CYStech Electronics Corp. Spec. No. : C291S2 Issued Date : 2008.12.15 Revised Date : 2013.11.28 Page No. : 1/6 0.5A surface mount Schottky diode RB0540S2 Features • High current capability, low forward voltage drop • High surge current capability • Guardring for over voltage protection • Low power loss, high efficiency • Ultra high-speed switching • Low profile surface mounted package in order to minimize board space Mechanical data •Case : Molded plastic, SC-76/SOD323 •Epoxy : UL94-V0 rated flame retardant •Terminals : Plated terminals, solderable per MIL-STD-750 method 2026 •Polarity : Indicated by cathode band •Mounting position : Any •Weight : approx. 0.0045 gram Symbol Outline RB0540S2 2 (Anode) SOD-323 Ordering Information Device RB0540S2-0-T1-G Package SOD-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name RB0540S2 CYStek Product Specification Spec. No. : C291S2 Issued Date : 2008.12.15 Revised Date : 2013.11.28 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings (TA=25℃, unless otherwise noted) Parameters Repetitive peak reverse voltage RMS voltage Continuous reverse voltage Conditions Max Units VRRM 40 V VRMS 28 V VR 40 V IO 0.5 Single phase half wave, 60Hz @TJ=25°C IF(AV) 1 Forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 15 Thermal resistance Junction to Ambient RθJA Forward rectified current Symbol Min Storage temperature range Operating junction temperature range Typ A A °C/W 90 Tstg -65 175 °C Tj -55 125 °C Characteristics (TA=25°C) Characteristic Symbol VR Forward Voltage Reverse Leakage Current Capacitance Between Terminals RB0540S2 VF 1 VF 2 IR 1 IR 2 IR 3 CT Condition IR=600μA IF=100mA IF=500mA VR=20V VR=40V VR=40V, TA=75°C VR=4V, f=1MHz Min. Typ Max. Unit 40 - - V - 18.3 370 500 100 500 10 - mV μA μA mA pF CYStek Product Specification Spec. No. : C291S2 Issued Date : 2008.12.15 Revised Date : 2013.11.28 Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Maximum Non-Repetitive Forward Surge Current Forward Current Derating Curve 15 Peak Forward Surge Current---IFSM (A) Average Forward Current---Io(A) 0.6 0.5 0.4 0.3 0.2 resistive or inductive load 0.1 Tj=25℃, 8.3ms Single Half Sine Wave, JEDEC method 12 9 6 3 0 0 0 25 50 75 100 125 150 1 175 Ambient Temperature---TA(℃) 100 Number of Cycles at 60Hz Forward Current vs Forward Voltage Junction Capacitance vs Reverse Voltage 1000 100 Tj=125℃ Junction Capacitance---C J (pF) Instantaneous Forward Current---IF(mA) 10 100 Tj=75℃ Tj=25℃ 10 Pulse width=300μs, 1% Duty cycle Tj=25℃, f=1.0MHz 10 1 0 0.2 0.4 Forward Voltage---VF(V) 0.6 0.1 1 10 Reverse Voltage---VR(V) Reverse Leakage Current vs Reverse Voltage Reverse Leakage Current---I R(μA) 10000 1000 Tj=75℃ 100 Tj=25℃ 10 0 RB0540S2 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage---(%) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C291S2 Issued Date : 2008.12.15 Revised Date : 2013.11.28 Page No. : 4/6 Reel Dimension Carrier Tape Dimension RB0540S2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C291S2 Issued Date : 2008.12.15 Revised Date : 2013.11.28 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. RB0540S2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C291S2 Issued Date : 2008.12.15 Revised Date : 2013.11.28 Page No. : 6/6 SOD-323 Dimension Marking: K A 5C H 2 1 Style: Pin 1.Cathode 2.Anode B D 2-Lead SOD-323 Plastic Surface Mounted Package, CYStek Package Code: S2 J H E C *: Typical Inches Min. Max. 0.0630 0.0709 0.0453 0.0531 0.0315 0.0394 0.0098 0.0157 DIM A B C D Millimeters Min. Max. 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 DIM E H J K Inches Min. Max. 0.0060 REF 0.0000 0.0040 0.0035 0.0070 0.0906 0.1063 Millimeters Min. Max. 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 Notes: 1.Controlling dimension : millimeters. 2.Lead thickness specified per L/F drawing with solder plating. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. RB0540S2 CYStek Product Specification