EN29PL064 VS S29JL064H Specification Comparison

Eon Silicon Solution Inc.
Page
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EN29PL064 V.S. S29JL064H
Specification Comparison
64Mbit (8 x 16-Bit) CMOS 3.0 Volt- only,
Simultaneous-Read/Write Flash Memory
Part No. :
EN29PL064
Issued date :
2008 / 08 / 20
Prepared by :
FAE EngineerBrian Hsieh
Approval by :
FAE ManagerJason Tseng
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2008/ 08/ 20
Eon Silicon Solution Inc.
Page
2/4
1. Part No.
Eon
:
Spansion :
EN29PL064
S29JL064H
2. Basic Features:
The following features are identical with each other.
JEDEC standard compatible pin-out and command sets.
2.7 – 3.6 Voltage Simultaneous Read/Write Operation.
CFI (Common Flash Interface) compliant
Erase Suspend / Resume
Unlock Bypass Program
WP# / ACC (Write Protect/Acceleration)
High Voltage Sector Protection and Temporary Sector Unprotect
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2008/ 08/ 20
Eon Silicon Solution Inc.
Page
3/4
3. Autoselect Codes table Comparison:
EON:
Amax
Description
Device ID
Manufacturer ID:
Eon
CE# OE# WE#
L
Read Cycle 1
L
Read Cycle 2
L
Read Cycle 3
L
Sector Protection
Verification
Secured Silicon
Indicator Bit
(DQ7, DQ6)
L
L
L
L
L
L
H
H
H
H
A5
to
A12
A10 A9
BA
X
BA
X
SA
X
BA (See Note)
X
V ID
VI D
VI D
VI D
to
A8 A7 A6 A4 A3 A2 A1 A0
H1
L
X
X
X
L
L
L
X
L
X
L
L
L
L
L
X
DQ15
to DQ0
001Ch
L
L
L
L
L
L
L
H 227Eh
H
H
H
L
2202h (PL064)
220Ah (PL032)
H
H
H
H
2201h (PL064)
2201h (PL032)
L
L
H
L
0001h (protected),
0000h (unprotected)
L
L
H
H
007Fh
DQ6=1
(customer locked)
Note: L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don’t care.
Spansion :
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2008/ 08/ 20
Eon Silicon Solution Inc.
Page
4/4
4. Difference Comparison Table:
S29JL064H
VID
Pin to Pin
Byte mode
Page read
Secure sector
FlexBank
Architecture
EN29PL064
11.5 to 12.5
Yes for Word mode
Yes (PIN47: Byte/word mode select)
No
256 bytes
8.5 - 9.5
Yes
No (PIN47:NC)
4-words
64 words
4 Banks: 8M, 24M, 24M, 8M
4 Banks: 8M, 24M, 24M, 8M
Boot Sectors
4 Kword x 8 and 32 Kword x 15
4 Kword x 8 and 32 Kword x 15
CFI
Program
Suspend/Resume
Multi sector erase
Write Buffer
Programming
Yes. Spansion's CFI table
Yes. EoN's CFI table
No
Yes
Yes
No
No
32-word Write Buffer
PPB Lock Bit
No
48-pin TSOP
63 ball FBGA
Yes
Available package
boot sectors at the top and bottom
boot sectors at the top and bottom
48-pin TSOP
5. Conclusion
It is no problem to replace S29JL064H by EN29PL064, if customer uses S29JL064H
in Word mode. There is only one matter needing attention is Multi erase function.
The customer must issue another sector erase command for the next sector to be
erased after the previous one is completed for EN29PL064.
The Page mode and 32 word programming write buffer will enhance flash
performance. So EN29PL064 device is a good choice to fully replace S29JL064H.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution Inc. www.essi.com.tw
Rev. A, Issue Date: 2008/ 08/ 20