STP200N4F3 STB200N4F3 N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220 planar STripFET™ Power MOSFET Features Type VDSS RDS(on) Max ID Pw STB200N4F3 40V <0.0040Ω 120A 300W STP200N4F3 40V <0.0044Ω 120A 300W ■ 100% avalanche tested ■ Standard threshold drive 3 1 D²PAK 3 1 2 TO-220 Applications ■ Switching applications – Automotive Description Figure 1. Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications. Table 1. Device summary Order codes Marking Package Packaging STB200N4F3 200N4F3 D²PAK Tape & reel STP200N4F3 200N4F3 TO-220 Tube October 2007 Rev 2 1/14 www.st.com 14 Contents STB200N4F3 - STP200N4F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 9 STB200N4F3 - STP200N4F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25°C 120 A Drain current (continuous) at TC = 100°C 120 A Drain current (pulsed) 480 A Total dissipation at TC = 25°C 300 W Derating factor 2.0 W/°C EAS (3) Single pulse avalanche energy 862 mJ dv/dt(4) Peak diode recovery voltage slope 4.2 V/ns -55 to 175 °C ID (1) ID (1) IDM (2) PTOT Operating junction temperature Storage temperature Tj Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, ID = 60A, VDD= 25V 4. ISD ≤60A, di/dt ≤440 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Rthj-pcb (1) Rthj-amb Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junction-ambient max D²PAK 0.50 °C/W -- 35 °C/W 62.5 -- °C/W 1. When mounted on FR-4 board, 1inch² 2 oz. Cu. 3/14 Electrical characteristics 2 STB200N4F3 - STP200N4F3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Typ. Max. Unit Drain-source breakdown voltage ID = 250µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 80A D²PAK TO-220 V(BR)DSS Table 5. Symbol 40 V 2 0.0035 0.0040 0.0040 0.0044 Ω Ω Dynamic Parameter gfs (1) Forward transconductance Ciss Coss Crss Qg Qgs Qgd Test conditions Min. Typ. Max. Unit VDS =10V, ID = 80A 200 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 5100 1270 37 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD=20V, ID = 120A VGS =10V (see Figure 14) 75 23 17 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/14 Min. STB200N4F3 - STP200N4F3 Table 6. Symbol Electrical characteristics Switching times Parameter Test conditions Min Typ Max Unit td(on) tr Turn-on delay time Rise time VDD=20 V, ID=60A, RG=4.7Ω, VGS=10V (see Figure 13) 19 180 ns ns td(off) tf Off-voltage rise time Fall time VDD=20 V, ID=60A, RG=4.7Ω, VGS=10V (see Figure 13) 90 65 ns ns Table 7. Symbol Source drain diode Parameter Test conditions ISD ISDM Source-drain current Source-drain current (pulsed) VSD Forward on voltage ISD=120A, VGS=0 trr Qrr Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, di/dt = 100A/µs, VDD=20 V, Tj=150°C (see Figure 18) IRRM Min Typ 67 130 4 Max Unit 120 480 A A 1.5 V ns nC A 5/14 Electrical characteristics STB200N4F3 - STP200N4F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs. temperature Figure 7. Static drain-source on resistance 6/14 STB200N4F3 - STP200N4F3 Figure 8. Gate charge vs. gate-source voltage Figure 10. Normalized gate threshold voltage vs. temperature Electrical characteristics Figure 9. Capacitance variations Figure 11. Normalized on resistance vs. temperature Figure 12. Source-drain diode forward characteristics 7/14 Test circuit 3 STB200N4F3 - STP200N4F3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/14 Figure 18. Switching time waveform STB200N4F3 - STP200N4F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STB200N4F3 - STP200N4F3 D²PAK mechanical data mm inch Dim Min A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 10/14 Typ 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 Max Min 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 10.4 0.393 8 10 0.409 0.334 5.28 15.85 1.4 1.75 3.2 0.4 0° Max 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 8.5 4.88 15 1.27 1.4 2.4 Typ 0.192 0.590 0.50 0.055 0.094 0.208 0.625 0.55 0.68 0.126 0.015 4° STB200N4F3 - STP200N4F3 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/14 Packaging mechanical data 5 STB200N4F3 - STP200N4F3 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/14 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB200N4F3 - STP200N4F3 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 02-Mar-2007 1 First release 02-Oct-2007 2 Added TO-220 package 13/14 STB200N4F3 - STP200N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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