H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 2 4 4 1 1 RENESAS Package code: PRSS0004AE-C (Package name LDPAK(S)-(2)) 2 1 3 H5N2501LS 3 2 3 H5N2501LM H5N2501LD D 1. Gate 2. Drain 3. Source 4. Drain G S Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.2.00, Jul.21.2005, page 1 of 4 Symbol VDSS VGSS ID ID (pulse)Note1 IDR Note3 IAP Pch Note2 Tch Tstg Ratings 250 ±30 18 72 Unit V V A A 18 18 75 150 –55 to +150 A A W °C °C H5N2501LD, H5N2501LS, H5N2501LM Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance RDS(on) Min 250 — — 3.0 8 — Typ — — — — 14 0.14 Max — 1 ±0.1 4.5 — 0.18 Unit V µA µA V S Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 1350 170 50 30 65 95 18 45 8 22 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC Body-Drain diode forward voltage Body-Drain diode reverse recovery time VDF trr — — 0.9 160 1.4 — V ns Body-Drain diode reverse recovery charge Notes: 4. Pulse test Qrr — 1.0 — µC Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Rev.2.00, Jul.21.2005, page 2 of 4 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 9 A, VDS = 10 V Note4 ID = 9 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 9 A VGS = 10 V RL = 13.9 Ω Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 18 A IF = 18 A, VGS = 0 Note4 IF = 18 A, VGS = 0 diF/dt = 100 A/µs H5N2501LD, H5N2501LS, H5N2501LM Package Dimensions • H5N2501LD JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g (1.4) 4.44 ± 0.2 10.2 ± 0.3 8.6 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 2.49 ± 0.2 11.0 ± 0.5 11.3 ± 0.5 0.3 10.0 +– 0.5 Unit: mm 0.4 ± 0.1 • H5N2501LS SC-83 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.2.00, Jul.21.2005, page 3 of 4 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 1.7 JEITA Package Code 2.2 H5N2501LD, H5N2501LS, H5N2501LM • H5N2501LM RENESAS Code Package Name PRSS0004AE-C LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] Unit: mm 1.35g (1.4) 4.44 ± 0.2 7.8 6.6 (2.3) 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 + 0.3 – 0.5 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 1.7 JEITA Package Code 2.2 1.37 ± 0.2 0.2 0.86 +– 0.1 2.54 ± 0.5 2.54 ± 0.5 0.4 ± 0.1 0.3 5.0 +– 0.5 1.3 ± 0.2 Ordering Information Part Name H5N2501LSTL-E Quantity 1000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Jul.21.2005, page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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