ROHM RUL035N02

RUL035N02
Transistors
1.5V Drive Nch MOSFET
RUL035N02
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
TUMT6
0.2Max.
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT6).
3) Low voltage drive (1.5V drive).
zApplications
Switching
Abbreviated symbol : XD
zInner circuit
zPackaging specifications
Package
Type
(6)
Taping
(5)
(4)
TR
Code
Basic ordering unit (pieces)
3000
∗2
RUL035N02
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
20
±10
±3.5
±7
0.8
7
1.0
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth(ch-a) ∗
Limits
125
Unit
°C/W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Rev.A
1/4
RUL035N02
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
20
−
0.3
−
−
−
−
3.2
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
31
38
50
66
−
460
110
60
10
20
40
50
5.7
1.1
0.9
±10
−
1
1.0
43
53
70
93
−
−
−
−
−
−
−
−
−
−
−
Conditions
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS=±10V, VDS=0V
ID= 1mA, VGS=0V
VDS= 20V, VGS=0V
VDS= 10V, ID= 1mA
ID= 3.5A, VGS= 4.5V
ID= 3.5A, VGS= 2.5V
ID= 1.8A, VGS= 1.8V
ID= 0.7A, VGS= 1.5V
VDS= 10V, ID= 3.5A
VDS= 10V
VGS=0V
f=1MHz
VDD 10V
ID= 1.8A
VGS= 4.5V
RL 5.6Ω
RG=10Ω
VDD 10V, ID= 3.5A
VGS= 4.5V
RL=2.9Ω, RG=10Ω
Unit
V
IS= 0.8A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
VSD
−
−
1.2
Conditions
Rev.A
2/4
RUL035N02
Transistors
zElectrical characteristics curves
1000
1000
Ciss
Coss
Crss
0.1
1
td(off)
10
tr
1
0.01
100
10
td(on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)
DRAIN CURRENT : ID (A)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
80
ID=1.8A
20
0
1
0
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
4
5
6
7
8
10
1000
100
10
0.01
9
10
5
7
6
8
0.1
0.01
0.0
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
0.5
1.5
1.0
Fig.6 Source-Current vs.
Source-Drain Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
VGS=0V
Pulsed
SOURCE-DRAIN VOLTAGE : VSD (A)
VGS=2.5V
Pulsed
0.1
4
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
1
3
3
10
GATE-SOURCE VOLTAGE : VGS (V)
VGS=4.5V
Pulsed
0.1
2
2
Fig.3 Dynamic Input Characteristics
40
1.6
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
10
0.01
1
TOTAL GATE CHANGE : Qg (nC)
60
Fig.4 Typical Transfer Characteristics
100
1
0
Ta=25°C
Pulsed
ID=3.5A
GATE-SOURCE VOLTAGE : VGS (V)
1000
2
10
100
VDS=10V
Pulsed
0.001
0.2
1
Fig.2 Switching Characteristics
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1
3
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
10
Ta=25°C
VDD=10V
5 ID=3.5A
RG=10Ω
Pulsed
4
0
0.1
SOURCE CURRENT : IS (A)
10
0.01
tf
100
10
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
100
6
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25°C
f=1MHz
VGS=4.5V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10000
VGS=1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.A
3/4
RUL035N02
Transistors
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
1
0.1
10
100
10
Ta=25°C
Pulsed
FORWARD TRANSFER ADMITTANCE
: Yfs (S)
VGS=1.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1000
VGS=1.5V
VGS=1.8V
VGS=2.5V
VGS=4.5V
10
0.01
0.1
1
VDS=10V
Pulsed
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0.1
0.01
10
1
0.1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι )
Fig.11 Static Drain-Source
On-State Resistance
vs. Drain Current ( )
Fig.12 Forward Transfer Admittance
vs. Drain Current
zMeasurement circuit
Pulse Width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
10%
RG
VDD
90%
td(on)
90%
td(off)
tr
ton
tf
toff
Fig.14 Switching Waveforms
Fig.13 Switching Time Measurement Circuit
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveform
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
www.rohm.com
Copyright © 2008 ROHM CO.,LTD.
THE AMERICAS / EUROPE / ASIA / JAPAN
Contact us : [email protected] rohm.co. jp
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Appendix1-Rev2.0