Eon Silicon Solution Inc. Page 1/4 Specification Comparison 64Mbit (4 x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory EN29PL064 VS S29PL064J Part No. : EN29PL064 Issued date : 2008 / 01 / 22 Prepared by : FAE Engineer：Sunny Tai Approval by : FAE Manager：Jason Tseng This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 01/ 22 Eon Silicon Solution Inc. Page 2/4 1. Part No. Eon : Spansion : EN29PL064 S29PL064J 2. Basic Features: The following features are identical with each other. z 2.7 – 3.6 Simultaneous Read/Write Voltage. z Boot Sectors and FlexBank Architecture z z CFI (Common Flash Interface) compliant Erase and Program Suspend / Resume z Unlock Bypass Program z WP# / ACC (Write Protect/Acceleration) z z Persistent Protection Bit (PPB) and PPB Lock Bit High Voltage Sector Protection and Temporary Sector Unprotect z JEDEC standard compatible pin-out and command sets 3. Difference and Comparison Table : z Page read size z Multi sector Erase z ACCelerated Sector Erase z z Write Buffer Programming Dynamic Protection Bit (DYB) z Manufacture ID z Password Sector Protection This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 01/ 22 Eon Silicon Solution Inc. Page 3/4 Comparison table: S29PL064J EN29PL064 64 Megabit (4 M x 16-Bit), 3 Volt Simultaneous Read/Write 2.7V to 3.6V Vcc 11.5 to 12.5 8.5 - 9.5 VID 8.5 - 9.5 VHH 0.11um 0.13um Process Read while Write SO 8-word 4-word Page read 64 words factory + 64 words user 64 words user Secure Si 4 Kword x 16 boot sectors, 8 at the top and 8 at the bottom Boot Sectors FlexBank 4 Banks: 8M, 24M, 24M, 8M 32Kword regular sector Architecture 20 yrs typical Data retention 1,000,000 100,000 Cycling Endurnce Yes, VIO = Vcc No VIO 20ns Page access time 70ns 70ns Random access time Yes. Spansion's CFI table Yes. EoN's CFI table CFI Erase/Program Yes Suspend/Resume Unlock Bypass Yes Program Yes No Multi sector erase @ VIL: WP# protect four outermost sectors @ VIH: Normal operation WP#/ACC @ VHH: accelerated programming ACCelerated Sector Erase Write Buffer Programming Word Pgm time Acc. Word Pgm time Sector Erase time Chip Erase time No Yes, about 40mS faster per sector No 32-word Write Buffer 6us (typ.) 4us (typ.) 0.5s (typ.) 71s (typ.) 6us (typ.) 4us (typ.) 0.5s (typ.) 71s (typ.) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 01/ 22 Eon Silicon Solution Inc. S29PL064J Page 4/4 EN29PL064 64 Megabit (4 M x 16-Bit), 3 Volt Simultaneous Read/Write Yes. 1 per sector for sector 0 to 10 and 131 to 141, 1 per 4 sectors for the rest PPB Lock Bit Dynamic Protctn Bit (DYB) Password Sector Protection High Voltage Sector Protection Temporary Sector Unprotect Yes Autoselect Persistent Protection Bit (PPB) Yes (1 per sectors) No user-defined 64-bit password No Yes Yes A9 HV Autoselect Yes Yes MID (addr 000h) MID (addr 100h) DID (addr 01h) DID (addr 0Eh) DID (addr 0Fh) 0001 007F 001C Addr 03h 227E 2202 2201 2202 2201 DQ7=1: Factory locked DQ6=1: Factory & Customer locked DQ7=1 DQ6=1: Customer locked Tacc 200ns PPB CAM status wait state 4. Conclusion To replace EN29PL064 with S29PL064J, most function and package are compatible. Only need to take care the following (1). The Manufacture ID EN29PL064: 007F ( A8 = L ) or 001CH (A8 = H ) S29PL064J: 0001H (2). Page read size EN29PL064: 4 Words page S29PL064J: 8 Words page (3). Multi sector Erase EN29PL064: No S29PL064J: Yes This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 01/ 22