LET9150 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 150 W with 20 dB gain @ 860 MHz ■ BeO-free package Description The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. M246 Epoxy sealed Figure 1. Pin connection 1-2 Drain 1 2 5 4 3 Source 4-5 Gate Table 1. Device summary Order code Package Branding LET9150 M246 LET9150 December 2010 Doc ID 16369 Rev 6 1/12 www.st.com 12 Contents LET9150 Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 16369 Rev 6 LET9150 Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Value Unit V(BR)DSS Drain-source voltage 80 V VGS Gate-source voltage - 0.5 / + 15 V Drain current 20 A Power dissipation 269 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.65 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage temperature Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Doc ID 16369 Rev 6 3/12 Electrical characteristics 2 LET9150 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static (per section) Symbol 2.2 Test conditions Min 80 Max Unit V(BR)DSS VGS = 0 V IDS = 1 mA IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 5 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 600 mA 5.0 V VDS(ON) VGS = 10 V ID = 3 A 0.9 V GFS VDS = 10 V ID = 3 A CISS VGS = 0 V VDS = 32 V f = 1 MHz 68 pF COSS VGS = 0 V VDS = 32 V f = 1 MHz 33 pF CRSS VGS = 0 V VDS = 32 V f = 1 MHz 0.65 pF V 2.0 0.7 2.5 mho Dynamic Table 5. Dynamic Symbol Test conditions Min Typ Max Unit POUT VDD = 32 V IDQ = 600 mA PIN = 2.5 W 150 175 GPS VDD = 32 V IDQ = 600 mA POUT = 150 W f = 860 MHz 18 20 ηD VDD = 32 V IDQ = 600 mA POUT = 150 W f = 860 MHz 60 69 % 12 dB RTL VDD = 32 V f = 860 MHz IDQ = 600 mA POUT = 150 W f = 860 MHz VDD = 32 V IDQ = 600 mA POUT = 150 W f = 860 MHz Load Mismatch all phase angles 4/12 Typ Doc ID 16369 Rev 6 W - 20:1 dB VSWR LET9150 3 Impedance data Impedance data Figure 2. Impedance data D ZDL Typical drain load Typical input G Zin S Table 6. Impedance data Frequency MHz Z source (Ω) Z load (Ω) 860 0.8 - j 1.3 4.8 - j 2.4 Doc ID 16369 Rev 6 5/12 Typical performances LET9150 4 Typical performances Figure 3. Gain vs output power and bias current @ f= 860 MHz, Vdd = 32 V !-V 'AIN D" Figure 4. Pout (W) 180 Output power and efficiency vs input power AM07296v1 Eff. (%) 80 Efficiency 60 140 Pout )DQM! )DQM! )DQM! )DQM! 40 100 Freq = 860 MHz Vdd = 32 V Idq = 600 mA 60 20 Figure 5. Gain (dB) 0OUT7 Gain and efficiency vs output power @ f= 860 MHz, Vdd = 32 V, Idq= 600 mA AM07297v1 Eff. (%) Gain Efficiency 20 0 Figure 6. Pout (W) 70 22 0.5 1 1.5 2 0 2.5 Pin(W) Output power vs drain supply voltage AM07298v1 Freq = 860 MHz Idq = 600 mA 160 50 18 120 30 14 10 0 6/12 40 80 120 160 10 Pout(W) Pin = 0.5 W Pin = 1 W Pin = 1.6 W Pin = 2.8 W 80 40 26 Doc ID 16369 Rev 6 28 30 32 34 36 Vdd(V) LET9150 5 Test circuit Test circuit Figure 7. Table 7. Test circuit schematic Test circuit component part list Item Qty. Part number Vender Description R1, R3 2 CR1206-8W-130JB VENKEL 1.2 KΩ, 1/8 W surface mount chip resistor R2,R4 2 CR1206-8W-122JB VENKEL 13 Ω, 1/8 W surface mount chip resistor FB1,2,3,4,4,6 2 2743021447 FAIR-RITE CORP C1,C2,C5,C6 4 C3,C4,C7,C8 4 ATC100B200XXXX ATC 20 pF chip capacitor C9,C10 2 ATC200B203MW ATC 20000 pF chip capacitor C11, C12 2 ATC100B510XXXX ATC 51 pF chip capacitor C13,17 2 27291PC JOHANSON C14,15 2 ATC100B130XXXX ATC C16 1 C18,19 1 ATC100B1R3XXXX ATC 1.3 pF chip capacitor C20,C21 1 ATC100B180XXXX ATC 18 pF chip capacitor B1,B2 2 EZ 141 HUBERSUHNER TL21, TL22 2 Surface mount EMI sheild bead 100 µF, 63 V electrolytic capacitor JOHANSON 0.8-8 pF giga trim variable capacitor 13 pF chip capacitor 0.6-4.5 pF giga trim variable capacitor BALUN , 50 Ω SUCOFORM, OD 0.141. 2.37 LG coaxial cable or equivalent L= 0.200in [5.08mm] Doc ID 16369 Rev 6 W=0.082in [2.08mm] 7/12 Test circuit Table 7. LET9150 Test circuit component part list (continued) Item Qty. TL1, TL2 2 L= 0.229in [5.81mm] W=0.300in [7.62mm] TL3, TL4 2 L= 0.207in [5.27mm] W=0.300in [7.62mm] TL5, TL6 2 L= 0.156in [3.96mm] W=0.503in [12.76mm] TL7, TL8 2 L= 0.134in [3.41mm] W=0.503in [12.76mm] TL9,TL10,TL11, TL12 4 L= 2.37in W=0.082in [2.08mm] TL13,TL14 2 L= 0.077in [1.94mm] W=0.230in [5.84mm] TL15,TL16 2 L= 0.200in [5.08mm] W=0.230in [5.84mm] TL17,TL18 2 L= 0.235in [5.96mm] W=0.230in [5.84mm] TL17,TL19 2 L= 0.287in [7.29mm] W=0.168in [4.27mm] Board 3X5 1 Er=2.55 h=0.030in Figure 8. Part number Vender Rogers Corp Description t=0.0026in Test circuit + + 8/12 [60.19mm] Doc ID 16369 Rev 6 LET9150 6 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 16369 Rev 6 9/12 Package mechanical data Table 8. LET9150 M246 (0.230 x 0.650 WIDE 4/L BAL N/HERM W/FLG) mechanical data Dim. mm. Min Typ Inch Max Min Max A 5.33 5.59 0.210 0.220 B 6.48 6.73 0.255 0.265 C 17.27 18.29 0.680 0.720 D 5.72 5.97 0.225 0.235 E 22.86 .900 F 28.83 29.08 1.135 1.145 G 16.26 16.76 0.640 0.660 H 4.19 5.08 0.165 0.200 I 0.08 0.15 0.003 0.006 J 1.83 2.24 0.072 0.088 K 1.40 1.65 0.055 0.065 L 3.18 3.43 0.125 0.135 Figure 9. Package dimensions Controlling dimension: Inches 10/12 Typ Doc ID 16369 Rev 6 Ref. 7145054A LET9150 7 Revision history Revision history Table 9. Document revision history Date Revision Changes 05-Oct-2009 1 First Issue. 18-Oct-2009 2 Updated VGS in Table 2. 11-Feb-2010 3 Changed test condition for V(BR)DSS in Table 4: Static (per section). 29-Jun-2010 4 Added Section 3: Impedance data and Section 4: Typical performances. Updated Table 5. 12-Jul-2010 5 Updated Figure 4: Output power and efficiency vs input power and Figure 6: Output power vs drain supply voltage. 22-Dec-2010 6 Inserted new Section 5: Test circuit. Doc ID 16369 Rev 6 11/12 LET9150 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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