STMICROELECTRONICS T410H-6T

T410H
High temperature 4 A sensitive TRIACs
Features
A2
■
Medium current TRIAC
■
Logic level sensitive TRIAC
■
150 °C max. Tj turn-off commutation
■
Clip bounding
■
RoHS (2002/95/EC) compliant package
G
A1
Applications
A2
■
The T410H is designed for the control of AC
actuators in appliances and industrial systems.
■
The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through this sensitive gate
TRIAC.
G
A2
A1
TO-220AB
T410H-6T
Description
Specifically designed to operate at 150 °C, the
new 4 A T410H TRIAC provides an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electromechanical solutions.
Based on ST logic level technology, the T410H
offers an IGT lower than 10 mA and specified
minimal commutation and high noise immunity
levels valid up to the Tj max.
May 2009
Table 1.
Device summary
Symbol
Value
Unit
IT(RMS)
4
A
VDRM/VRRM
600
V
IGT MAX
10
mA
Doc ID 15712 Rev 1
1/9
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9
Characteristics
T410H
1
Characteristics
Table 2.
Absolute maximum ratings
Symbol
IT(RMS)
ITSM
I ²t
dI/dt
Parameter
On-state rms current (full sine wave)
PG(AV)
Tstg
Tj
Table 3.
VGT
VGD
IH
(1)
IL
dV/dt (1)
(dI/dt)c (1)
4
A
t = 16.7 ms
42
F = 50 Hz
t = 20 ms
40
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Peak gate current
A
11
A ²s
Tj = 150 °C
50
A/µs
tp = 10 ms
Tj = 25 °C
VDRM/VRRM
+ 100
V
tp = 20 µs
Tj = 150 °C
4
A
Tj = 150 °C
1
W
- 40 to + 150
- 40 to + 150
°C
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
VD = 12 V RL = 33 Ω
Quadrant
Min.
Max.
Unit
I - II - III
1
10
mA
1.0
V
I - II - III
VD = VDRM, RL = 3.3 kΩ
I - II - III
0.15
IT = 100 mA
V
25
IG = 1.2 IGT
I - III
30
II
35
mA
mA
VD = 67% VDRM, gate open, Tj = 150 °C
75
Logic level, 0.1 V/µs, Tj = 150 °C
5.7
Logic level, 15 V/µs, Tj = 150 °C
1.5
1. For both polarities of A2 referenced to A1.
2/9
Tc = 141 °C
F = 60 Hz
Symbol
IGT
Unit
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
VDSM/VRSM Non repetitive surge peak off-state voltage
IGM
Value
Doc ID 15712 Rev 1
V/µs
A/ms
T410H
Characteristics
Table 4.
Static characteristics
Symbol
VT (1)
Test conditions
Value
Unit
ITM = 5.6 A, tp = 380 µs
Tj = 25 °C
MAX.
1.5
V
Vt0
(1)
Threshold voltage
Tj = 150 °C
MAX.
0.80
V
Rd
(1)
Dynamic resistance
Tj = 150 °C
MAX.
80.0
mΩ
Tj = 25 °C
MAX.
5
µA
Tj = 150 °C
MAX.
2.2
VD/VR = 400 V (at peak mains voltage) Tj = 150 °C
MAX.
1.75
VD/VR = 200 V (at peak mains voltage) Tj = 150 °C
MAX.
1.5
VDRM = VRRM
IDRM
IRRM
mA
1. for both polarities of A2 referenced to A1.
Table 5.
Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
Figure 1.
Value
Unit
2.20
°C/W
60
Maximum power dissipation versus Figure 2.
on-state rms current (full cycle)
P(W)
On-state rms current versus case
temperature (full cycle)
IT(RMS)(A)
4
4
3
3
2
2
1
1
TC(°C)
IT(RMS)(A)
0
0
0
1
Figure 3.
2
3
4
On-state rms current versus
ambient temperature (free air
convection, full cycle)
0
25
Figure 4.
50
75
100
125
150
Relative variation of thermal
impedance, versus pulse duration
K=[Zth/Rth]
IT(RMS)(A)
1.E+00
3.0
2.5
Zth(j-c)
1.E-01
2.0
Zth(j-a)
1.5
1.0
1.E-02
0.5
tp(s)
Ta (°C)
0.0
0
25
50
75
100
125
150
1.E-03
1.E-03
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1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
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Characteristics
Figure 5.
T410H
Relative variation of gate trigger
Figure 6.
current and voltage versus junction
temperature (typical values)
IGT, VGT[T j] / IGT, VGT[T j=25 °C]
Relative variation of holding and
latching current versus junction
temperature (typical values)
IH, IL [T j] / IH, IL [T j=25 °C]
2.0
3.0
IGT Q3
2.5
IGT Q1-Q2
1.5
IL
2.0
IH
1.0
1.5
1.0
VGT Q1-Q2-Q3
0.5
0.5
Tj(°C)
Tj(°C)
0.0
0.0
-50
-25
Figure 7.
0
25
50
75
100
125
150
Surge peak on-state current
versus number of cycles
-50
-25
Figure 8.
ITSM(A)
0
25
50
75
100
125
150
Non-repetitive surge peak on-state
current and corresponding value
of I2t
ITSM (A), I²t (A²s)
1000
45
dI/dt limitation: 50 A/µs
Tj initial=25 °C
40
t=20ms
35
ITSM
One cycle
Non repetitive
Tj initial=25°C
30
100
25
20
15
10
I²t
10
Repetitive
TC=141 °C
5
Number of cycles
tP(ms)
Sinusoidal pulse width tp < 10 ms
0
1
1
10
Figure 9.
100
1000
On-state characteristics
(maximum values)
0.01
0.10
1.00
10.00
Figure 10. Relative variation of critical rate of
decrease of main current versus
junction temperature
ITM (A)
(dI/dt)C [T j] / (dI/dt)c [T j=150 °C]
100
11
Tj max
Vto = 0.80 V
Rd = 80 mΩ
10
9
8
7
6
10
5
Tj=150 °C
4
Tj=25 °C
3
2
1
VTM (V)
0
4/9
1
2
3
T j(°C)
0
1
4
5
25
Doc ID 15712 Rev 1
50
75
100
125
150
T410H
Characteristics
Figure 11. Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values)
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
4
3
2
1
(dV/dt)C (V/µs)
0
0.1
1.0
Figure 12. Relative variation of static dV/dt
immunity versus junction
temperature
10.0
100.0
dV/dt [T j] / dV/dt [T j=150 °C]
VD=VR=400 V
T j(°C)
25
50
75
100
125
150
Figure 13. Variation of leakage current versus Figure 14. Acceptable case to ambient thermal
junction temperature for different
resistance versus repetitive peak
values of blocking voltage
off-state voltage
IDRM/IRRM [Tj;V DRM/ VRRM]/IDRM/IRRM [Tj=150°C; 600V]
Rth(c-a) (°C/W)
1.0E+00
80
VDRM=VRRM=600 V
Rth(j-c)=2.2 °C/W
TJ=150 °C
70
60
1.0E-01
VDRM=VRRM=400 V
50
VDRM=VRRM=200 V
1.0E-02
40
30
20
1.0E-03
10
VAC PEAK(V)
T j(°C)
0
1.0E-04
25
50
75
100
125
150
200
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400
500
600
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Ordering information scheme
2
T410H
Ordering information scheme
Figure 15. Ordering information scheme
T
Triac series
Current
4=4A
Sensitivity
10 = 10 mA
High temperature
Voltage
6 = 600 V
Package
T = TO-220AB
6/9
Doc ID 15712 Rev 1
4
10 H - 6 T
T410H
3
Package information
Package information
●
Epoxy meets UL94, V0
●
Recommended torque 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TO-220AB dimensions
Dimensions
Ref.
Millimeters
Min.
A
15.20
a1
C
B
ØI
F
A
Max.
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
b2
L
Typ.
Inches
I4
l3
c2
a1
l2
a2
M
b1
c1
e
M
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0.102
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Ordering information
4
Ordering information
Table 7.
5
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
T410H-6T
T410H 6T
TO-220AB
2.3 g
50
Tube
Revision history
Table 8.
8/9
T410H
Document revision history
Date
Revision
15-May-2009
1
Changes
First issue.
Doc ID 15712 Rev 1
T410H
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