain Current (A)
25
20
15
10
5
Mounted on FR-4 board
with 1 in² pad area
1.2
1
0.8
0.6
0.4
0.2
0
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
6
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*ZθJC(t)
4.RθJA=90 °C/W
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP2301N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2014.10.16
Page No. : 9/9
SOT-23 Dimension
Marking:
01□□
Device Code
Date Code
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
Date Code Rule :
First code : Year code, the last digit of Christian year
Second code : Month code, 1→Jan, 2→Feb, 3→Mar, …, 9→Sep, A→Oct, B→Nov, C→Dec
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2301N3
CYStek Product Specification