STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH™ IGBT General features IC VCE(sat) (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A ■ ■ ■ Low on-voltage drop (Vcesat) 3 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) D²PAK 1 2 TO-220 Very soft ultra fast recovery antiparallel diode Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop. Internal schematic diagram Applications ■ High frequency motor controls ■ Smps and pfc in both hard switch and resonant topologies ■ Motor drivers Order codes Part Number Marking Package Packaging STGB10NC60HD GB10NC60HD D²PAK Tape & reel STGP10NC60HD GP10NC60HD TO-220 Tube February 2007 Rev 3 1/15 www.st.com 15 Electrical ratings 1 STGB10NC60HD - STGP10NC60HD Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at TC = 25°C 20 A IC(1) Collector current (continuous) at TC = 100°C 10 A ICL(2) Collector current (pulsed) 40 A Diode RMS forward current at TC = 25°C 10 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25°C 60 W Tstg Storage temperature – 55 to 150 °C Value Unit IF Tj Operating junction temperature 1. Calculated according to the iterative formula:: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp=480V, Tj=150°C, RG=10Ω, VGE=15V Table 2. Symbol 2/15 Thermal resistance Parameter Rthj-case Thermal resistance junction-case max 2.08 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W STGB10NC60HD - STGP10NC60HD 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation VGE= 15V, IC= 5A voltage VGE= 15V, IC= 5A, Tc= 125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C IGES gfs Table 4. Symbol Cies Coes Cres Qg Qge Qgc Test conditions IC= 1mA, VGE= 0 Min. Typ. Max. 600 Unit V 1.9 1.7 2.5 V V 5.75 V VCE=Max rating,TC= 125°C 150 1 µA mA Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA Forward transconductance VCE = 15V, IC= 5A 3.75 3.5 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 5A, VGE = 15V, (see Figure 17) Min. Typ. Max. Unit 365 43 8.3 pF pF pF 19.2 4.5 7 nC nC nC 3/15 Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets STGB10NC60HD - STGP10NC60HD Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions Min. VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 16) VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, Tj=125°C (see Figure 16) Vcc = 390V, IC = 5A, RGE = 10Ω, VGE = 15V,TJ=25°C (see Figure 16) Vcc = 390V, IC = 5A, RGE=10Ω, VGE =15V, Tj=125°C (see Figure 16) Typ. Max. Unit 14.2 5 1000 ns ns A/µs 14 5 920 ns ns A/µs 27 72 85 ns ns ns 50 108 139 ns ns ns Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 5A RG= 10Ω, VGE=15V, Tj=25°C (see Figure 16) VCC = 390V, IC = 5A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 16) Min. Typ. Max. Unit 31.8 95 126.8 µJ µJ µJ 61.8 173 234.8 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 4/15 STGB10NC60HD - STGP10NC60HD Table 7. Symbol Electrical characteristics Collector-emitter diode Parameter Test conditions If = 2.5A Vf Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Tj = 25°C, di/dt = 100 A/µs (see Figure 19) Reverse recovery time Reverse recovery charge Reverse recovery current Tj =125°C, di/dt = 100A/µs (see Figure 19) Qrr Irrm trr Qrr Irrm If = 2.5A, Tj = 125°C If = 5A,VR = 40V, If = 5A,VR = 40V, Min. Typ. Max. Unit 1.75 1.3 2.1 V V 21.5 14.2 1.32 ns nC A 33 30.5 1.85 ns nC A 5/15 Electrical characteristics STGB10NC60HD - STGP10NC60HD 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. 6/15 Capacitance variations STGB10NC60HD - STGP10NC60HD Electrical characteristics Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/15 Electrical characteristics Figure 13. Thermal Impedance Figure 15. Emitter-collector diode characteristics 8/15 STGB10NC60HD - STGP10NC60HD Figure 14. Turn-off SOA STGB10NC60HD - STGP10NC60HD 3 Test circuit Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform 9/15 Package mechanical data 4 STGB10NC60HD - STGP10NC60HD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STGB10NC60HD - STGP10NC60HD Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/15 Package mechanical data STGB10NC60HD - STGP10NC60HD D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 10.4 0.393 4.88 5.28 0.192 0.208 E1 G 0.368 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 12/15 STGB10NC60HD - STGP10NC60HD 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 13/15 Revision history 6 STGB10NC60HD - STGP10NC60HD Revision history Table 8. 14/15 Revision history Date Revision Changes 30-Jan-2006 1 Initial release. 06-Nov-2006 2 Complete version 08-Feb-2007 3 The document has been reformatted STGB10NC60HD - STGP10NC60HD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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