STMICROELECTRONICS T1610T-8I

T1610T-8I
Logic level 16 A Triac
Datasheet − production data
Features
A2
■
High static and dynamic commutation
■
Three quadrants
■
Logic level (direct microcontroller driven)
■
Package is RoHS (2002/95/EC) compliant
■
Tab insulated, voltage = 2500 V rms
■
UL certified (ref. file E81734)
G
A1
A1
A2
G
Applications
■
General purpose AC line load switching
■
Home appliances:
– Fan
– Pump
– Solenoid
■
Lighting
■
Heaters
■
Inrush current limiting circuits
■
Overvoltage crowbar protection circuits
TO-220AB insulated
(T1610T-8l)
Table 1.
Device summary
Order code
Quadrants
Value IGT (mA)
T1610T-8I
I - II - III
10
Description
Available in TO220AB-Insulated (ceramic
insulated), the T1610T-8I series of Triac can be
used in an on/off or phase angle control function
in general purpose AC switching.
T1610T-8I can be directly driven through a
microcontroller allowing usage of small capacitive
or resistive power supplies.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
April 2012
This is information on a product in full production.
Doc ID 018766 Rev 3
1/10
www.st.com
10
Characteristics
T1610T-8I
1
Characteristics
Table 2.
Absolute maximum rating (Tj = 25 °C, unless otherwise specified)
Symbol
IT(RMS)
ITSM
I ²t
Parameter
Value
Tc = 108 °C
16
Tc = 119 °C
12
F = 50 Hz
t = 20 ms
120
F = 60 Hz
t = 16.7 ms
126
tp = 10 ms
95
Tj = 150 °C
600
Tj = 125 °C
800
Tj = 25 °C
900
V
100
A/µs
4
A
1
W
-40 to +150
-40 to +150
°C
260
°C
2500
V
On-state rms current (full sine wave)
Non repetitive surge peak on-state current (full
cycle, Tj initial = 25 °C)
Repetitive peak off-state voltage, gate open
VDSM,
VRSM
Non repetitive surge peak
off-state voltage
tp = 10 ms
dI/dt
Critical rate of rise of on-state current IG = 2 x IGT
F = 100 Hz
IGM
Peak gate current
tp = 20 µs
PG(AV)
Tstg
Tj
TL
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Lead temperature for soldering during 10 s
(at 4 mm from case for TO220AB-ins.)
Vins (rms) Insulation rms voltage, 1 minute, TO220AB ceramic insulated
2/10
A
A
I²t Value for fusing
VDRM,
VRRM
Unit
Doc ID 018766 Rev 3
A²s
V
T1610T-8I
Table 3.
Characteristics
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Unit
MIN.
0.5
mA
I - II - III
MAX.
10
mA
VD = 12 V, RL = 30 Ω
All
MAX.
1.3
V
VD = 800 V, RL = 3.3 kΩ, Tj = 125 °C
All
MIN.
0.2
V
MAX.
25
mA
VD = 12 V, RL = 30 Ω
VGT
VGD
IH
Value
I - II - III
IGT (1)
(1)
Quadrant
IT = 500 mA
I - III
IL
dV/dt (1)
(dl/dt)c (1)
tGT
IG = 1.2 IGT
20
MAX.
mA
II
VD = 67% x 800 V gate open
Tj = 125 °C
VD = 67% x 600 V gate open
Tj = 150 °C
(dV/dt)c = 0.1 V/µs
Tj = 125 °C
(dV/dt)c = 10 V/µs
Tj = 125 °C
30
100
MIN.
V/µs
50
9
3
MIN.
A/ms
(dV/dt)c = 0.1 V/µs
Tj = 150 °C
5.4
(dV/dt)c = 10 V/µs
Tj = 150 °C
1.8
gate controlled turn on time ITM = 13 A, VD = 400 V,
IG = 100 mA, dIG/dt = 100 mA/µs, RL = 30 Ω
I - II - III
TYP.
2
µs
1. For both polarities of A2 referenced to A1
Table 4.
Static characteristics
Symbol
VTM (1)
Test conditions
Value
Unit
ITM = 22.6 A, tp = 380 µs
Tj = 25 °C
MAX.
1.55
V
Vto
(1)
Threshold voltage
Tj = 150 °C
MAX.
0.85
V
Rd
(1)
Dynamic resistance
Tj = 150 °C
MAX.
30
mΩ
5
µA
IDRM
IRRM
Tj = 25 °C
VDRM = VRRM = 800 V
Tj = 125 °C
VDRM = VRRM = 600 V
Tj = 150 °C
MAX.
1
mA
3.6
1. for both polarities of A2 referenced to A1
Table 5.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
2.1
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
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Characteristics
Figure 1.
20
T1610T-8I
Maximum power dissipation versus Figure 2.
on-state rms current (full cycle)
P(W)
18
180°
18
On-state rms current versus case
temperature (full cycle)
IT(RMS)(A)
16
16
14
14
12
12
10
10
8
8
6
6
4
4
2
2
IT(RMS)(A)
0
0
2
4
Figure 3.
3.0
6
8
10
12
14
On-state rms current versus
ambient temperature
(free air convection)
IT(RMS)(A)
16
TC(°C)
0
0
25
Figure 4.
1.0E+00
50
75
100
125
150
Relative variation of thermal
impedance versus pulse duration
K = [Zth / Rth]
Zth(j-c)
2.5
Zth(j-a)
2.0
1.5
1.0E-01
1.0
0.5
Ta(°C)
0.0
0
25
Figure 5.
50
Tp(s)
75
100
125
150
On-state characteristics
(maximum values)
1000
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04
Figure 6.
ITM(A)
130
Tjmax:
Vto = 0.85 V
Rd = 30 mΩ
Surge peak on-state current versus
number of cycles
ITSM(A)
120
110
t = 20 ms
100
90
100
One cycle
80
Non repetitive
Tj initial = 25 °C
70
60
Tj = 150 °C
50
10
Repetitive
Tc = 108 °C
40
30
Tj = 25 °C
20
0
4/10
10
VTM(V)
1
1
2
3
4
Number of cycles
0
5
Doc ID 018766 Rev 3
1
10
100
1000
T1610T-8I
Characteristics
Figure 7.
Non repetitive surge peak on-state Figure 8.
current and corresponding values
of I2t
10000
ITSM (A), I²t (A²s)
Relative variation of gate trigger
current versus junction
temperature (typical values)
IGT[Tj]/IGT[Tj = 25 °C]
2.0
typical values
Tj initial = 25 °C
IGT Q3
1.5
1000
ITSM
IGT Q1-Q2
1.0
dl /dt limitation: 100 A / µs
I²t
100
0.5
Sinusoidal pulse width tp<10 ms
tp(ms)
10
0.01
Figure 9.
2.0
0.10
1.00
Tj(°C)
0.0
-50 -30 -10
10.00
Relative variation of gate trigger
voltage versus junction
temperature (typical values)
VGT[Tj] / VGT[Tj = 25 °C]
10
30
50
70
90
110 130 150
Figure 10. Relative variation of holding
current and latching current versus
junction temperature
2.0
IH, IL[Tj] / IH, IL[Tj = 25 °C]
typical values
1.5
1.5
1.0
1.0
VGT
IL
0.5
0.5
0.0
-50 -30 -10
Tj(°C)
10
30
50
70
90
110 130 150
IH
0.0
-50 -30 -10
Tj(°C)
10
30
50
70
90
110 130 150
Figure 11. Relative variation of critical rate of Figure 12. Relative variation of critical rate of
decrease of current (dI/dt)c versus
decrease of current (dI/dt)c versus
reapplied (dV/dt)c
junction temperature
4
(dI/dt)c[(dV/dt)c]/Specified(dI/dt)c[(dV/dt)c 10 V/µs]
10
typical values
logic level
(dl / dt)c [Tj] / (dl / dt)c [Tj = 150 °C]
typical values
9
8
3
7
6
2
5
4
3
1
2
1
(dV/dt)c (V/µs)
0
0.1
1.0
10.0
100.0
0
25
Doc ID 018766 Rev 3
Tj(°C)
50
75
100
125
150
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Characteristics
T1610T-8I
Figure 13. Relative variation of static dV/dt
immunity versus junction
temperature
4
Figure 14. Relative variation of static dV/dt
immunity versus junction
temperature
dV / dt [Tj] / dV / dt [Tj = 125 °C]
7
dV / dt [Tj] / dV / dt [Tj = 150 °C]
VD = VR = 402 V
VD = VR = 536 V
6
3
5
4
2
3
2
1
1
0
25
Tj(°C)
50
75
100
Tj(°C)
0
25
125
50
75
100
125
150
Figure 15. Relative variation of leakage current versus junction temperature for different values
of blocking voltage
1.0E+00
IDRM/IRRM [Tj; VDRM / VRRM] / IDRM/IRRM
VDRM = VRRM = 800 V
1.0E-01 VDRM = VRRM = 600 V
1.0E-02
[Tj = 125 °C; 800 V];
[Tj = 150 °C; 600 V]
1.0E-03
VDRM = VRRM = 400 V
Tj(°C)
1.0E-04
25
6/10
50
75
100
125
Doc ID 018766 Rev 3
150
T1610T-8I
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TO-220AB insulated dimensions
Dimensions
Ref.
Millimeters
Min.
A
15.20
a1
C
B
ØI
Typ.
Max.
Inches
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
b2
L
F
A
I4
l3
c2
a1
l2
a2
M
b1
e
c1
M
Doc ID 018766 Rev 3
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0.102
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Ordering information scheme
3
T1610T-8I
Ordering information scheme
Figure 16. Ordering information scheme
T
16
Triac series
Current
16 = 16 Ampere
Sensitivity
10 = 10 mA
Specific application
Voltage
8 = 800 V
Package
I = TO220AB-insulated
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Doc ID 018766 Rev 3
10
T
-
8
I
T1610T-8I
4
Ordering information
Ordering information
Table 7.
5
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
T1610T-8I
T1610T-8I
TO-220AB
insulated
2.3
50
Tube
Revision history
Table 8.
Document revision history
Date
Revision
Changes
08-Aug-2011
1
First issue.
20-Jan-2012
2
Corrected subscripting error in Table 3.
25-Apr-2012
3
Updated UL certification.
Doc ID 018766 Rev 3
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T1610T-8I
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