STGW30N120KD 30 A - 1200 V - short circuit rugged IGBT Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 2 3 1 Application ■ TO-247 Motor control Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGW30N120KD GW30N120KD TO-247 Tube June 2008 Rev 2 1/13 www.st.com 13 Contents STGW30N120KD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 9 STGW30N120KD 1 Electrical ratings Electrical ratings Table 2. Symbol Parameter Value Unit 1200 V VCES Collector-emitter voltage (VGE = 0) IC (1) Collector current (continuous) at 25 °C 60 A IC (1) Collector current (continuous) at 100 °C 30 A ICL (2) Turn-off latching current 100 A ICP (3) Pulsed collector current 100 A VGE Gate-emitter voltage ±25 V tscw Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125 °C, RG = 10 Ω, VGE = 12 V 10 µs PTOT Total dissipation at TC = 25 °C 175 W Diode RMS forward current at TC = 25 °C 30 A Surge non repetitive forward current tp = 10 ms sinusoidal 100 A – 55 to 125 °C Value Unit IF IFSM Tj 1. Absolute maximum ratings Operating junction temperature Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case IGBT max. 0.57 °C/W Rthj-case Thermal resistance junction-case diode max. 1.6 °C/W Rthj-amb Thermal resistance junction-ambient IGBT max. 50 °C/W 3/13 Electrical characteristics 2 STGW30N120KD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Static Parameter Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) IC = 1 mA Gate threshold voltage VCE= VGE, IC= 1mA ICES Collector cut-off current (VGE = 0) VCE =1200 V IGES Gate-emitter leakage current (VCE = 0) VGE =± 20 V Forward transconductance VCE = 25 V, IC= 20 A Table 5. Symbol Cies Coes Cres Qg Qge Qgc Min. Typ. Max. 1200 VGE= 15 V, IC= 20 A Collector-emitter saturation VGE= 15 V, IC= 20 A, voltage Tc =125 °C VGE(th) gfs 4/13 Test conditions Unit V 2.8 3.85 2.7 4.5 VCE =1200 V, Tc=125 °C V V 6.5 V 500 10 µA mA ± 100 nA 20 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE=0 VCE = 960 V, IC= 20 A,VGE=15 V Min. Typ. Max. Unit 2520 170 33 pF pF pF 105 21 56 nC nC nC STGW30N120KD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Eon (1) Eoff (2) Ets Eon (1) Eoff (2) Ets 1. Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A Min. RG= 10 Ω, VGE= 15 V, (see Figure 17) RG= 10 Ω, VGE= 15 V, Tc= 125 °C (see Figure 17) RG= 10 Ω, VGE= 15 V, (see Figure 17) RG= 10 Ω, VGE= 15 V, Tc= 125 °C (see Figure 17) Typ. Max. Unit 36 22 840 ns ns A/µs 35 22 760 ns ns A/µs 70 251 260 ns ns ns 140 324 432 ns ns ns Switching energy (inductive load) Parameter Test conditions Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A Min. RG= 10 Ω, VGE= 15 V, (see Figure 17) RG= 10 Ω, VGE= 15 V, Tc= 125 °C (see Figure 17) Typ. Max. Unit 2.4 4.3 6.8 mJ mJ mJ 3.9 5.8 9.7 mJ mJ mJ Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 8. Symbol Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 20 A IF = 20 A, TC = 125 °C 1.9 1.7 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 20 A, VR = 45 V, di/dt = 100 A/µs (see Figure 20) 84 235 5.6 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 20 A, VR = 45 V, Tc = 125 °C, di/dt = 100 A/µs (see Figure 20) 152 722 9 ns nC A 5/13 Electrical characteristics 2.1 STGW30N120KD Electrical characteristics (curves) Figure 2. Output characteristics HV41160 IC(A) Figure 3. Transfer characteristics HV41165 IC(A) VGE=15V 120 120 14V VCE = 25V 90 90 13V 60 60 12V 11V 30 10V 0 0 -5 5 10 15 20 25 30 VCE(V) 0 0 3 6 9 12 VGE (V) Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs. temperature Figure 6. Gate charge vs. gate-source voltage Figure 7. Capacitance variations VGE (V) 16 HV41190 VCE =960V IC =20A 12 8 4 0 6/13 30 0 20 40 60 80 100 Qg(nC) STGW30N120KD Figure 8. Electrical characteristics Normalized gate threshold voltage vs. temperature Figure 9. Collector-emitter on voltage vs. collector current Figure 10. Normalized breakdown voltage vs. temperature Figure 11. Switching losses vs. temperature Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current HV41260 E (µJ) 4000 Eoff VCC = 780V VGE = 15V RG = 10Ω TJ = 125˚C 3000 Eon 2000 1000 0 0 5 10 15 20 IC (A) 7/13 Electrical characteristics STGW30N120KD Figure 14. Thermal Impedance Figure 15. Turn-off SOA Figure 16. Forward voltage drop vs forward current IFM(A) 100 90 Tj=150°C (typical values) 80 70 60 50 Tj=25°C (maximum values) 40 Tj=150°C (maximum values) 30 20 10 VFM(V) 0 0.0 8/13 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 STGW30N120KD 3 Test circuit Test circuit Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit Figure 19. Switching waveform Figure 20. Diode recovery time waveform 9/13 Package mechanical data 4 STGW30N120KD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW30N120KD Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Typ Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 11/13 Revision history 5 STGW30N120KD Revision history Table 9. 12/13 Document revision history Date Revision Changes 29-Jan-2008 1 Initial release 18-Jun-2008 2 Update values in Table 2 STGW30N120KD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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