1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. MAXIMUM RATINGS: (TA=25°C) UNITS SYMBOL Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Forward Steady-State Current Recurrent Peak Forward Current Peak Forward Surge Current (1.0s pulse) Peak Forward Surge Current (1.0µs pulse) Power Dissipation VRRM VRWM IO IF if IFSM IFSM PD 150 125 150 225 600 500 4.0 500 V V mA mA mA mA A mW Operating and Storage Junction Temperature TJ,Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IR IR IR IR BVR VF VF VF VF VF VF CT VR=125V VR=125V, TA=125°C VR=125V, TA=150°C VR=30V, TA=125°C IR=100µA IF=1.0mA IF=5.0mA IF=10mA IF=50mA IF=100mA IF=200mA VR=0, f=1.0MHz trr VR=3.5V, If=10mA, RL=1.0kΩ MIN MAX 1.0 500 3.0 300 150 0.54 0.62 0.65 0.75 0.79 0.83 (SEE REVERSE SIDE) UNITS 0.69 0.77 0.80 0.88 0.92 1.0 8.0 nA nA µA nA V V V V V V V pF 3.0 µs R1 1N3595 Low Leakage Diode JEDEC DO-35 CASE - MECHCANICAL OUTLINE A SYMBOL A B C D D DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.018 0.022 0.46 0.56 0.120 0.200 3.05 5.08 0.060 0.090 1.52 2.29 1.000 25.40 DO-35 (REV: R0) B C D R1 Marking Code: C1N3595 R1