Single P-channel MOSFET ELM33415CA-S ■General description ■Features ELM33415CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3.5A Rds(on) < 51mΩ (Vgs=-4.5V) Rds(on) < 61mΩ (Vgs=-2.5V) Rds(on) < 71mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Symbol Vds Vgs Limit -20 ±8 Unit V V Id -3.5 -2.8 A Idm Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range -21 1.0 0.6 Pd Tj, Tstg Note A 3 W -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. Unit 120 °C/W ■Circuit SOT-23(TOP VIEW) 3 1 Note 2 D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single P-channel MOSFET ELM33415CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Vgs=0V, Id=-250μA -20 Zero gate voltage drain current Idss Vds=-16V, Vgs=0V Vds=-10V, Vgs=0V, Tj=70°C Gate-body leakage current Igss Vds=0V, Vgs=±8V Gate threshold voltage On state drain current Static drain-source on-resistance Ta=25°C Typ. Max. Unit Note V -1 -10 μA ±100 nA -0.45 -0.60 -0.90 -21 V A Vgs=-4.5V, Id=-3.5A 40 51 mΩ Rds(on) Vgs=-2.5V, Id=-3.5A Vgs=-1.8V, Id=-2.0A 48 60 61 71 mΩ mΩ 1 S 1 V A 1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Forward transconductance Gfs Vds=-5V, Id=-3.5A Diode forward voltage Max. body-diode continuous current Vsd Is If=-3.5A, Vgs=0V DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-10V, f=1MHz 1180 185 pF pF Crss 117 pF 16.7 nC 2 1.8 4.6 20 nC nC ns 2 2 2 36 45 ns ns 2 2 62 30 14 ns ns nC 2 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Qg Vgs=-4.5V, Vds=-10V Id=-3.5A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-4.5V, Vds=-10V td(off) Id≈-3.5A, Rgen=3.3Ω Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge tf trr Qrr If=-3.5A, dl/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 17 1 -1.3 -3.5 Single P-channel MOSFET ELM33415CA-S ■Typical electrical and thermal characteristics � � � � � � 4-3 Single P-channel MOSFET ELM33415CA-S � � �� �� � � � � � 4-4