QJP-65

CYStech Electronics Corp.
Spec. No. : C179SH
Issued Date : 2015.09.09
Revised Date :
Page No. : 1/6
1A Snubber Damping Rectifier
QJP-65
Features
 High current capability
 Smoothly soft reverse recovery time (trr)
 Low profile surface mounted package in order to minimize board space
 Pb-free lead plating and halogen-free package
Mechanical data
Case : Molded plastic, JEDEC SOD-123.
Epoxy : UL94-V0 rated flame retardant
Terminals : Plated terminals, solderable per MIL-STD-202 method 208
Polarity : Indicated by cathode band
Mounting position : Any
Weight : approx. 0.009 gram
Symbol
Outline
QJP-65
2 (Anode)
SOD-123
Ordering Information
Device
QJP-65-T1-G
Package
SOD-123
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
QJP-65
CYStek Product Specification
Spec. No. : C179SH
Issued Date : 2015.09.09
Revised Date :
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (TA=25℃, unless otherwise noted)
Parameters
Repetitive peak reverse voltage
RMS voltage
Continuous reverse voltage
Conditions
Single phase half wave,
60Hz @TJ=25°C
Single phase half wave,
60Hz @TJ=25°C
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
IF=0.5A, IR=1.0A,
IRR=0.25A
Forward rectified current
Repetitive Peak Forward Current
Forward surge current
Maximum reverse recovery time
Storage temperature range
Operating junction temperature range
Symbol
Value
Units
VRRM
650
V
VRMS
455
V
VR
650
V
IF(AV)
1
A
IFRM
1.57
A
IFSM
9
A
trr
300
ns
Tstg
-55~+150
C
Tj
-55~+150
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
(Note )
Value
50
215
Unit
C/W
Note: When mounted on FR-4 PCB with area measuring 10×10 mm
Characteristics (TA=25C, unless otherwise noted)
Characteristic
Symbol
VR
Forward Voltage
Reverse Leakage Current
Junction Capacitance
QJP-65
VF 1
VF 2
IR
IR
CJ
Condition
IR=100μA
IF=100mA
IF=500mA
VR=580V
VR=580V, TA=125C
VR=1V, f=1MHz
Min.
Typ
Max.
Unit
650
-
-
V
-
11.6
0.95
1.2
100
10
-
V
nA
μA
pF
CYStek Product Specification
Spec. No. : C179SH
Issued Date : 2015.09.09
Revised Date :
Page No. : 3/6
CYStech Electronics Corp.
Typical Characteristics
Power Derating Curve
Forward Current vs Forward Voltage
0.7
Instantaneous Forward Current---IF(mA)
10000
Power Dissipation(W)
0.6
0.5
0.4
0.3
0.2
0.1
125℃
100
25°C
75°C
10
Pulse width=300μs,
1% Duty cycle
1
0
0
Ambient Temperature---TA(℃)
0.8
1.2
1.6
2
Forward Voltage---VF(V)
Reverse Leakage Current vs Reverse Voltage
Junction Capacitance vs Reverse Voltage
25
50
75
100
125
150
175
0
200
0.4
2.4
2.8
100
10000
Tj=125℃
1000
100
Junction Capacitance---C J(pF)
Reverse Leakage Current---I R(nA)
1000
Tj=75℃
10
Tj=25℃
1
0.1
10
Tj=25℃, f=1.0MHz
1
0.01
0
100
200
300
400
500
600
700
Reverse Voltage---VR(V)
0.1
1
10
100
Reverse Voltage---VR (V)
Recommended Soldering Footprint
QJP-65
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C179SH
Issued Date : 2015.09.09
Revised Date :
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
QJP-65
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C179SH
Issued Date : 2015.09.09
Revised Date :
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
QJP-65
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C179SH
Issued Date : 2015.09.09
Revised Date :
Page No. : 6/6
SOD-123 Dimension
Marking:
QJP
2-Lead SOD-123 Plastic
Surface Mounted Package
CYStek Package Code: SH
Inches
Min.
Max.
0.102
0.110
0.059
0.067
0.041
0.049
DIM
A
B
C
Millimeters
Min.
Max.
2.600
2.800
1.500
1.700
1.050
1.250
Style: Pin 1.Cathode 2.Anode
DIM
D
E
Inches
Min.
Max.
0.018
0.026
0.140
0.152
Millimeters
Min.
Max.
0.450
0.650
3.550
3.850
Notes: 1.Controlling dimension : millimeters.
2.Lead thickness specified per L/F drawing with solder plating.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
QJP-65
CYStek Product Specification