2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hfe fT Cob Cib NF ton toff SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CHARACTERISTICS: (TA=25°C) TEST CONDITIONS VCE=30V, VEB=3.0V IC=10μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA VCE=10V, IC=1.0mA, f=1.0kHz VCE=20V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz VCE=5.0V, IC=100μA, RS=1.0kΩ f=10Hz to 15.7kHz VCC=3.0V, VBE(OFF)=0.5V, IC=10mA IB1=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 2N3905 MIN MAX 50 40 40 5.0 0.25 0.4 0.65 0.85 0.95 30 40 50 150 30 15 50 200 200 4.5 10 40 40 5.0 200 625 -65 to +150 UNITS V V V mA mW °C 200 °C/W 2N3906 MIN MAX 50 40 40 5.0 0.25 0.4 0.65 0.85 0.95 60 80 100 300 60 30 100 400 250 4.5 10 UNITS nA V V V V V V V MHz pF pF - 5.0 - 4.0 dB - 70 260 - 70 300 ns ns R2 (17-October 2011) 2N3905 2N3906 PNP SILICON TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (17-October 2011) w w w. c e n t r a l s e m i . c o m