2N3819 N−Channel RF Amplifier TO−92 Type Package

2N3819
N−Channel RF Amplifier
TO−92 Type Package
Description:
The 2N3819 is a N−Channel RF Amplifier transistor designed for RF amplifier and mixer applications
operating up to 450Mhz, and for analog switching requiring low capacitance.
Absolute Maximum Ratings: (TC = +25C, Note 1 unless otherwise specified)
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Total Device Dissipation (TA = +25C ), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C
Storage Temperature Range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W
Note 1. These ratings are limiting values above which the serviceability of the device may be impaired and are based on maximum temperature of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate−Source Breakdown Voltage
Gate Reverse Current
Gate−Source Cutoff Voltage
Gate−Source Voltage
V(BR)GSS
IG = −1.0A, VDS = 0
25
−
−
V
IGSS
VGS = −15V, VDS = 0
−
−
2.0
nA
VGS(off)
VDS = 15V, ID = 2.0nA
−
−
8.0
V
VDS
VDS = 15V, ID = 200
−0.5
−
7.5
V
IDSS
VDS = 15V, ID = 0
2.0
−
20
mA
ON Characteristics
Zero−Gate Voltage Drain Current
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
1600
−
−
mhos
Small−Signal Characteristics
Forward Transfer Admittance
yfs
VDS = 15V, VGS = 0, f = 1kHz
Output Admittance
yos
VDS = 15V, VGS = 0, f = 1.0KHz
−
−
50
mhos
goss
VDS = 15V, VGS = 0, f = 1.0KHz
−
−
50
mhos
Forward Transfer Conductance
gfs
VDS = 15V, VGS = 0, f = 1.0KHz
2000
−
6500
mhos
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1.0KHz
−
−
8.0
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1.0MHz
−
−
4.0
pF
Output Conductance
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
D G S
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max