STB75NF75L N-channel 75V - 0.009Ω - 75A - D2PAK STripFET™ II Power MOSFET Features Type VDSS RDS(on) ID STB75NF75L 75V <0.011Ω 75A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Low threshold drive 3 1 D²PAK Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Figure 1. Internal schematic diagram Applications ■ Switching applications Table 1. Device summary Order code Marking Package Packaging STB75NF75LT4 B75NF75L D²PAK Tape & reel July 2007 Rev 3 1/13 www.st.com 13 Contents STB75NF75L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STB75NF75L 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 75 V ± 15 V Drain current (continuous) at TC = 25°C 75 A Drain current (continuous) at TC = 100°C 70 A Drain current (pulsed) 300 A Total dissipation at TC = 25°C 300 W Derating factor 2 W/°C Peak diode recovery voltage slope 10 V/ns Single pulse avalanche energy 680 mJ Operating junction temperature Storage temperature -55 to 175 °C Value Unit VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID (1) ID IDM (2) PTOT dv/dt (3) EAS (4) TJ Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤75A, di/dt ≤500A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 4. Starting TJ = 25 oC, ID = 37.5A, VDD = 30V Table 3. Symbol Thermal data Parameter RthJC Thermal resistance junction-case Max 0.5 °C/W RthJA Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/13 Electrical characteristics 2 STB75NF75L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±15V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 37.5A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Typ. Max. 75 1 10 µA µA ±100 nA 2.5 V 0.009 0.010 0.011 0.013 Ω Ω Typ. Max. Unit VDS = Max rating @125°C 1 VGS= 5V, ID= 37.5A Unit V VDS = Max rating, IDSS Table 5. Min. Dynamic Parameter Test conditions Min. Forward transconductance VDS = 15V, ID = 37.5A 120 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f = 1 MHz, VGS = 0 4300 660 205 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD = 60V, ID = 75A VGS = 5V see Figure 15 75 18 31 90 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 6. Symbol td(on) tr td(off) tf 4/13 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 40V, ID = 37.5A, RG = 4.7Ω, VGS = 4.5V see Figure 14 Min. 35 155 110 60 ns ns ns ns STB75NF75L Electrical characteristics Table 7. Symbol Source drain diode Max Unit Source-drain current 75 A ISDM(1) Source-drain current (pulsed) 300 A VSD(2) Forward on voltage 1.3 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD = 75A, VGS = 0 ISD = 75A, di/dt = 100A/µs, VDD = 24V, TJ = 150°C see Figure 16 120 500 9 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/13 Electrical characteristics STB75NF75L 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13 STB75NF75L Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature 7/13 Test circuit 3 STB75NF75L Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/13 STB75NF75L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB75NF75L D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 0.368 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 10/13 STB75NF75L 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.153 0.161 MAX. MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. P0 3.9 4.1 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 1.574 0.933 0.956 * on sales type 11/13 Revision history 6 STB75NF75L Revision history Table 8. 12/13 Revision history Date Revision Changes 21-Jun-2004 1 First release 02-Oct-2006 2 New template, no content change 13-Jul-2007 3 New updates on Table 7 STB75NF75L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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