Dual N-channel MOSFET ELM56800EA-S ■General description ■Features ELM56800EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=30V Id=3.6A Rds(on) = 70mΩ (Vgs=10V) Rds(on) = 78mΩ (Vgs=4.5V) Rds(on) = 95mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±12 3.6 V Ta=25°C Continuous drain current(Tj=150°C) Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range A 2.2 20 2.0 A W 1.3 -55 to 150 Tj, Tstg °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Rθja ■Pin configuration SOT-26(TOP VIEW) 6 1 5 2 4 3 Typ. Max. Unit 120 °C/W Note ■Circuit Pin No. Pin name 1 2 3 GATE1 SOURCE2 GATE2 4 5 6 DRAIN2 SOURCE1 DRAIN1 5-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM56800EA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage On state drain current Static drain-source on-resistance Condition Vds=24V, Vgs=0V, Ta=85°C 30 Vds=0V, Vgs=±12V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V 0.4 30 μA ±100 nA 1.2 V A Vgs=10V, Id=3.6A 56 70 Rds(on) Vgs=4.5V, Id=3.0A 62 78 78 20 95 0.8 1.2 V 1.7 A Gfs Diode forward voltage Vsd Is=1.7A, Vgs=0V Is Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time V 1 Forward transconductance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 30 Vds=24V, Vgs=0V Vgs=2.5V, Id=2.2A Vds=10V, Id=1.6A Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=0V, Vds=15V, f=1MHz Vgs=4.5V, Vds=15V, Id=3.6A Vgs=10V, Vds=15V, Id=1A td(off) RL=15Ω, Rgen=6Ω tf 5-2 mΩ S 280 pF 40 20 pF pF 2.3 1.0 3.0 nC nC 0.6 10 15 nC ns 12 20 ns 15 25 ns 10 15 ns AFN6562 Alfa-MOS 30V N-Channel Enhancement Mode MOSFET Technology Dual N-channel MOSFET ELM56800EA-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A Mar. 2011 www.alfa-mos.com 5-3 Page 3 Alfa-MOS 30V N-Channel Enhancement Mode MOSFET Technology Dual N-channel MOSFET Typical Characteristics ELM56800EA-S ©Alfa-MOS Technology Corp. Rev.A Mar. 2011 www.alfa-mos.com Page 4 5-4 AFN6562 Alfa-MOS 30V N-Channel Enhancement Mode MOSFET Technology Dual N-channel MOSFET ELM56800EA-S Typical Characteristics ■Test circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Mar. 2011 www.alfa-mos.com 5-5 Page 5