MTP2311N3

Spec. No. : C733N3
Issued Date : 2007.06.13
Revised Date :2015.08.20
Page No. : 1/9
CYStech Electronics Corp.
-60V P-Channel Enhancement Mode MOSFET
MTP2311N3
Features
BVDSS
ID @ VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.5V,ID=-1.7A
-60V
-3.5A
72mΩ(typ)
98mΩ(typ)
• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating package
Symbol
Outline
MTP2311N3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTP2311N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTP2311N3
CYStek Product Specification
Spec. No. : C733N3
Issued Date : 2007.06.13
Revised Date :2015.08.20
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C , VGS=-10V (Note 3)
Continuous Drain Current @ TA=100°C, VGS=-10V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation
Linear Derating Factor
(Note 3)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
Unit
IDM
PD
Limits
-60
±20
-3.5
-2.2
-14
1.38
Tj ; Tstg
0.01
-55~+150
W/°C
°C
ID
V
A
W
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Symbol
Limit
Unit
Rth,ja
90
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
MTP2311N3
Min.
Typ.
Max.
Unit
-60
-1.0
-
0.04
-1.8
72
98
5.8
-3.0
±100
-1
-25
90
120
-
V
V/°C
V
nA
-
962
56
40
5.9
5.7
19.2
6
-
Test Conditions
S
VGS=0V, ID=-250μA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-48V, VGS=0V
VDS=-48V, VGS=0V (Tj=70°C)
ID=-2A, VGS=-10V
ID=-1.7A, VGS=-4.5V
VDS=-5V, ID=-3A
pF
VDS=-20V, VGS=0V, f=1MHz
ns
VDS=-20V, ID=-1A, VGS=-10V
RG=6Ω
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
Trr
Qrr
-
11
3.4
3.4
-
-
12
7
-3.5
-14
-1.3
-
nC
Spec. No. : C733N3
Issued Date : 2007.06.13
Revised Date :2015.08.20
Page No. : 3/9
VDS=-30V, ID=-3.5A, VGS=-10V
A
V
ns
nC
VGS=0V, IF=IS
VGS=0V, IF=-3.5A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTP2311N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733N3
Issued Date : 2007.06.13
Revised Date :2015.08.20
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
6V
4.5V
15
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-ID, Drain Current (A)
20
-VGS=4V
-VGS=3.5V
10
-VGS=3V
5
1.2
1
0.8
ID=-250μA,
VGS=0V
-VGS=2.5V
0.6
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-3.5V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-4V
VGS=-3V
100
VGS=-4.5V
10
0.001
VGS=-10V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
-IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2.4
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
180
160
140
ID=-2A
ID=-1.7A
120
100
80
60
40
2.2
2
VGS=-10V, ID=-2A
RDSON@Tj=25°C : 71mΩ typ.
1.8
1.6
1.4
1.2
1
0.8
VGS=-4.5V, ID=-1.7A
RDSON@Tj=25°C : 95mΩ typ.
0.6
20
0.4
0
0
MTP2311N3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C733N3
Issued Date : 2007.06.13
Revised Date :2015.08.20
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Gate Charge Characteristics
10
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=-10V
Pulsed
Ta=25°C
0.01
0.001
8
VDS=-30V
ID=-3.5A
6
4
2
0
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
2
4
6
8
10
Qg, Total Gate Charge(nC)
12
14
Maximum Drain Current vs JunctionTemperature
100
4.5
ID, Maximum Drain Current(A)
1ms
-I D, Drain Current (A)
0
100μs
10
1
10ms
100ms
0.1
TA=25°C, Tj=150°C
VGS=-10V, RθJA=90°C/W
Single Pulse
DC
0.01
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-10V, RθJA=90°C/W
0.5
0
0.01
MTP2311N3
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C733N3
Issued Date : 2007.06.13
Revised Date :2015.08.20
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
1.6
PD, Power Dissipation(W)
1.4
Mounted on FR-4 board
with 1 in² pad area
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
r(t), Normalized EffectiveTransient Thermal
Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90 °C/W
0.1
0.05
0.02
0.01
0.01
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTP2311N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733N3
Issued Date : 2007.06.13
Revised Date :2015.08.20
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTP2311N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733N3
Issued Date : 2007.06.13
Revised Date :2015.08.20
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP2311N3
CYStek Product Specification
Spec. No. : C733N3
Issued Date : 2007.06.13
Revised Date :2015.08.20
Page No. : 9/9
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
TE
2311
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032
0.0079
0.0118
0.0266
0.0335
0.0453
0.0830
0.1161
0.0098
0.0256
0.0118
0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2311N3
CYStek Product Specification