stgw50hf65sd stgwt50hf65sd

STGW50HF65SD
STGWT50HF65SD
60 A, 650 V, very low drop IGBT
with soft and fast recovery diode
Datasheet - preliminary data
Features
 Very low on-state voltage drop
 Low switching off
 High current capability
2
 Very soft Ultrafast recovery antiparallel diode
3
3
1
2
1
Applications
 PV inverter
TO-247
 UPS
TO-3P
Description
Figure 1. Internal schematic diagram
The very low drop IGBT is developed using an
advanced planar technology, resulting in a device
with extremely low on-state voltage and limited
turn-off losses. The overall performance of this
IGBT makes it ideal for low frequency switches in
mixed-frequency topologies for power factors 1.
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW50HF65SD
GW50HF65SD
TO-247
Tube
STGWT50HF65SD
GW50HF65SD
TO-3P
Tube
March 2013
DocID024411 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13
Electrical ratings
1
STGW50HF65SD, STGWT50HF65SD
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Value
Unit
Collector-emitter voltage (VCE = 0)
650
V
IC
(1)
Continuous collector current at TC = 25 °C
110
A
IC
(1)
Continuous collector current at TC = 100 °C
60
A
ICL (2)
Turn-off latching current
60
A
(3)
Pulsed collector current
130
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
284
W
Diode RMS forward current at TC = 25 °C
30
A
Surge non repetitive forward current tp = 10 ms
sinusoidal
120
A
- 55 to 150
°C
ICP
IF
IFSM
Tj
1.
Parameter
Operating junction temperature
Calculated according to the iterative formula:
T j  max  – T C
I C  T C  = ------------------------------------------------------------------------------------------------------R thj – c  V CE  sat   max   T j  max  I C  T C  
2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 , VGE=15 V
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3. Thermal data
Symbol
2/13
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case IGBT
0.44
°C/W
Rthj-case
Thermal resistance junction-case diode
1.25
°C/W
Rthj-amb
Thermal resistance junction-ambient
50
°C/W
DocID024411 Rev 1
STGW50HF65SD, STGWT50HF65SD
2
Electrical characteristics
Electrical characteristics
TJ = 25°C unless otherwise specified
Table 4. Static
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
VCE(sat)
IC = 1 mA
Gate threshold voltage
VCE = VGE, IC = 250 µA
ICES
Collector cut-off current
(VGE = 0)
VCE = 650 V
VCE = 650 V, TJ = 125 °C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
Typ.
Max.
650
1.45
1.05
3.5
Forward transconductance VCE = 15 V, IC = 30 A
Unit
V
1.15
VGE = 15 V, IC = 30 A
Collector-emitter saturation
VGE = 15 V, IC = 30 A,
voltage
TJ = 125 °C
VGE(th)
gfs
Min.
V
V
5.7
V
50
500
µA
µA
± 100
nA
25
S
Table 5. Dynamic
Symbol
Parameter
Test conditions
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 480 V,
IC = 30 A,VGE = 15 V
DocID024411 Rev 1
Min.
Typ.
Max.
Unit
-
4300
400
100
-
pF
pF
pF
-
200
27
90
-
nC
nC
nC
3/13
Electrical characteristics
STGW50HF65SD, STGWT50HF65SD
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 30 A
RG= 10 , VGE= 15 V,
(see Figure 14)
-
50
20
1280
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 400 V, IC = 30 A
RG= 10 , VGE = 15 V,
TJ = 125 °C (see Figure 14)
-
47
22
1100
-
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 30 A
RG= 10 , VGE= 15 V,
(see Figure 14)
-
370
220
465
-
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 400 V, IC = 30 A
RG= 10 , VGE= 15 V,
TJ = 125 °C (see Figure 14)
-
700
250
800
-
ns
ns
ns
Min.
Typ.
Max.
Unit
Table 7. Switching energy (inductive load)
Symbol
1.
Parameter
Test conditions
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 30 A
RG= 10 , VGE= 15 V,
(see Figure 14)
-
0.25
4.2
4.45
-
mJ
mJ
mJ
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 400 V, IC = 30 A
RG= 10 , VGE= 15 V,
TJ = 125 °C (see Figure 14)
-
0.45
7.8
8.25
-
mJ
mJ
mJ
Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 14. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25°C and 125°C).
2. Turn-off losses include also the tail of the collector current.
Table 8. Collector-emitter diode
Symbol
4/13
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 30 A
IF = 30 A, TJ = 125 °C
-
2.8
1.8
-
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A, VR = 50 V,
di/dt = 100 A/µs
(see Figure 17)
-
67
140
4
-
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A, VR = 50 V,
TJ = 125 °C,
di/dt = 100 A/µs
(see Figure 17)
-
103
390
7
-
ns
nC
A
DocID024411 Rev 1
STGW50HF65SD, STGWT50HF65SD
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2. Output characteristics
Figure 3. Transfer characteristics
AM0922v1
IC(A)
AM09222v1
IC (A)
VGE=15V
VGE=11V
120
100
120
100
VGE=10V
80
80
60
60
40
40
VGE=8V
20
0
0
1
2
3
20
0
0
VCE(V)
Figure 4. Collector-emitter on voltage vs
temperature
AM08877v1
VCE(sat)
(V)
1.5
VCE=10V
2
4
8
6
VGE(V)
10
Figure 5. Collector-emitter on voltage vs
collector current
AM08878v1
VCE(sat)
(V)
VGE=15V
1.7
1.4
IC=60A
1.5
VGE=15V
1.3
1.3
TJ=-50°C
1.2
1.1
1.1
TJ=25°C
1.0
IC=30A
0.9
0.9
IC=15A
0.7
TJ=125°C
0.5
0
20
0.8
-50
0
50
100
TJ(°C)
Figure 6. Breakdown voltage vs temperature
AM08879v1
V(BR)CES
(V)
40
60
80
IC(A)
Figure 7. Gate threshold voltage vs temperature
AM08880v1
VGE(th)
(norm)
VGE=VCE
IC = 1 mA
1.1
1.10
IC=250µA
1.0
1.05
0.9
1.00
0.8
0.95
0.90
-50
0.7
0
50
100
TJ(°C)
0.6
-50
DocID024411 Rev 1
0
50
100
TJ(°C)
5/13
Electrical characteristics
STGW50HF65SD, STGWT50HF65SD
Figure 8. Gate charge vs gate-emitter voltage
AM08881v1
VGE
(V)
Figure 9. Capacitance variations
AM08882v1
C
(pF)
Cies
VCC=480V
IC=30A
16
1000
12
f=1MHz
VGE=0
8
Coes
100
4
Cres
0
0
80
40
120
10
160
200
0.1
Qg(nC)
1
100
10
VCE(V)
Figure 10. Switching losses vs collector current Figure 11. Switching losses vs gate resistance
AM08883v1
E (µJ)
AM08884v1
E (µJ)
Eoff
VCC=400V, IC=30A
VGE=15V, TJ=125°C
Eoff
VCC=400V, RG=10Ω
VGE=15V, TJ=125°C
1000
1000
Eon
Eon
100
5
15
10
20
25
IC(A)
Figure 12. Switching losses vs temperature
AM08885v1
E (µJ)
100
0
40
20
60
80
RG(Ω)
Figure 13. Emitter-collector diode
characteristics
AM08887v1
IF
(A)
Eoff
TJ =25°C
typical values
30
VCC=400V, IC=30A
VGE=15V, RG=10Ω
1000
20
Eon
100
25
6/13
TJ =125°C
typical values
10
50
75
100
TJ(°C)
0
0
DocID024411 Rev 1
TJ =125°C
maximum values
1
2
3
4
VF(V)
STGW50HF65SD, STGWT50HF65SD
3
Test circuits
Test circuits
Figure 14. Test circuit for inductive load
switching
Figure 15. Gate charge test circuit
AM01504v1
Figure 16. Switching waveform
AM01505v1
Figure 17. Diode recovery time waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ta
tb
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
VF
dv/dt
AM01506v1
DocID024411 Rev 1
AM01507v1
7/13
Package mechanical data
4
STGW50HF65SD, STGWT50HF65SD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 9. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
8/13
Max.
5.60
18.50
P
3.55
3.65
R
4.50
5.50
S
5.30
5.50
DocID024411 Rev 1
5.70
STGW50HF65SD, STGWT50HF65SD
Package mechanical data
Figure 18. TO-247 drawing
0075325_G
DocID024411 Rev 1
9/13
Package mechanical data
STGW50HF65SD, STGWT50HF65SD
Table 10. TO-3P mechanical data
mm.
Dim
Min.
Max.
A
4.60
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1
1.20
b1
1.80
2.20
b2
2.80
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
E
5
13.90
15.40
15.80
E1
13.60
E2
9.60
e
5.15
5.45
5.75
L
19.50
20
20.50
L1
10/13
Typ.
3.50
L2
18.20
øP
3.10
18.40
3.30
Q
5
Q1
3.80
DocID024411 Rev 1
18.60
STGW50HF65SD, STGWT50HF65SD
Package mechanical data
Figure 19. TO-3P drawing
8045950_A
DocID024411 Rev 1
11/13
Revision history
5
STGW50HF65SD, STGWT50HF65SD
Revision history
Table 11. Document revision history
12/13
Date
Revision
21-Mar-2013
1
Changes
Initial release.
DocID024411 Rev 1
STGW50HF65SD, STGWT50HF65SD
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13/13