2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 40 20 V Emitter-Base Voltage 2.0 V Continuous Collector Current VEBO IC UNITS V 400 mA IB PD 400 mA 1.0 W PD TJ, Tstg 3.5 W -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV 100 μA 5.0 mA ICEO VCE=40V, VBE=1.5V VCE=12V, VBE=1.5V, TC=150°C VCE=12V 20 μA IEBO VEB=2.0V 100 μA BVCER IC=5.0mA, RBE=10Ω IC=5.0mA Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature ICEV BVCEO VCE(SAT) hFE 40 V 20 V hFE IC=100mA, IB=20mA VCE=5.0V, IC=100mA VCE=5.0V, IC=360mA 0.5 fT Cob VCE=15V, IC=50mA, f=200MHz VCB=12V, IE=0, f=1.0MHz 500 Gpe 10 η VCC=12V, Pin=100mW, f=175MHz VCC=12V, Pout=1.0W, f=175MHz Pin VCC=12V, Pout=1.0W, f=175MHz 10 V 200 5.0 MHz 4.0 pF dB 50 % 100 mW R1 (4-June 2013) 2N4427 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (4-June 2013) w w w. c e n t r a l s e m i . c o m 2N4427 SILICON NPN RF TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS R1 (4-June 2013) w w w. c e n t r a l s e m i . c o m