STMICROELECTRONICS T1235T-6I

T12T
Snubberless™, logic level and standard 12 A Triacs
Features
A2
■
Medium current Triac
■
High static and dynamic commutation
■
Low thermal resistance with clip bonding
■
Packages is RoHS (2002/95/EC) compliant
■
600 V VRM
G
A1
A1
A2
Applications
■
Value sensitive application
■
General purpose ac line load switching
■
Motor control circuits in power tools
■
Small home appliances, lighting
■
Inrush current limiting circuits
■
Overvoltage crowbar protection
G
TO-220AB insulated
(T12xxT-6I)
Table 1.
Description
Available in through-hole, the T12T series of
Triacs can be used as on/off or phase angle
control function in general purpose ac switching
where high commutation capability is required.
Device summary
Order code
Symbol
Value
T1220T-6I
T1235T-6I
IGT 3Q
Snubberless
20 / 35 mA
T1225T-6I
IGT 4Q
standard
25 mA
T1210T-6I
IGT 3Q
logic level
10 mA
This series can be designed-in in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
January 2010
Doc ID 16487 Rev 2
1/9
www.st.com
9
Characteristics
T12T
1
Characteristics
Table 2.
Absolute maximum ratings (limiting values; Tj = 25 °C, unless otherwise specified)
Symbol
IT(RMS)
ITSM
I ²t
dI/dt
VDSM /
VRSM
IGM
PG(AV)
Tstg
Tj
2/9
Parameter
On-state rms current (full sine wave)
Value
Unit
Tc = 88 °C
12
A
Non repetitive surge peak on-state current (full
cycle, Tj initial = 25 °C)
F = 50 Hz
tp = 20 ms
90
F = 60 Hz
tp = 16.7 ms
95
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current IG = 2 x IGT
tr ≤ 100 ns
F = 60 Hz
Non repetitive surge peak off-state
voltage
Peak gate current
A
54
A²s
Tj = 125 °C
50
A/µs
tp = 10 ms
Tj = 25 °C
VDRM/VRRM
+ 100
V
tp = 20 µs
Tj = 125 °C
4
A
Tj = 125 °C
1
W
Storage junction temperature range
- 40 to + 150
°C
Operating junction temperature range
- 40 to + 125
°C
Average gate power dissipation
Doc ID 16487 Rev 2
T12T
Table 3.
Characteristics
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
T12xxT
Symbol
Test conditions
Quadrant
Unit
T1210T T1220T T1225T T1235T
IGT (1)
I - II - III
VD = 12 V RL = 30 Ω
10
20
25
35
MAX.
mA
IV
40
VGT
VD = VDRM, RL = 3.3 kΩ,
Tj = 25 °C
ALL
MAX.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ,
Tj = 125 °C
ALL
MIN.
0.2
V
IH (2)
IT = 500 mA
MAX.
I - III
IL
IV
IG = 1.2 IGT
VD = 67% VDRM, gate open
Tj = 125 °C
Tj = 150 °C(3)
15
20
30
20
35
40
50
MAX.
II
dV/dt (2)
10
40
(di/dt)c (2)
mA
30
40
60
80
100
1000
100
2000
50
500
50
1000
MIN.
V/µs
(dV/dt)c = 0.1 V/µs
Tj = 125 °C
(dV/dt)c = 10 V/µs
7
7
3
3
Without snubber
6
12
MIN.
(dV/dt)c = 0.1 V/µs
Tj = 150 °C(3)
(dV/dt)c = 10 V/µs
mA
A/ms
3
3
1
1
Without snubber
3
10
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
3. derating information for excess temperature above Tj max.
Table 4.
Static characteristics
Symbol
Test conditions
Value
Unit
VT (1)
ITM = 17 A, tp = 380 µs
Tj = 25 °C
MAX.
1.55
V
VTO (1)
Threshold voltage
Tj = 125 °C
MAX.
0.85
V
Dynamic resistance
Tj = 125 °C
MAX.
35
mΩ
5
µA
RD
(1)
IDRM
IRRM
Tj = 25 °C
VDRM = VRRM
MAX.
Tj = 125 °C
Tj = 150 °C(2)
VD = 0.9 x VDRM
1
mA
TYP.
1.9
1. for both polarities of A2 referenced to A1.
2. derating information for excess temperature above Tj max.
Doc ID 16487 Rev 2
3/9
Characteristics
Table 5.
T12T
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
2.6
°C/W
Rth(j-a)
Junction to ambient (DC)
60
°C/W
Figure 1.
Maximum power dissipation versus Figure 2.
rms on-state current (full cycle)
P(W)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
On-state rms current versus case
temperature (full cycle)
IT(RMS) (A)
13
12
α=180°
α=180°
11
10
9
8
7
6
5
180°
4
3
2
1
IT(RMS)(A)
0
1
Figure 3.
2
3
4
5
6
7
8
9
10
11
On-state rms current versus
ambient temperature
0
25
Figure 4.
IT(RMS) (A)
3.0
TC(°C)
0
12
1.0E+00
50
75
100
Relative variation of thermal
impedance versus pulse duration
K=[Zth/Rth]
Zth(j-c)
Zth(j-a)
α=180°
2.5
125
2.0
1.0E -01
1.5
1.0
0.5
0.0
tP(s)
Ta (°C)
0
25
Figure 5.
100
50
75
100
125
On state characteristics
(maximum values)
1.0E -02
1.0E -03
Figure 6.
ITM (A)
100
1.0E -02
1.0E -01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Surge peak on state current versus
number of cycles
ITSM (A)
90
80
t=20ms
70
One cycle
Non repetitive
Tj initial=25°C
60
10
50
40
Repetitive
TC=88 °C
30
Tj=125 °C
20
Tj=25 °C
1
0
4/9
1
Tj max :
Vto = 0.85 V
Rd = 35 mΩ
VTM (V)
2
10
Number of cycles
0
3
4
5
1
Doc ID 16487 Rev 2
10
100
1000
T12T
Characteristics
Figure 7.
Non repetitive surge peak on state
current for a sinusoidal
Figure 8.
ITSM (A), I²t (A²s)
1000
3.0
Tj initial=25°C
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
IGT, VGT [Tj] / IGT, VGT [Tj=25 °C]
typical values
ITSM
2.5
dI/dt limitation: 50 A/µs
IGT Q3
2.0
IGT Q1-Q2
1.5
100
I²t
VGT Q1-Q2-Q3
1.0
0.5
2
tP(ms)
pulse with width tp < 10 ms and corresponding value of I T
10
0.01
0.10
Figure 9.
2.5
1.00
10.00
Tj(°C)
0.0
- 50
-25
0
25
50
75
100
125
Relative variation of holding
Figure 10. Relative variation of critical rate of
current and latching current versus
decrease of main current versus
junction temperature
(dV/dt)c
IH, IL [T j] / IH, IL [T j=25 °C]
7
dV/dt [T j] / dV/dt [T j=125 °C]
typical values
VD=VR=402 V
typical values
Logic Level and Snubberless types
6
2.0
5
1.5
4
3
1.0
IL
2
IH
0.5
1
Tj(°C)
0.0
-50
-25
0
25
50
75
100
125
Figure 11. Relative variation of critical rate of
decrease of main current versus
junction temperature
8
(dI/dt) C [T j] / (dI/dt) c [T j=125 °C]
T j(°C)
0
25
50
75
100
125
Figure 12. Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
1.0E+00
IDRM/IRRM [Tj;V DRM/ VRRM]/IDRM/IRRM [Tj=125°C;7 00V]
VDRM=VRRM
=600 V
7
VDRM=VRRM
=400 V
6
1.0E-01
5
4
3
VDRM=VRRM
=200 V
1.0E-02
2
1
0
25
T j(°C)
50
75
100
125
1.0E-03
25
Doc ID 16487 Rev 2
T j(°C)
50
75
100
125
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Ordering information scheme
2
T12T
Ordering information scheme
Figure 13. Ordering information scheme
T
Triac
Current
12 = 12 A
Sensitivity
10 = 10 mA
20 = 20 mA
25 = 25 mA
35 = 35 mA
Application specific
Voltage
6 = 600 V
Package
I = TO-220AB-Ins.
6/9
Doc ID 16487 Rev 2
12
10
T
-
6
I
T12T
3
Package mechanical data
Package mechanical data
●
Epoxy meets UL94, V0
●
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TO-220AB insulated dimensions
Dimensions
Ref.
Millimeters
Min.
A
15.20
a1
C
B
ØI
Typ.
Max.
Inches
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
b2
L
F
A
I4
l3
c2
a1
l2
a2
M
b1
c1
e
M
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0.102
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Ordering information
4
Ordering information
Table 7.
5
Ordering information
Order code
Marking
T1210T-6I
T1210T-6I
T1220T-6I
T1220T-6I
T1225T-6I
T1225T-6I
T1235T-6I
T1235T-6I
Package
Weight
Base qty
Delivery mode
TO-220AB-ins.
2.3 g
50
Tube
Revision history
Table 8.
8/9
T12T
Document revision history
Date
Revision
Changes
03-Dec-2009
1
Initial release.
18-Jan-2010
2
Updated pag.1.
Doc ID 16487 Rev 2
T12T
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