Single P-channel MOSFET ELM34409AA-N ■General description ■Features ELM34409AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-9A Rds(on) < 20mΩ (Vgs=-10V) Rds(on) < 35mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Tc=70°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V Junction and storage temperature range Vgs ±25 V Id -9 -7 A Idm Ias Eas -50 -26 34 A A mJ Pd Tj, Tstg 2.5 1.6 -55 to 150 3 W °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. 25 Unit °C/W 50 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 SOURCE SOURCE 4 5 GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM34409AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V,Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±25V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS -1.0 9 -1.5 Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr μA ±100 nA -3.0 V A 1 mΩ 1 -1.2 S V 1 1 -2.1 A Vgs=-10V, Id=-9A 15 20 Vgs=-4.5V, Id=-7A 25 35 Vds=-10V, Id=-9A If=-1A, Vgs=0V 24 Is Input capacitance Output capacitance Turn-off fall time V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Gfs Vsd -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=-15V, f=1MHz 1610 410 pF pF Vgs=15mV, Vds=0V, f=1MHz 200 3.7 pF Ω 31.4 4.5 nC nC 2 2 8.2 5.7 nC ns 2 2 10.0 ns 2 18.0 ns 2 5.0 ns 2 Vgs=-10V, Vds=-15V Id=-9A Vgs=-10V, Vds=-15V td(off) Id=-1A, RL=1Ω, Rgen=6Ω tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4-2 Single P-channel MOSFET ELM34409AA-N electrical ■Typical and thermal characteristics � � � � � � 4-3 Single P-channel MOSFET ELM34409AA-N � � �� �� � � � �� �� � 4-4