PM75B4L1C060 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Photo Voltaic IPM H-Bridge 75 Amperes/600 Volts A D F E 1 5 N G G G G G G G G G G G G G G F F F 9 M P 13 J B H (2 TYP.) C K B P N L U Q W L L F V R L L T S (19 TYP.) TERMINAL CODE C 1 VUPC V U 2 UFO 3 UP 4 VUP1 5 VVPC VVPC VFO NC FO VNC NC VN1 NC NC NC NC UN VN VUPC VP VVP1 UFO UP VUP1 6 VFO 7 VP 8 VVP1 9 NC 1.5k 1.5k 1.5k 10 NC VCC IN FO SI OUT IN FO VCC OT GND GND OT SI OUT GND GND IN FO VCC SI OUT OT GND GND IN FO VCC SI OUT GND GND 11 NC OT 12 NC 13 VNC 14 VN1 15 NC 16 UN 17 VN 18 NC 19 FO B N W V U P Outline Drawing and Circuit Diagram Dim. A B C D E F G H J K Inches 3.54 1.97 0.98 3.15 0.20 0.39 0.08 0.17 Dia. 0.81 0.91 Millimeters 90.0 50.0 25.0 80.0 5.0 10.0 2.0 4.3 Dia. 20.5 23.0 Dim. L M N P Q R S T U V Inches 0.47 0.012 0.57 0.26 0.02 0.56 0.02 Sq. 0.08 0.51 0.65 Millimeters 12.0 0.3 14.6 6.7 0.5 14.2 0.5 Sq. 2.0 13.0 16.5 Description: Powerex Intellimod™ Photo Voltaic Intelligent Power Modules are isolated base modules designed for single phase power switching applications. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Features: £ Complete Output Power Circuit £ Gate Drive Circuit £ Protection Logic –Short Circuit –Over Temperature Using On-chip Temperature Sensing –Under Voltage £ Low Loss Using Full Gate CSTBT IGBT Chip Applications: £ PV Inverters £ PV UPS £ PV Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM75B4L1C060 is a 600V, 75 Ampere PV-IPM. Type Current Rating Amperes VCES Volts (x 10) PM75 60 03/11 Rev. 0 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com PM75B4L1C060 Photo Voltaic IPM H-Bridge 75 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Power Device Junction Temperature Storage Temperature Mounting Torque, M4 Mounting Screws (Typical) Module Weight (Typical) SymbolPM75B4L1C060Units Tj -20 to 150 °C Tstg -40 to 125 °C — 15 in-lb — 135 Grams Supply Voltage, Surge (Applied between P-N) VCC(surge)500 Volts Operation of Short Circuit Protections VCC(prot.)450 Volts (Applied between P-N, VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start) Isolation Voltage (60Hz, Sinusoidal, RMS, Charged Part to Base, AC 1 Minute) VISO 2500Volts Inverter Part Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current (TC = 25°C) Collector Current (Pulse) Total Power Dissipation (TC = 25°C) Emitter Current (TC = 25°C, FWDi Current) Emitter Current (Pulse, FWDi Current) VCES 600Volts IC 75Amperes ICRM 150Amperes Ptot 201Watts IE 75Amperes IERM 150Amperes Control Part Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VN1-VNC)VD 20Volts Input Voltage (Applied between UP-VUPC, VP-VVPC, UN- VN- WN-Br-VNC)VCIN 20Volts Fault Output Supply Voltage VFO 20Volts (Applied between UFO-VUPC, VFO-VVPC, FO-VNC) Fault Output Supply Current (Sink Current at UFO, VFO, FO Terminals)IFO 20mA 2 03/11 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com PM75B4L1C060 Photo Voltaic IPM H-Bridge 75 Amperes/600 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units VCE(sat) VD = 15V, IC = 75A, VCIN = 0V, — 2.2 2.7 Volts — 2.2 2.7 Volts — 2.4 3.3 Volts Inverter Part Collector-Emitter Saturation Voltage Pulsed, Tj = 25°C VD = 15V, IC = 75A, VCIN = 0V, Pulsed, Tj = 125°C Emitter-Collector Voltage Switching Times VEC ton trr Collector-Emitter Cutoff Current IE = 75A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0 ↔ 15V 0.1 0.5 1.2 µs — 0.1 0.2 µs tC(on) VCC = 300V, IC = 75A, — 0.15 0.3 µs toff Tj = 125°C, Inductive Load — 1.1 2.0 µs tC(off) — 0.2 0.4 µs ICES VCE = VCES, VD = 15V, VCIN = 15V, Tj = 25°C — — 1.0 mA — — 10 mA VD = 15V, VCIN = 15V, VN1-VNC — 6.5 12 mA VD = 15V, VCIN = 15V, V*P1-V*PC — 1.6 4 mA VCE = VCES, VD = 15V, VCIN = 15V, Tj = 125°C Control Part Circuit Current ID Input ON Threshold Voltage Vth(on) Applied between UP-VUPC, 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) VP-VVPC, UN- VN- WN-Br-VNC 1.7 2.0 2.3 Volts SC -20°C ≤ Tj ≤ 125°C, VD = 15V 112 — — Amperes toff(SC) VD = 15V — 0.2 — µs Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection OT Trip Level 135 — — °C (Detect Temperature of IGBT) OT(hys) Hysteresis — 20 — °C Supply Circuit Under-voltage Protection UVt Trip Level 11.5 12.0 12.5 Volts (-20°C ≤ Tj ≤ 125°C) UVr Reset Level — 12.5 — Volts Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA tFO VD = 15V 1.0 1.8 — ms Fault Output Pulse Width*2 *2 Fault output is given only when the internal SC, OT and UV protections schemes of either upper or lower devide operate to protect it. Fault output of SC protection given pulse. Fault output of OT, UV protection given pulse while over trip level. 03/11 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com PM75B4L1C060 Photo Voltaic IPM H-Bridge 75 Amperes/600 Volts Thermal Characteristics, Tj = 25°C unless otherwise specified Characteristic Junction to Case Thermal Resistance Contact Thermal Resistance Symbol Min. Typ. Max. Units Rth(j-c)Q Inverter IGBT (Per 1 Element)*1 — — 0.62 °C/Watt Rth(j-c)D Inverter FWDi (Per 1 Element)*1 — — 1.06 °C/Watt — 0.060 — °C/Watt Value Units Rth(c-f) Condition Case to Fin (Per 1 Element)*1, Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Inverter Supply Voltage VCC Applied across P-N Terminals ≤450 Volts Control Supply Voltage*3 VD Applied between VUP1-VUPC, 15.0 ± 1.5 Volts Input ON Voltage VCIN(on) Applied between UP-VUPC, ≤0.8 Volts Input OFF Voltage VVP1-VVPC, VN1-VNC VCIN(off) VP-VVPC, UN- VN- WN-Br-VNC ≥9.0 Volts PWM Input Frequency fPWM Using Application Circuit Input Signal of IPM, ≤20 kHz Arm Shoot-through Blocking Time tDEAD ≥2.0 µs 3-Phase Sinusoidal PWM VVVF Inverter For IPMs Each Input Signals *1 When using this value, Rth(s-a) should be measured just under the chips. *3 With ripple satisfying the following conditions: dv/dt swing ≤5V/µs ; variation ≤2V peak-to-peak. 4 03/11 Rev. 0