HTSEMI PT4410

PT4410
30V N-Channel Enhancement Mode MOSFET
VDS= 30V
RDS(ON), [email protected], [email protected] = 10.5mΩ
RDS(ON), [email protected], [email protected] = 15mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
Package Dimensions
D D D D
8 7 6 5
1 2
S S
REF.
A
B
C
D
E
F
3 4
S G
Millimeter
Min.
Max.
REF.
Millimeter
Min.
Max.
5.80
4.80
3.80
0°
0.40
6.20
5.00
4.00
8°
0.90
M
H
L
J
K
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
0.19
0.25
G
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
ID
12
IDM
48
Continuous Drain Current
Pulsed Drain Current
o
TA = 25 C
Maximum Power Dissipation
o
TA = 75 C
PD
Unit
V
A
2.5
W
1.2
TJ, Tstg
-55 to 150
Avalanche Energy with Single Pulse
EAS
150
Junction-to-Case Thermal Resistance
RθJC
25
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
50
Operating Junction and Storage Temperature Range
o
C
mJ
o
C/W
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
PT4410
30V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250uA
Drain-Source On-State Resistance
RDS(on) VGS = 4.5V, ID = 12A
11.0
15.0
Drain-Source On-State Resistance
RDS(on) VGS = 10V, ID = 12A
8.5
10.5
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA
1.8
3
V
1
uA
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
Gate Body Leakage
IGSS
VGS = ± 20V, VDS = 0V
Forward Transconductance
gfs
VDS = 15V, ID = 12A
30
1
V
mΩ
64
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15V, ID = 12A
VGS = 5V
12
45
nC
4.5
3.6
22
35
VDD = 15V, RG = 6Ω
13
20
ID = 1A, VGS = 10V
82
125
30
45
VDS = 15V, VGS = 0V
f = 1.0 MHz
ns
1180
pF
270
145
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
VSD
IS = 2A, VGS = 0V
2.0
A
1.5
V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
PT4410
30V N-Channel Enhancement Mode MOSFET
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05