5mm Silicon Phototransistor PT534-6B

5mm Silicon Phototransistor
PT534-6B
Features
․Fast response time
․High photo sensitivity
․Pb free
․The product itself will remain within RoHS compliant version.
Description
․PT534-6B is a high speed and high sensitive NPN silicon
phototransistor molded in a standard 5 mm package.
Due to its black epoxy the device is sensitive to visible and
near infrared radiation..
Applications
․Infrared applied system
․Camera
․Printer
․Cockroach catcher
1 Copyright
Revision
:3 ©
LifecyclePhase:
Release
Date:2013-06-04
10:05:52.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No:
DPT-0000049
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Silicon Phototransistor
PT534-6B
Device Selection Guide
Chip
Lens Color
Materials
Silicon
Black
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
30
V
Emitter-Collector-Voltage
VECO
5
V
IC
20
mA
Operating Temperature
Topr
-25 ~ +85
°C
Storage Temperature
Tstg
-40 ~ +100
°C
Lead Soldering Temperature
Power Dissipation at
(or below)
Tsol
260℃
°C
75
mW
Collector Current
Pc
25℃Free Air Temperature
Notes: *1:Soldering time≦10 seconds.
2 Copyright
Revision
:3 ©
LifecyclePhase:
Release
Date:2013-06-04
10:05:52.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No:
DPT-0000049
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Silicon Phototransistor
PT534-6B
Electro-Optical Characteristics (Ta=25℃)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Collector – Emitter
BVCEO
30
-----
-----
V
IC=100μA
2
Ee=0mW/cm
BVECO
5
-----
-----
V
IE=100μA
2
Ee=0mW/cm
Collector-Emitter
Saturation Voltage
VCE(sat)
-----
-----
0.4
V
IC=2mA
2
Ee=1mW/cm
Rise Time
tr
-----
15
-----
μS
VCE=5V
IC=1mA
RL=1000Ω
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Fall Time
tf
-----
15
-----
Collector Dark Current
ICEO
-----
-----
100
nA
On State Collector Current
IC(on)
0.7
1.2
-----
mA
Rang Of Spectral Bandwidth
λ0.5
800
-----
1100
nm
----
Wavelength of Peak Sensitivity
λP
-----
940
-----
nm
----
2
3 Copyright
Revision
:3 ©
LifecyclePhase:
Ee=0mW/cm
VCE=20V
2
Ee=1mW/cm
VCE=5V
λp=940nm
Release
Date:2013-06-04
10:05:52.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No:
DPT-0000049
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Silicon Phototransistor
PT534-6B
Typical Electro-Optical Characteristics Curves
Collector Power Dissipation vs. Ambient Temperature
Spectral Sensitivity
100
1.0
80
0.8
60
0.6
40
0.4
20
0.2
Ta=25 C
0
0
-25
25
0
50
700
75 85 100
Relative Collector Current vs. Ambient Temperature
800
900
1000 1100 1300
Collector Current vs. Irradiance
100
160
C
2
140
10
120
100
1
80
60
40
0.1
20
0
0
10
20 30
40 50
60 70
0.01
0.5
1
3
1.5
2
4 Copyright
Revision
:3 ©
LifecyclePhase:
Release
Date:2013-06-04
10:05:52.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No:
DPT-0000049
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Silicon Phototransistor
PT534-6B
Collector Dark Current vs. Ambient Temperature
Collector Current vs. Collector-Emitter Voltage
10
14
12
10
10
8
10
6
4
10
2
10
0
5 Copyright
Revision
:3 ©
LifecyclePhase:
25
50
75
100
0
0
1
2
3
4
Release
Date:2013-06-04
10:05:52.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No:
DPT-0000049
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Silicon Phototransistor
PT534-6B
Package Dimension
Note:
1.All dimensions are in millimeters
2.Tolerances unless dimensions ±0.1mm
6 Copyright
Revision
:3 ©
LifecyclePhase:
Release
Date:2013-06-04
10:05:52.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No:
DPT-0000049
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Silicon Phototransistor
PT534-6B
Label Form Specification
Pb
EVERLIGHT
CPN :
P N : XXXXXXXXXXXXX
RoHS
XXXXXXXXXXXXX
QTY : XXX
CAT : XXX
HUE : XXX
REF : XXX
‧CPN: Customer’s Product Number
‧P/N: Product Number
‧QTY: Packing Quantity
‧CAT: Luminous Intensity Rank
‧HUE: Dom. Wavelength Rank
‧REF: Forward Voltage Rank
‧LOT No: Lot Number
‧X: Month
‧Reference: Identify Label Number
LOT NO : XXXXXXXXXX
Reference : XXXXXXXX
Packing Specification
■ Anti-electrostatic bag
■ Inner Carton
■ Outside Carton
■ Packing Quantity
1. 500 PCS/1 Bag, 5 Bags/1 Inner Carton
2. 10 Inner Cartons/1 Outside Carton
7 Copyright
Revision
:3 ©
LifecyclePhase:
Release
Date:2013-06-04
10:05:52.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No:
DPT-0000049
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Silicon Phototransistor
PT534-6B
Notes
1.
Lead Forming

During lead formation, the leads should be bent at a point at least 3mm from the base of the epoxy bulb.

Lead forming should be done before soldering.

Avoid stressing the LED package during leads forming. The stress to the base may damage the LED’s characteristics or it
may break the LEDs.

Cut the LED lead frames at room temperature. Cutting the lead frames at high temperatures may cause failure of the LEDs.

When mounting the LEDs onto a PCB, the PCB holes must be aligned exactly with the lead position of the LED. If the LEDs
are mounted with stress at the leads, it causes deterioration of the epoxy resin and this will degrade the LEDs.
2.
Storage

The LEDs should be stored at 30°C or less and 70%RH or less after being shipped from Everlight and the storage life limits
are 3 months. If the LEDs are stored for 3 months or more, they can be stored for a year in a sealed container with a
nitrogen atmosphere and moisture absorbent material.

Please avoid rapid transitions in ambient temperature, especially, in high humidity environments where condensation can
occur.
3.
Soldering

Careful attention should be paid during soldering. When soldering, leave more then 3mm from solder joint to epoxy bulb,
and soldering beyond the base of the tie bar is recommended.

Recommended soldering conditions:

Hand Soldering
300℃ Max. (30W Max.)
Temp. at tip of iron
Soldering time
3 sec Max.
Distance
3mm Min.(From solder
joint to epoxy bulb)
Recommended soldering profile
Preheat temp.
Bath temp. & time
Distance
DIP Soldering
100℃ Max. (60 sec Max.)
260 Max., 5 sec Max
3mm Min. (From solder
joint to epoxy bulb)
laminar wave
Fluxing
Prehead

Avoiding applying any stress to the lead frame while the LEDs are at high temperature particularly when soldering.

Dip and hand soldering should not be done more than one time
8 Copyright
Revision
:3 ©
LifecyclePhase:
Release
Date:2013-06-04
10:05:52.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No:
DPT-0000049
www.everlight.com
Expired Period: Forever
DATASHEET
5mm Silicon Phototransistor
PT534-6B

After soldering the LEDs, the epoxy bulb should be protected from mechanical shock or vibration until the LEDs return to
room temperature.

A rapid-rate process is not recommended for cooling the LEDs down from the peak temperature.
Although the recommended soldering conditions are specified in the above table, dip or hand soldering at the lowest
possible temperature is desirable for the LEDs.

Wave soldering parameter must be set and maintain according to recommended temperature and dwell time in the solder
wave.
4.
Cleaning

When necessary, cleaning should occur only with isopropyl alcohol at room temperature for a duration of no more than
one minute. Dry at room temperature before use.

Do not clean the LEDs by the ultrasonic. When it is absolutely necessary, the influence of ultrasonic cleaning on the LEDs
depends on factors such as ultrasonic power and the assembled condition. Ultrasonic cleaning shall be pre-qualified to
ensure this will not cause damage to the LED
5.
Heat Management

Heat management of LEDs must be taken into consideration during the design stage of LED application. The current
should be de-rated appropriately by referring to the de-rating curve found in each product specification.

The temperature surrounding the LED in the application should be controlled. Please refer to the data sheet de-rating
curve.
6.
ESD (Electrostatic Discharge)

Electrostatic discharge (ESD) or surge current (EOS) can damage LEDs.

An ESD wrist strap, ESD shoe strap or antistatic gloves must be worn whenever handling LEDs.

All devices, equipment and machinery must be properly grounded.

Use ion blower to neutralize the static charge which might have built up on surface of the LEDs plastic lens as a result of
friction between LEDs during storage and handing.
7.
Other

Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above
specification.

When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these
specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does
not comply
with the absolute maximum ratings and the instructions included in these specification sheets.

These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t
reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.
9 Copyright
Revision
:3 ©
LifecyclePhase:
Release
Date:2013-06-04
10:05:52.0
2010, Everlight All Rights Reserved. Release Date : May.28.2013. Issue No:
DPT-0000049
www.everlight.com
Expired Period: Forever