PT4410 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 10.5mΩ RDS(ON), [email protected], Ids@12A = 15mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions D D D D 8 7 6 5 1 2 S S REF. A B C D E F 3 4 S G Millimeter Min. Max. REF. Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 6.20 5.00 4.00 8° 0.90 M H L J K 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 0.19 0.25 G 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 12 IDM 48 Continuous Drain Current Pulsed Drain Current o TA = 25 C Maximum Power Dissipation o TA = 75 C PD Unit V A 2.5 W 1.2 TJ, Tstg -55 to 150 Avalanche Energy with Single Pulse EAS 150 Junction-to-Case Thermal Resistance RθJC 25 Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 50 Operating Junction and Storage Temperature Range o C mJ o C/W １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PT4410 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 12A 11.0 15.0 Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 12A 8.5 10.5 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 1.8 3 V 1 uA ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V Gate Body Leakage IGSS VGS = ± 20V, VDS = 0V Forward Transconductance gfs VDS = 15V, ID = 12A 30 1 V mΩ 64 S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, ID = 12A VGS = 5V 12 45 nC 4.5 3.6 22 35 VDD = 15V, RG = 6Ω 13 20 ID = 1A, VGS = 10V 82 125 30 45 VDS = 15V, VGS = 0V f = 1.0 MHz ns 1180 pF 270 145 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 2A, VGS = 0V 2.0 A 1.5 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PT4410 30V N-Channel Enhancement Mode MOSFET ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５