CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD2195J3 Description Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 1/6 120V 4A 600mΩ The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. RoHS compliant package process is adopted. Equivalent Circuit Outline BTD2195J3 TO-252 C B E B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%. BTD2195J3 Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg Limits Unit 130 120 5 4 6 (Note ) 1.5 20 83.3 6.25 150 -55~+150 V V V A A W W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VCE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 Cob Min. 120 130 - Typ. - 600 1000 300 - - Max. 1 2 2 1.25 1.5 2.2 200 Unit V V mA mA mA V V V pF Test Conditions IC=1mA, IB=0 IC=100μA, IE=0 VCB=100V, IE=0 VCE=50V, IE=0 VEB=5V, IC=0 IC=2A, IB=8mA IC=2A, IB=2mA VCE=4V, IC=2A VCE=3V, IC=1A VCE=3V, IC=2A VCE=3V, IC=4A VCB=10V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTD2195J3 BTD2195J3 Package TO-252 (RoHS compliant) Shipping Marking 2500 pcs / Tape & Reel D2195 CYStek Product Specification Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 10000 Saturation Voltage---(mV) Current Gain---HFE VCE = 4V 1000 100 10 1000 100 1 1 10 100 1000 10000 1 Collector Current---IC(mA) 1000 10000 On voltage vs Collector Current 10000 10000 VBE (SAT)@IC = 250IB VBE (ON) @VCE = 4V On voltage---(mV) Saturation Voltage---(mV) 100 Collector Current---I C (mA) Saturation Voltage vs Collector Current 1000 100 1000 100 10 1 10 100 1000 1 10000 Collector Current---I C (mA) 10 100 1000 10000 Collector Current---I C (mA) Power Derating Curve Power Derating Curve 1.75 25 1.5 Power Dissipation---PD(W) Power Dissipation---PD(W) 10 1.25 1 0.75 0.5 0.25 20 15 10 5 0 0 0 BTD2195J3 50 100 150 Ambient Temperature---TA(℃) 200 0 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTD2195J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature BTD2195J3 Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 6/6 TO-252 Dimension C A Marking: D B D2195 G F L 3 H E K Style: Pin 1.Base 2.Collector 3.Emitter 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2195J3 CYStek Product Specification