T1635T-8T - STMicroelectronics

T1635T-8T
16 A Snubberless™ Triac
Datasheet − production data
Features
A2
• Medium current Triac
• High static and dynamic commutation
G
• Three quadrants
A1
• ECOPACK®2 compliant component
A2
Applications
• General purpose AC line load switching
G
A2
A1
• Motor control circuits
• Small home appliances
• Lighting
TO-220AB
(T1635T-8T)
• Inrush current limiting circuits
• Overvoltage crowbar protection
Description
Table 1. Device summary
Symbol
Value
Unit
IT(rms)
16
A
VDRM, VRRM
800
V
VDSM, VRSM
900
V
IGT
35
mA
Available in through-hole package, the
T1635T-8T Triac can be used for the on/off or
phase angle control function in general purpose
AC switching where high commutation capability
is required. This device can be used without a
snubber circuit when the limits defined in this
datasheet are respected.
TM: Snubberless is a trademark of STMicroelectronics
July 2014
This is information on a product in full production.
DocID024573 Rev 3
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www.st.com
9
Characteristics
1
T1635T-8T
Characteristics
Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise stated)
Symbol
IT(rms)
ITSM
I ²t
Parameter
Value
Unit
A
On-state rms current (full sine wave)
Tc = 129 °C
16
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, Tj initial = 25 °C) F = 60 Hz
t = 20 ms
120
t = 16.7 ms
126
I²t value for fusing, Tj initial = 25 °C
tp = 10 ms
95
Tj = 150 °C
600
Tj = 125 °C
800
A
A ²s
VDRM,
VRRM
Repetitive surge peak off-state voltage
VDSM,
VRSM
Non repetitive surge peak off-state voltage
tp = 10 ms
900
V
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
F = 100 Hz
100
A/µs
IGM
Peak gate current
Tj = 150 °C
4
A
Tj = 150 °C
1
W
- 40 to + 150
- 40 to + 150
°C
260
°C
PG(AV)
tp = 20 µs
Average gate power dissipation
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
TL
Maximum lead temperature for soldering during 10 s
V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
Value
Min.
1.75
Max.
35
I - II - III
Max.
1.3
V
I - II - III
Min.
0.2
V
Max.
40
mA
IGT (1)
VD = 12 V, RL = 30 Ω
I - II - III
VGT
VD = 12 V, RL = 30 Ω
VGD
VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
mA
I - III
dV/dt
(dI/dt)c
II
VD = 536 V, gate open
Tj = 125 °C
VD = 402 V, gate open
Tj = 150 °C
Tj = 125 °C
Tj = 150 °C
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1
2/9
60
Max.
Without snubber (dV/dt)c > 20 V/µs)
DocID024573 Rev 3
Unit
mA
65
2000
V/µs
1000
V/µs
Min.
16
Min.
A/ms
8
T1635T-8T
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
VT (1)
Value
Unit
ITM = 22.6 A, tp = 380 µs
Tj = 25 °C
Max.
1.55
V
Vt0
(1)
Threshold voltage
Tj = 150 °C
Max.
0.85
V
Rd
(1)
Dynamic resistance
Tj = 150 °C
Max.
27
mΩ
7.5
µA
Tj = 25 °C
VDRM = VRRM = 800 V
IDRM
IRRM
Max.
Tj = 125 °C
VDRM = VRRM = 600 V
1
mA
Tj = 150 °C
Max.
3.0
1. For both polarities of A2 referenced to A1
Table 5. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
1.1
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
20
Figure 2. On-state rms current versus case
temperature (full cycle)
P(W)
18
18
IT(RMS)(A)
16
16
14
14
12
12
10
10
8
8
6
6
4
180°
4
2
IT(RMS)(A)
2
0
2
4
6
8
10
12
14
16
Figure 3. On-state rms current versus ambient
temperature (free air convection)
3.0
TC(°C)
0
0
IT(RMS)(A)
0
25
50
75
100
125
150
Figure 4. Relative variation of thermal
impedance versus pulse duration
1.0E+00
K = [Zth / Rth]
Zth(j-c)
2.5
2.0
1.0E-01
1.5
Zth(j-a)
1.0
0.5
Ta(°C)
tp (s)
0.0
1.0E-02
0
25
50
75
100
125
150
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04
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Characteristics
T1635T-8T
Figure 5. On-state characteristics (maximum
values)
Figure 6. Surge peak on-state current versus
number of cycles
ITM(A)
1000
ITSM(A)
Tjmax:
Vto = 0.85 V
Rd = 27 mW
100
10
Tj=150 °C
Tj=25 °C
VTM(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I2t
10000
ITSM(A), I²t (A²s)
130
120
110
100
90
80
70
60
50
40
30
20
Repetitive
10
0 Tc = 129 °C
1
Non repetitive
Tj initial = 25 °C
One cycle
Number of cycles
10
100
1000
Figure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
2.0
Tj initial = 25 °C
t = 20 ms
IGT, VGT [Tj] / IGT, VGT [Tj = 25 °C]
dl/dt limitation: 100 A / µs
IGT Q3
1.5
IGT Q1 - Q2
1000
ITSM
VGT
1.0
I²t
100
0.5
tp(ms)
sinusoidal pulse with width tp<10 ms
10
0.01
0.10
1.00
-50
10.00
Figure 9. Relative variation of static dV/dt
immunity versus junction temperature (typical
values)
5
TC(°C)
0.0
dV/dt [Tj] / dV/dt [Tj = 150 °C]
-25
0
25
50
75
100
125
150
Figure 10. Relative variation of holding current
and latching current versus junction
temperature (typical values)
2.0
IH, IL[Tj] / IH, IL[Tj = 25 °C]
VD =VR= 402 V
4
1.5
3
1.0
2
IL
0.5
1
IH
Tj(°C)
T j(°C)
0.0
0
25
4/9
50
75
100
125
150
-50
DocID024573 Rev 3
-25
0
25
50
75
100
125
150
T1635T-8T
Characteristics
Figure 11. Relative variation of critical rate of
decrease of main current (di/dt)c versus
reapplied (dV/dt)c
4
Figure 12. Relative variation of critical rate of
decrease of main current (di/dt)c versus
junction temperature (typical values)
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
9
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
8
7
3
6
5
2
4
3
1
2
(dV/dt)c (V/µs)
1
Tj(°C)
0
0
0.1
1.0
10.0
100.0
25
50
75
100
125
150
Figure 13. Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
1.0E+00
IDRM, IRRM @ [Tj]; VDRM, VRRM] / IDRM, IRRM @ [Tjmax]*
VDRM = VRRM = 800 V
VDRM = VRRM = 600 V
1.0E-01
VDRM = VRRM = 400 V
1.0E-02
*IDRM, IRRM @:
[Tj=125 °C; 800 V]
[Tj=150 °C, 600 V]
1.0E-03
Tj(°C)
1.0E-04
25
50
75
100
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125
150
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Package information
2
T1635T-8T
Package information
•
Epoxy meets UL94, V0
•
Lead-free package
•
Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 14. TO-220AB dimension definitions
A
E
∅P
Resin gate
0.5 mm max.
protrusion(1)
F
Q
H1
D D1
L30
L20
b1
J1
L1
L
b
e
e1
Resin gate
0.5 mm max.
protrusion(1)
(1) Resin gate position accepted in each of the two
position shown as well as the symmetrical opposites
6/9
DocID024573 Rev 3
c
T1635T-8T
Package information
Table 6. TO-220AB dimension values
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.17
0.18
b
0.61
0.88
0.024
0.035
b1
1.14
1.70
0.045
0.067
c
0.48
0.70
0.019
0.027
D
15.25
15.75
0.60
0.62
D1
1.27 typ.
0.05 typ.
E
10
10.40
0.39
0.41
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.19
0.20
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.24
0.26
J1
2.40
2.72
0.094
0.107
L
13
14
0.51
0.55
L1
3.50
3.93
0.137
0.154
L20
16.40 typ.
0.64 typ.
L30
28.90 typ.
1.13 typ.
∅P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
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Ordering information
3
T1635T-8T
Ordering information
Figure 15. Ordering information scheme
T
16
35
T -
8
T
Triac
Current
16 = 16 A
Gate sensitivity
35 = 35 mA
Specific application
T = Increased (dI/dt)c and dV/dt producing reduced ITSM
Voltage (VDRM, VRRM)
8 = 800 V
Package
T = TO-220AB
Table 7. Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
T1635T-8T
T1635T-8T
TO-220AB
2.0 g
50
Tube
Revision history
Table 8. Document revision history
8/9
Date
Revision
Changes
05-Aug-2013
1
Initial release.
01-Jul-2014
2
Updated Table 2.
28-Jul-2014
3
Updated Table 5.
DocID024573 Rev 3
T1635T-8T
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