MTB110P10E3

Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 1/8
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTB110P10E3
BVDSS
-100V
ID @ VGS=-10V
-23A
80mΩ
93mΩ
RDSON(TYP) @ VGS=-10V, ID=-11A
RDSON(TYP) @ VGS=-4.5V, ID=-8A
Features
 Low Gate Charge
 Simple Drive Requirement
 Repetitive Avalanche Rated
 Fast Switching Characteristic
 RoHS compliant package
Symbol
Outline
TO-220
MTB110P10E3
G：Gate
D：Drain
S：Source
G D S
Ordering Information
Device
MTB110P10E3-0-UB-X
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB110P10E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=-10V
Continuous Drain Current @ TC=100C, VGS=-10V
Pulsed Drain Current
Continuous Drain Current @ TA=25C , VGS=10V
Continuous Drain Current @ TA=70C , VGS=10V
Avalanche Current
Avalanche Energy @ L=7.1mH, ID=-11A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
Power Dissipation
TA=70°C
Operating Junction and Storage Temperature
Symbol
Limits
VDS
VGS
-100
±20
-23
-16
-76
-3.0
-2.4
-11
430
14
140
70
2
1.3
-55~+175
ID
(Note 3)
(Note 2)
(Note 2)
(Note 3)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
IDM
IDSM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Unit
V
A
mJ
W
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
(Note 1)
Value
1.1
62
Unit
C/W
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
.
3 Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial T J=25°C.
4. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB110P10E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 3/8
Characteristics (TC=25C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
-100
-1.0
-
-0.09
19
80
93
-2.5
±100
-1
-25
110
125
V
V/°C
V
S
nA
VGS=0V, ID=-250μA
Reference to 25°C, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-10V, ID=-11A
VGS=±20V
VDS =-100V, VGS =0V
VDS =-80V, VGS =0V, Tj=125C
VGS =-10V, ID=-11A
VGS =-4.5V, ID=-8A
30.6
3.8
9.3
9.0
18.2
69.8
73.2
1726
104
71
11
-
-0.84
25.3
33.4
-23
-76
-1.3
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
μA
mΩ
nC
ID=-11A, VDS=-80V, VGS=-10V
ns
VDS=-50V, ID=-11A, VGS=-10V,
RG=5.1Ω
pF
VGS=0V, VDS=-25V, f=1MHz
Ω
f=1MHz
A
V
ns
nC
IS=-11A, VGS=0V
IF=-11A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTB110P10E3
CYStek Product Specification
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
-10V
-9V
-8V
-7V
-6V
-5V
40
30
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-ID, Drain Current(A)
50
VGS=-4V
VGS=-3.5V
20
VGS=-3V
10
VGS=-2.5V
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1.2
-VSD, Source-Drain Voltage(V)
VGS=-2V
VGS=-2.5V
100
VGS=-3V
VGS=-4.5V
VGS=-10V
10
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.01
0.1
1
10
-ID, Drain Current(A)
100
0
4
8
12
16
-IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
500
450
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-11A
400
350
300
250
200
150
100
50
2
VGS=-10V, ID=-11A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 80mΩ typ.
0
0
0
MTB110P10E3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VG S(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
Coss
100
Crss
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
100
10
1
VDS=-10V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
VDS=-20V
6
VDS=-80V
4
VDS=-50V
2
ID=-11A
0
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
5
10
15
20
25
30
Total Gate Charge---Qg(nC)
35
40
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
25
100
-ID, Maximum Drain Current(A)
1000
-ID, Drain Current(A)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
10μs
RDS(ON)
Limit
100μs
10
1ms
TC=25°C, Tj=175°C,
VGS=10V,RθJC=1.1°C/W
single pulse
1
10ms
100ms
DC
20
15
10
5
VGS=10V, RθJC=1.1°C/W
0
0.1
0.1
MTB110P10E3
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC, Case Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 6/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
5000
50
4500
VDS=-10V
Peak Transient Power (W)
45
-ID, Drain Current (A)
40
35
30
25
20
15
3500
3000
2500
2000
1500
10
1000
5
500
0
0
2
4
6
-VGS, Gate-Source Voltage(V)
8
10
TJ(MAX) =175°C
TC=25°C
θ JC=1.1°C/W
4000
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
1.Rθ JC (t)=r(t)*RθJC
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=1.1 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.E-05
MTB110P10E3
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB110P10E3
CYStek Product Specification
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 8/8
CYStech Electronics Corp.
TO-220 Dimension
Marking:
4
Device Name
B110
P10
Date Code
□□□□
1
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*: Typical
Millimeters
Min.
Max.
4.400
4.600
2.250
2.550
0.710
0.910
1.170
1.370
0.330
0.650
1.200
1.400
10.250
9.910
9.750
8.950
12.650 12.950
DIM
A
A1
b
b1
c
c1
D
E
E1
Inches
Min.
Max.
0.173
0.181
0.089
0.100
0.028
0.036
0.046
0.054
0.013
0.026
0.047
0.055
0.404
0.390
0.384
0.352
0.510
0.498
DIM
e
e1
F
H
h
L
L1
V
Φ
Millimeters
Min.
Max.
2.540*
4.980
5.180
2.650
2.950
8.100
7.900
0.000
0.300
12.900 13.400
2.850
3.250
7/500 REF
3.400
3.800
Inches
Min.
Max.
0.100*
0.196
0.204
0.104
0.116
0.319
0.311
0.000
0.012
0.508
0.528
0.112
0.128
0.295 REF
0.134
0.150
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB110P10E3
CYStek Product Specification