MTE05N10FP BVDSS

Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 1/ 8
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE05N10FP
BVDSS
ID @ VGS=10V, TC=25°C
100V
RDSON(TYP) @ VGS=10V, ID=20A
109A
5.9mΩ
RDSON(TYP) @ VGS=7V, ID=20A
6.2mΩ
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Symbol
Outline
MTE05N10FP
TO-220FP
G：Gate D：Drain S：Source
G D S
Ordering Information
Device
MTE05N10FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE05N10FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit)
Continuous Drain Current @ TC=100°C, VGS=10V(silicon limit)
Continuous Drain Current @ TC=25°C, VGS=10V(package limit)
Pulsed Drain Current
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Avalanche Current
Avalanche Energy @ L=1mH, ID=25A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
Power Dissipation
TA=70°C
Operating Junction and Storage Temperature
Symbol
Limits
VDS
VGS
100
±30
109
77
60
300
ID
(Note 1)
IDM
(Note 3)
(Note 2)
(Note 2)
(Note 3)
(Note 2)
(Note 3)
IDSM
IAS
EAS
EAR
(Note 1)
PD
(Note 1)
(Note 2)
(Note 2)
PDSM
Tj, Tstg
Unit
V
A
11
8.8
25
323
20
200
100
2
1.3
-55~+175
mJ
W
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
(Note 2)
(Note 2)
Rth,j-a
Value
0.75
15
62.5
Unit
°C/W
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
MTE05N10FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 3/ 8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
100
2.0
-
0.1
52
5.9
6.2
4.0
±100
1
25
8.3
8.6
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±30V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=55°C
VGS =10V, ID=20A
VGS =7V, ID=10A
116
27
37
37
35
90
24
5797
660
206
-
0.65
50
104
60
1
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*VSD
*trr
*Qrr
-
μA
mΩ
nC
ID=20A, VDS=50V, VGS=10V
ns
VDS=50V, ID=20A, VGS=10V, RG=3Ω
pF
VGS=0V, VDS=30V, f=1MHz
A
V
ns
nC
IS=1A, VGS=0V
VGS=0V, IF=20A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTE05N10FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 4/ 8
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
300
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V
ID, Drain Current(A)
250
VGS=6V
200
150
VGS=5V
100
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
50
VGS=4V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VGS=4.5V
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
100
VGS=6V
VGS=7V
VGS=10V
10
1
1
Tj=25°C
0.8
0.6
0.4
Tj=150°C
0.2
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.8
R DS(ON) , Normalized Static DrainSource On-State Resistance
100
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
90
ID=20A
80
70
60
50
40
30
20
10
2.4
VGS=10V, ID=20A
2
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 5.9mΩ typ.
0
0
0
MTE05N10FP
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 5/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
C oss
1000
Crss
1.4
1.2
1
ID=1mA
0.8
0.6
ID=250μA
0.4
0.2
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
75 100 125 150 175 200
Gate Charge Characteristics
100
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25 50
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=50V
ID=20A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
20
40
60
80
100
Total Gate Charge---Qg(nC)
120
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
140
RDS(ON)
Limit
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
0
10 μ s
100
100μ s
1ms
10
TC=25°C, Tj=175°C,
VGS=10V,RθJC=0.75°C/W
single pulse
1
10ms
100ms
DC
Silicon limit
120
100
80
60
40
Package limit
20
VGS=10V, RθJC=0.75°C/W
0
0.1
0.1
MTE05N10FP
1
10
100
VDS, Drain-Source Voltage(V)
1000
0
25
50
75 100 125 150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 6/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
5000
300
4500
VDS=10V
Peak Transient Power (W)
ID, Drain Current (A)
250
200
150
100
50
TJ(MAX) =175°C
TC=25°C
θ JC=0.75°C/W
4000
3500
3000
2500
2000
1500
1000
500
0
0
2
4
6
VGS, Gate-Source Voltage(V)
8
10
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
1
D=0.5
1.Rθ JC (t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=0.75 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTE05N10FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 7/ 8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE05N10FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 8/ 8
TO-220FP Dimension
Marking:
Device Name
CYS
E05N10
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Inches
Min.
Max.
0.171
0.183
0.051 REF
0.112
0.124
0.102
0.110
0.020
0.030
0.031
0.041
0.047 REF
0.020
0.030
0.396
0.404
0.583
0.598
0.100 *
0.106 REF
DIM
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
Millimeters
Min.
Max.
4.35
4.65
1.300 REF
2.85
3.15
2.60
2.80
0.50
0.75
0.80
1.05
1.20 REF
0.500
0.750
10.06
10.26
14.80
15.20
2.54*
2.70 REF
DIM
G
H
H1
H2
J
K
L
L1
L2
M
N
Inches
Min.
Max.
0.246
0.258
0.138 REF
0.055 REF
0.256
0.272
0.031 REF
0.020
1.102
1.118
0.043
0.051
0.036
0.043
0.067 REF
0.012 REF
Millimeters
Min.
Max.
6.25
6.55
3.50 REF
1.40 REF
6.50
6.90
0.80 REF
0.50 REF
28.00
28.40
1.10
1.30
0.92
1.08
1.70 REF
0.30 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE05N10FP
CYStek Product Specification