MTN4N60BI3

CYStech Electronics Corp.
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN4N60BI3
BVDSS
ID @ VGS=10V, TC=25°C
600V
RDSON(TYP) @ VGS=10V, ID=2A
4.0A
1.7Ω
Features
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
Outline
TO-251
MTN4N60BI3
G：Gate
D：Drain
S：Source
G D S
Ordering Information
Device
MTN4N60BI3-0-UA-G
Package
Shipping
TO-251
80 pcs/tube, 50 tubes/box
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTN4N60BI3
CYStek Product Specification
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 2/10
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
dv/dt
600
±30
4*
2.4*
16*
4
34.9
5
4.5
V/ns
TL
300
°C
Pd
50
0.4
-55~+150
W
W/°C
°C
Tj, Tstg
Unit
V
A
mJ
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=4mH, VG=10V, starting TJ=+25℃.
3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN4N60BI3
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 3/10
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
600
2.0
-
0.7
5
1.7
4.0
±100
1
10
2.4
V
V/°C
V
S
nA
Ω
VGS=0V, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=2A
VGS=±30V
VDS =600V, VGS =0V
VDS =480V, VGS =0V, Tj=125°C
VGS =10V, ID=2A
20.4
3
10.2
10
11.6
48
38
545
63
47
-
nC
ID=4A, VDD=480V, VGS=10V
ns
VDD=300V, ID=4A, VGS=10V,
RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
330
1.3
4
16
1.5
-
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
μA
A
V
ns
μC
IS=4A, VGS=0V
VGS=0V, IF=4A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN4N60BI3
CYStek Product Specification
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 4/10
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
3.0
10V
9V
8V
7V
6V
9
ID, Drain Current(A)
8
7
6
RDS(ON), Normalized Static Drain-Source
On-state Resistance
10
5.5 V
5
4
5V
3
2
VGS=4.5V
1
0
2.5
2.0
1.5
1.0
ID=2A,
VGS=10V
0.5
0.0
0
10
20
30
VDS, Drain-Source Voltage(V)
40
-75
50
0
25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
10
5.0
9
VGS=10V
4.0
VDS=30V
Ta=25°C
8
ID, Drain Current(A)
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
-25
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
3.0
2.0
7
6
5
VDS=10V
4
3
2
1.0
1
0
0.0
0.01
0.1
1
ID, Drain Current(A)
0
10
2
100
12
10
IF, Forward Current(A)
15
9
6
10
VGS=0V
1
Ta=150°C
Ta=25°C
0.1
0.01
ID=2A
3
4
6
8
VGS, Gate-Source Voltage(V)
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
RDS(ON), Static Drain-Source On-State
Resistance(Ω)
-50
Ta=25°C
0.001
0
0
2
4
6
VGS, Gate-Source Voltage(V)
MTN4N60BI3
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, Source Drain Voltage(V)
CYStek Product Specification
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 5/10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
Capacitance(pF)
10000
Ciss
1000
Coss
100
f=1MHz
1.2
1.0
0.8
ID=250μA,
VGS=0V
Crss
10
0.6
0
5
10
15
20
25
VDS, Drain-to-Source Voltage(V)
30
-75
-50
-25
Gate Charge Characteristics
Maximum Safe Operating Area
100
10
VDS=120V
RDS(ON)
Limited
10
VGS, Gate-Source Voltage(V)
ID, Drain Current(A)
10 μs
100μs
1ms
10ms
1
100ms
DC
TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=2.5°C/W
Single pulse
0.1
8
VDS=300V
6
VDS=480V
4
2
ID=4A
0
0.01
1
10
100
0
1000
8
12
16
20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Threshold Voltage vs Junction Tempearture
VGS(th), Normalized Threshold Voltage
4.5
4
3.5
3
2.5
2
1.5
1
VGS=10V, RθJC=2.5°C/W
0.5
4
VDS, Drain-Source Voltage(V)
5
ID, Maximum Drain Current(A)
0
25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
24
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
0
25
50
75
100
125
TC, Case Temperature(°C)
MTN4N60BI3
150
175
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 6/10
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Single Pulse Power Rating, Junction to Case
10
GFS , Forward Transfer Admittance(S)
2000
1800
TJ(MAX) =150°C
TC=25°C
RθJC=2.5°C/W
1600
Power (W)
1400
1200
1000
800
600
400
200
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
1
0.1
VDS=15V
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5 ° C/W
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
MTN4N60BI3
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 7/10
Test Circuits and Waveforms
MTN4N60BI3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 8/10
Test Circuits and Waveforms(Cont.)
MTN4N60BI3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Pb-free Assembly
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
150°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
200°C
−Time(ts min to ts max)
60-120 seconds
60-180 seconds
Time maintained above:
−Temperature (TL)
183°C
217°C
− Time (tL)
60-150 seconds
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
20-40 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN4N60BI3
CYStek Product Specification
Spec. No. : C128I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 10/10
CYStech Electronics Corp.
TO-251 Dimension
Marking:
CYS
4N60B
Product
Name
□□□□
Date
Code
1
2
3
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Millimeters
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF
0.60
0.90
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.252
0.268
0.205
0.217
0.268
0.283
0.283
0.307
0.091 REF
0.024
0.035
DIM
G
H
J
K
L
M
Millimeters
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Inches
Min.
Max.
0.020
0.028
0.087
0.094
0.018
0.022
0.018
0.024
0.035
0.059
0.213
0.228
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN4N60BI3
CYStek Product Specification