RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). zApplications Switching Abbreviated symbol : XD zInner circuit zPackaging specifications Package Type (6) Taping (5) (4) TR Code Basic ordering unit (pieces) 3000 ∗2 RUL035N02 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 20 ±10 ±3.5 ±7 0.8 7 1.0 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth(ch-a) ∗ Limits 125 Unit °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Rev.A 1/4 RUL035N02 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 20 − 0.3 − − − − 3.2 − − − − − − − − − − Typ. Max. − − − − 31 38 50 66 − 460 110 60 10 20 40 50 5.7 1.1 0.9 ±10 − 1 1.0 43 53 70 93 − − − − − − − − − − − Conditions Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 3.5A, VGS= 4.5V ID= 3.5A, VGS= 2.5V ID= 1.8A, VGS= 1.8V ID= 0.7A, VGS= 1.5V VDS= 10V, ID= 3.5A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 1.8A VGS= 4.5V RL 5.6Ω RG=10Ω VDD 10V, ID= 3.5A VGS= 4.5V RL=2.9Ω, RG=10Ω Unit V IS= 0.8A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. VSD − − 1.2 Conditions Rev.A 2/4 RUL035N02 Transistors zElectrical characteristics curves 1000 1000 Ciss Coss Crss 0.1 1 td(off) 10 tr 1 0.01 100 10 td(on) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) DRAIN CURRENT : ID (A) Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 80 ID=1.8A 20 0 1 0 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) 4 5 6 7 8 10 1000 100 10 0.01 9 10 5 7 6 8 0.1 0.01 0.0 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 0.5 1.5 1.0 Fig.6 Source-Current vs. Source-Drain Voltage Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1 VGS=0V Pulsed SOURCE-DRAIN VOLTAGE : VSD (A) VGS=2.5V Pulsed 0.1 4 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1 Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 1 3 3 10 GATE-SOURCE VOLTAGE : VGS (V) VGS=4.5V Pulsed 0.1 2 2 Fig.3 Dynamic Input Characteristics 40 1.6 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 0.01 1 TOTAL GATE CHANGE : Qg (nC) 60 Fig.4 Typical Transfer Characteristics 100 1 0 Ta=25°C Pulsed ID=3.5A GATE-SOURCE VOLTAGE : VGS (V) 1000 2 10 100 VDS=10V Pulsed 0.001 0.2 1 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 1 3 DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 10 Ta=25°C VDD=10V 5 ID=3.5A RG=10Ω Pulsed 4 0 0.1 SOURCE CURRENT : IS (A) 10 0.01 tf 100 10 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 6 Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=4.5V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 VGS=1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Rev.A 3/4 RUL035N02 Transistors 1000 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 10 0.01 1 0.1 10 100 10 Ta=25°C Pulsed FORWARD TRANSFER ADMITTANCE : Yfs (S) VGS=1.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V 10 0.01 0.1 1 VDS=10V Pulsed Ta=−25°C Ta=25°C Ta=75°C Ta=125°C 1 0.1 0.01 10 1 0.1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current (Ι ) Fig.11 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.12 Forward Transfer Admittance vs. Drain Current zMeasurement circuit Pulse Width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. 10% RG VDD 90% td(on) 90% td(off) tr ton tf toff Fig.14 Switching Waveforms Fig.13 Switching Time Measurement Circuit VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveform Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0