2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N3583 250 175 6.0 1.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3583 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=225V, VEB=1.5V 1.0 ICEV VCE=340V, VEB=1.5V ICEV VCE=450V, VEB=1.5V ICEV VCE=225V, VEB=1.5V, TC=150°C 3.0 ICEV VCE=300V, VEB=1.5V, TC=150°C ICEO VCE=150V 10 IEBO VBE=6.0V 5.0 BVCEO IC=200mA 175 VCE(SAT) IC=1.0A, IB=125mA 5.0 VBE(SAT) IC=1.0A, IB=100mA VBE(ON) VCE=10V, IC=1.0A 1.4 hFE VCE=10V, IC=100mA 40 hFE VCE=10V, IC=500mA 40 200 hFE VCE=2.0V, IC=1.0A hFE VCE=10V, IC=1.0A 10 fT VCE=10V, IC=200mA, f=5.0MHz 10 Cob VCB=10V, IE=0, f=1.0MHz 120 hfe VCE=30V, IC=100mA, f=1.0kHz 25 350 tr VCC=200V, IC=1.0A, IB1=100mA, RL=200Ω ts VCC=200V, IC=1.0A, IB1=IB2=100mA tf VCC=200V, IC=1.0A, IB1=IB2=100mA Is/b VCE=100V 350 - 2N3584 375 250 6.0 2.0 5.0 1.0 35 -65 to +200 5.0 2N3584 MIN MAX 1.0 3.0 5.0 0.5 250 0.75 1.4 1.4 40 8.0 80 25 100 10 120 3.0 4.0 3.0 350 - 2N3585 500 300 6.0 2.0 2N3585 MIN MAX 1.0 3.0 5.0 0.5 300 0.75 1.4 1.4 40 8.0 80 25 100 10 120 3.0 4.0 3.0 350 - UNITS V V V A A A W °C °C/W UNITS mA mA mA mA mA mA mA V V V V MHz pF μs μs μs mA R2 (22-June 2011) 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R2 (22-June 2011) w w w. c e n t r a l s e m i . c o m