ELM-TECH ELM33415CA-S

Single P-channel MOSFET
ELM33415CA-S
■General description
■Features
ELM33415CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-20V
Id=-3.5A
Rds(on) < 51mΩ (Vgs=-4.5V)
Rds(on) < 61mΩ (Vgs=-2.5V)
Rds(on) < 71mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Symbol
Vds
Vgs
Limit
-20
±8
Unit
V
V
Id
-3.5
-2.8
A
Idm
Ta=25°C
Ta=70°C
Power dissipation
Junction and storage temperature range
-21
1.0
0.6
Pd
Tj, Tstg
Note
A
3
W
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
Unit
120
°C/W
■Circuit
SOT-23(TOP VIEW)
3
1
Note
2
D
Pin No.
1
2
Pin name
GATE
SOURCE
3
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM33415CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
Min.
BVdss Vgs=0V, Id=-250μA
-20
Zero gate voltage drain current
Idss
Vds=-16V, Vgs=0V
Vds=-10V, Vgs=0V, Tj=70°C
Gate-body leakage current
Igss
Vds=0V, Vgs=±8V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Ta=25°C
Typ. Max. Unit Note
V
-1
-10
μA
±100
nA
-0.45 -0.60 -0.90
-21
V
A
Vgs=-4.5V, Id=-3.5A
40
51
mΩ
Rds(on) Vgs=-2.5V, Id=-3.5A
Vgs=-1.8V, Id=-2.0A
48
60
61
71
mΩ
mΩ
1
S
1
V
A
1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Forward transconductance
Gfs
Vds=-5V, Id=-3.5A
Diode forward voltage
Max. body-diode continuous current
Vsd
Is
If=-3.5A, Vgs=0V
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=-10V, f=1MHz
1180
185
pF
pF
Crss
117
pF
16.7
nC
2
1.8
4.6
20
nC
nC
ns
2
2
2
36
45
ns
ns
2
2
62
30
14
ns
ns
nC
2
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Qg
Vgs=-4.5V, Vds=-10V
Id=-3.5A
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Vgs=-4.5V, Vds=-10V
td(off) Id≈-3.5A, Rgen=3.3Ω
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
tf
trr
Qrr
If=-3.5A, dl/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
17
1
-1.3
-3.5

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Single P-channel MOSFET
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Single P-channel MOSFET

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ELM33415CA-S
 
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