STH180N10F3-2 N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2 STripFET™III Power MOSFET Features Order codes VDSS RDS(on) max. ID STH180N10F3-2 100 V 4.5 mΩ 180 A ■ Ultra low on-resistance ■ 100% avalanche tested TAB 2 Applications ■ 3 1 H2PAK-2 High current switching applications Description This device is an N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Figure 1. Internal schematic diagram D(TAB) G(1) S(2, 3) SC06140_H2PAK-2 Table 1. Device summary Order codes Marking Package Packaging STH180N10F3-2 180N10F3 H2PAK-2 Tape and reel July 2011 Doc ID 019060 Rev 1 1/15 www.st.com 15 Contents STH180N10F3-2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 019060 Rev 1 STH180N10F3-2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 100 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25°C 180 A ID (1) Drain current (continuous) at TC=100°C 120 A IDM (2) Drain current (pulsed) 720 A PTOT Total dissipation at TC = 25°C 315 W Derating factor 2.1 W/°C Peak diode recovery voltage slope 20 V/ns EAS (3) Single pulse avalanche energy 350 mJ Tj Operating junction temperature storage temperature - 55 to 175 °C Value Unit 0.48 °C/W 35 °C/W dv/dt Tstg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting Tj = 25 °C, ID = 80 A, VDD = 50 V. Table 3. Thermal data Symbol Rthj-case (1) Rthj-pcb Parameter Thermal resistance junction-case Thermal resistance junction-pcb max 1. When mounted on FR-4 board, on 1inch², 2oz Cu. Doc ID 019060 Rev 1 3/15 Electrical characteristics 2 STH180N10F3-2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 250 µA IDSS Zero gate voltage drain current (VGS = 0) VDS= max rating, VDS= max rating,@125°C IGSS Gate body leakage current VGS = ±20 V (VDS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 60 A Table 5. Symbol Min. Typ. Max. 100 Unit V 10 100 µA µA ±200 nA 4 V 3.9 4.5 mΩ Min. Typ. Max. Unit 2 Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 6665 786 49 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 50 V, ID = 120 A, VGS = 10 V (see Figure 14) - 114.6 38.8 31.9 - nC nC nC Min. Typ. Max. Unit - 25.6 97.1 99.9 6.9 - ns ns ns ns Table 6. Symbol td(on) tr td(off) tf 4/15 On/off states Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 50 V, ID = 60 A RG = 4.7 Ω VGS = 10 V (see Figure 13, Figure 18) Doc ID 019060 Rev 1 STH180N10F3-2 Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120 A, VGS=0 Min. Max. Unit - 180 720 A A - 1.5 V ISD=120 A, di/dt = 100 A/µs, VDD=80 V, Tj=150°C (see Figure 15) - Typ. 83.4 295.7 7.1 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 019060 Rev 1 5/15 Electrical characteristics STH180N10F3-2 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM08625v1 ID (A) 280tok K δ=0.5 is ea ar (on) s S i D th in ax R n tio y m a er d b Op ite Lim 100 0.2 0.1 100µs 10 0.05 -1 10 0.02 1ms 1 Zth=k Rthj-c δ=tp/τ 0.01 10ms Tj=175°C Single pulse Tc=25°C Single pulse 0.1 0.1 Figure 4. tp τ -2 10 1 10 -5 10 VDS(V) Output characteristics -4 Figure 5. tp (s) 10 Transfer characteristics AM08617v1 ID (A) VGS=10V 350 350 VDS=2V 7V 300 300 250 250 200 200 150 6V 100 150 100 50 Figure 6. -1 10 10 AM08616v1 ID (A) 0 0 -2 -3 10 50 5V 1 2 4 3 5 6 7 8 VDS(V) Normalized BVDSS vs temperature AM08618v1 BVDSS (norm) ID=1mA 0 0 Figure 7. 1 2 3 4 5 6 7 8 9 VGS(V) Static drain-source on resistance for H²PAK RDS(on) (Ω) AM08626v1 VGS=10V 4.2 1.10 4.1 1.05 4.0 3.9 1.00 3.8 0.95 0.90 -75 6/15 3.7 3.6 -25 25 75 125 175 TJ(°C) Doc ID 019060 Rev 1 0 20 40 60 80 100 120 140 160 180 ID(A) STH180N10F3-2 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM08620v1 VGS (V) VDD=50V ID=120A 12 Capacitance variations AM08621v1 C (pF) 20000 10 15000 8 6 10000 Ciss 4 5000 Crss 2 0 0 20 40 60 80 100 120 140 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM08622v1 VGS(th) (norm) 0 0 Coss 20 40 60 80 100 VDS(V) Figure 11. Normalized on resistance vs temperature AM08623v1 RDS(on) (norm) ID=250µA ID=60A VGS=10V 2.1 1.3 1.9 1.1 1.7 1.5 0.9 1.3 0.7 1.1 0.9 0.5 0.7 0.3 -75 25 -25 75 125 175 TJ(°C) 0.5 -75 -25 25 75 125 175 TJ(°C) Figure 12. Source-drain diode forward characteristics AM08624v1 VSD (V) 1.0 TJ=-55°C 0.9 0.8 TJ=25°C 0.7 0.6 0.5 TJ=175°C 0.4 0 20 40 60 80 100 120 ISD(A) Doc ID 019060 Rev 1 7/15 Test circuits 3 STH180N10F3-2 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 Doc ID 019060 Rev 1 10% AM01473v1 STH180N10F3-2 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. H²PAK-2 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 - L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° Doc ID 019060 Rev 1 9/15 Package mechanical data STH180N10F3-2 Figure 19. H²PAK-2 drawing 8159712_C 10/15 Doc ID 019060 Rev 1 STH180N10F3-2 Package mechanical data Figure 20. H²PAK-2 recommended footprint 8159712_C Doc ID 019060 Rev 1 11/15 Packaging mechanical data 5 STH180N10F3-2 Packaging mechanical data Table 9. H²PAK-2 tape and reel mechanical data Tape Reel mm mm Dim. 12/15 Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 019060 Rev 1 Max. 330 13.2 26.4 30.4 STH180N10F3-2 Packaging mechanical data Figure 21. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 019060 Rev 1 13/15 Revision history 6 STH180N10F3-2 Revision history Table 10. 14/15 Document revision history Date Revision 18-Jul-2011 1 Changes First version. Doc ID 019060 Rev 1 STH180N10F3-2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 019060 Rev 1 15/15