MPQ3904 w w w. c e n t r a l s e m i . c o m SILICON NPN QUAD TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3904 type is comprised of four independent silicon NPN transistors mounted in a 14-pin DIP, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC 60 UNITS V 40 V 6.0 V 200 mA PD PD 500 mW 2.0 W TJ, Tstg -65 to +150 °C ELECTRICAL SYMBOL ICBO IEBO CHARACTERISTICS PER TRANSISTOR: (TA=25°C) TEST CONDITIONS MIN TYP VCB=40V VEB=4.0V BVCBO IC=10μA 60 BVCEO IC=1.0mA 40 V BVEBO IE=10μA 6.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.20 V VBE(SAT) IC=10mA, IB=1.0mA VCE=1.0V, IC=0.1mA 0.85 V hFE hFE hFE fT Cob Cib MAX 50 UNITS nA 50 nA V 30 VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA 50 VCE=20V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=140kHz 250 75 MHz 4.0 pF 8.0 pF ton VEB=0.5V, IC=0, f=140kHz VBE=0.5V, IC=10mA, IB1=1.0mA 37 ns toff IC=10mA, IB1=IB2=1.0mA 136 ns R1 (24-April 2013) MPQ3904 SILICON NPN QUAD TRANSISTOR TO-116 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector Q1 2) Base Q1 3) Emitter Q1 4) No Connection 5) Emitter Q2 6) Base Q2 7) Collector Q2 8) Collector Q3 9) Base Q3 10) Emitter Q3 11) No Connection 12) Emitter Q4 13) Base Q4 14) Collector Q4 MARKING: FULL PART NUMBER R1 (24-April 2013) w w w. c e n t r a l s e m i . c o m