JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU4828 N-Channel MOSFET TO-252-2L 1. GATE DESCRIPTION 2. DRAIN The CJU4828 uses advanced trench technology to provide excellent 3. SOURCE RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Units Drain-Source Voltage VDS 60 V Gate-Source Voltage V VGS ±20 Continuous Drain Current (t ≤10s) (note 1) ID 4.5 Power Dissipation PC 1.25 W RθJA 100 ℃/W PC 12.5 W RθJC 10 ℃/W IAR,IAS 19 A EAR,EAS 18 mJ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient (t ≤10s) (note 1) Power Dissipation (TC=25℃) Thermal Resistance from Junction to Case (t ≤10s) (note 1) Avalanche Current (note 2) Repetitive Avalenche Energy 0.1mH (note 2) A A,May,2012 B,May,2012 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =60V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) 60 V 1 µA ±100 nA 3 V VGS =10V, ID =4.5A 56 mΩ VGS =4.5V, ID =3A 77 mΩ Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A Diode forward voltage (note 3) VSD IS=1A, VGS = 0V 1 4 S 1 V 540 pF DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 60 pF Crss 25 pF td(on) 4.7 ns VDS =30V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time tr VGS=10V,VDS=30V, 2.3 ns td(off) RL=6.7Ω,RGEN=3Ω 15.7 ns 1.9 ns Turn-off fall time tf Total Gate Charge (10V) Qg Total Gate Charge (4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =30V,VGS =10V,ID =4.5A 10.5 nC 5.5 nC 1.6 nC 2.2 nC Notes : 1. The value in any given application depends on the user’s specific board design. 2. Repetitive rating : Pulse width limited by junction temperature. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. These parameters have no way to verify. A,May,2012 B,May,2012 Typical Characteristics CJU4828 Output Characteristics 20 Pulsed Transfer Characteristics 20 VGS= 5.0V VGS= 10V VDS= 5V Pulsed (A) DRAIN CURRENT ID VGS= 4.0V DRAIN CURRENT 15 VGS= 4.5V ID (A) 15 10 5 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS Ta=100℃ Ta=25℃ 5 VGS= 3.5V 0 10 0 5 0 1 (V) 2 Pulsed (mΩ) Ta=25℃ Pulsed 150 RDS(ON) (mΩ) Ta=25℃ ON-RESISTANCE RDS(ON) ON-RESISTANCE 5 (V) 200 150 100 ID= 4.5A 50 0 2 4 6 8 GATE TO SOURCE VOLTAGE VGS VGS= 4.5V 100 VGS= 10V 50 0 10 0 5 10 DRAIN CURRENT (V) ID 15 20 1.0 1.2 (A) IS —— VSD Threshold Voltage 2.0 20 10 Ta=25℃ Pulsed IS (A) 1.9 VTH (V) 4 VGS RDS(ON) —— ID RDS(ON) —— VGS 200 1.8 SOURCE CURRENT THRESHOLD VOLTAGE 3 GATE TO SOURCE VOLTAGE ID= 250uA 1.7 1 0.1 1.6 1.5 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) 125 0.01 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE VSD (V) B,May,2012