MTB1D7N03E3

CYStech Electronics Corp.
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date : 2015.05.08
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB1D7N03E3
BVDSS
30V
ID @VGS=10V
RDSON(TYP) @ VGS=10V, ID=30A
203A
2mΩ
RDSON(TYP) @ VGS=4.5V, ID=20A
2.6mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
TO-220
MTB1D7N03E3
G：Gate
D：Drain
S：Source
GDS
Ordering Information
Device
MTB1D7N03E3-0-UB-S
Package
Shipping
TO-220
50 pcs/tube, 20 tubes/box, 4 boxes / carton
(Pb-free lead plating package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB1D7N03E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date : 2015.05.08
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V (silicon limit)
Continuous Drain Current @ TC=100°C, VGS=10V (silicon limit)
Continuous Drain Current @ TC=25°C, VGS=10V(package limit)
VDS
VGS
30
±20
203
144
Pulsed Drain Current
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Avalanche Current
Avalanche Energy @ L=100μH, ID=80A, RG=25Ω
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
Power Dissipation
TA=70°C
Operating Junction and Storage Temperature
(Note 1)
(Note 3)
(Note 2)
(Note 2)
(Note 3)
(Note 2)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
ID
Unit
V
120
IDM
IDSM
IAS
EAS
PD
PDSM
Tj, Tstg
600
20
16
80
320
214
107
2
1.3
-55~+175
A
mJ
W
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
(Note 1)
(Note 1)
Rth,j-a
Value
0.7
15
62.5
Unit
°C/W
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The maximum current limited by package is 120A.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB1D7N03E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date : 2015.05.08
Page No. : 3/8
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
30
1.3
-
1.9
52
2
2.6
2.5
±100
1
5
2.6
3.8
41
14
17
30
21
142
84
5385
935
854
1.6
4
0.79
203
600
1.2
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
-
Unit
V
S
nA
μA
mΩ
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±20V
VDS =24V, VGS =0V
VDS =24V, VGS =0V, Tj=55°C
VGS =10V, ID=30A
VGS =4.5V, ID=20A
nC
ID=15A, VDS=15V, VGS=4.5V
ns
VDS=15V, ID=1A, VGS=10V, RG=3.3Ω
pF
VGS=0V, VDS=15V, f=1MHz
Ω
VDS=0V, VGS=0V, f=1MHz
A
V
IS=20A, VGS=0V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB1D7N03E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date : 2015.05.08
Page No. : 4/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
400
350
1.2
4.5V
250
10V, 6V, 5V
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current(A)
300
VGS=4V
200
1
0.8
150
VGS=3.5V
100
50
0.6
VGS=3V
ID=250μA,
VGS=0V
0.4
0
0
1
2
3
4
VDS , Drain-Source Voltage(V)
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1000
100
VGS=4.5V
10
VGS=7V
VGS=10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
100
0
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
100
90
VGS=10V, ID=20A
ID=20A
80
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
4
70
60
50
40
30
20
10
0
0
MTB1D7N03E3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
2
1.6
1.2
0.8
RDS(ON) @Tj=25°C :2mΩ typ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date : 2015.05.08
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
C oss
1000
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
100
0.1
1
10
VDS , Drain-Source Voltage(V)
-75 -50 -25
100
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
100
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=15V
ID=15A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
10
20
30 40 50 60 70 80
Total Gate Charge---Qg(nC)
90 100
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
250
1000
ID, Maximum Drain Current(A)
ID, Drain Current(A)
100μs
RDS(ON)
Limit
100
1ms
10ms
100ms
10
DC
1
TC=25°C, Tj=175°, VGS=10V
RθJC=0.7°C/W, Single Pulse
200
silicon imit
150
100
package limit
50
VGS=10V, RθJC=0.7°C/W
0
0.1
0.1
MTB1D7N03E3
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100 125 150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date : 2015.05.08
Page No. : 6/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
3000
400
VDS=5V
TJ(MAX) =175°C
TC=25°C
θ JC=0.7°C/W
2500
300
2000
250
Power (W)
ID, Drain Current (A)
350
200
150
1500
1000
100
500
50
0
0
2
4
6
8
VGS , Gate-Source Voltage(V)
10
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=0.7 °C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
MTB1D7N03E3
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date : 2015.05.08
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB1D7N03E3
CYStek Product Specification
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date : 2015.05.08
Page No. : 8/8
CYStech Electronics Corp.
TO-220 Dimension
Marking:
4
Device Name
Date Code
B1D7
N03
□□□□
1
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*: Typical
Millimeters
Min.
Max.
4.400
4.600
2.250
2.550
0.710
0.910
1.170
1.370
0.330
0.650
1.200
1.400
10.250
9.910
9.750
8.950
12.650 12.950
DIM
A
A1
b
b1
c
c1
D
E
E1
Inches
Min.
Max.
0.173
0.181
0.089
0.100
0.028
0.036
0.046
0.054
0.013
0.026
0.047
0.055
0.404
0.390
0.384
0.352
0.510
0.498
DIM
e
e1
F
H
h
L
L1
V
Φ
Millimeters
Min.
Max.
2.540*
4.980
5.180
2.650
2.950
8.100
7.900
0.000
0.300
12.900 13.400
2.850
3.250
7/500 REF
3.400
3.800
Inches
Min.
Max.
0.100*
0.196
0.204
0.104
0.116
0.319
0.311
0.000
0.012
0.508
0.528
0.112
0.128
0.295 REF
0.134
0.150
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB1D7N03E3
CYStek Product Specification