Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 1/9 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20J3 BVDSS ID@VGS=10V, TC=25°C 200V ID@VGS=10V, TA=25°C 1.9A 156mΩ 18A RDSON(TYP) @ VGS=10V, ID=9A Features • Low Gate Charge • Simple Drive Requirement • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol Outline TO-252(DPAK) MTE130N20J3 G D S G：Gate D：Drain S：Source Ordering Information Device MTE130N20J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE130N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Avalanche Current Avalanche Energy @ L=1mH, ID=3A, VDD=50V TC=25°C Power Dissipation TC=100°C TA=25°C Power Dissipation TA=70°C Operating Junction and Storage Temperature (Note 1) (Note 1) (Note 3) (Note 4) (Note 4) (Note 3) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) Symbol Limits VDS VGS 200 ±20 18 13 30 1.9 1.5 3 4.5 125 62.5 2 1.3 -55~+175 ID IDM IDSM IAS EAS PD PDSM Tj, Tstg Unit V A mJ W W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, t≤10s Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c (Note 2) (Note 4) Rth,j-a Value 1.2 62.5 90 Unit °C/W °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. MTE130N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 200 2.0 - 0.2 12 156 4.0 ±100 1 10 195 V V/°C V S nA mΩ VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=9A VGS=±20V VDS =180V, VGS =0V VDS =180V, VGS =0V, Tj=125°C VGS =10V, ID=9A 19 5 7.2 12.6 35 27.6 14.6 813 85 36 - nC VDS=160V, ID=18A, VGS=10V ns VDS=100V, ID=18A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz 0.86 80 245 18 30 1.2 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA A V ns nC IS=18A, VGS=0V IF=18A, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTE130N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 30 BVDSS, Normalized Drain-Source Breakdown Voltage 10V, 9V, 8V, 7V ID, Drain Current(A) 25 VGS=6V 20 15 10 VGS=5V 5 VGS=4.5V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1000 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VSD, Source-Drain Voltage(V) VGS=4.5V 100 VGS=6V VGS=10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 600 3 500 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=9A 400 300 200 100 2.5 VGS=10V, ID=9A 2 1.5 1 0.5 RDS(ON) @Tj=25°C :156mΩ typ 0 0 0 MTE130N20J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 GFS , Forward Transfer Admittance(S) 100 VGS, Gate-Source Voltage(V) VDS=100V 10 1 VDS=10V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=40V 6 VDS=160V 4 2 ID=18A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 Total Gate Charge---Qg(nC) 20 24 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 20 ID, Maximum Drain Current(A) 100 100μs ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON) Limit 10 1ms 10ms 100ms 1 TC=25°C, Tj=175°, VGS=10V RθJC=1.2°C/W, Single Pulse DC 16 12 8 4 VGS=10V, RθJC=1.2°C/W 0 0.1 0.1 MTE130N20J3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 3000 30 2500 20 2000 Power (W) ID, Drain Current (A) VDS=10V 25 15 1500 10 1000 5 500 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 TJ(MAX) =175°C TC=25°C θ JC=1.2°C/W 0 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.2 ° C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 MTE130N20J3 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 1.E+02 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE130N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE130N20J3 CYStek Product Specification Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name E130 N20 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE130N20J3 CYStek Product Specification