Power Management Switch ICs for PCs and Digital Consumer Products Controller ICs for High Side NMOSFET No.11029EBT01 BD2270HFV ●Description The BD2270HFV is an IC with a single built-in external N-channel MOSFET driver circuit. This IC has a built-in charge pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel MOSFET drive without using any external parts. In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up sequence. The space saving type of HVSOF5 package is used. ●Features 1) Built-in charge pump 2) Built-in discharge circuit for output charge 3) Soft start circuit 4) Built-in comparator with hysteresis function at control input terminal 5) Compact HVSOF5 package 6) Operating current 50μA 7) Standby current 5μA 8) Possible to drive N-channel power MOSFET ●Applications PCs, PC peripheral devices, digital consumer electronics, etc. ●Absolute Maximum Ratings Parameter Symbol Ratings Unit Supply voltage VCC -0.3 ~ 6.0 V AEN voltage VAEN -0.3 ~ 6.0 V DISC voltage VDISC -0.3 ~ 6.0 V GATE voltage VGATE -0.3 ~ 15.0 V Storage temperature range TSTG -55 ~ 150 °C Pd 669*1 mW Power dissipation *1 When mounted on a 70 mm70 mm1.6 mm glass epoxy PCB, derated at 5.352 mW/C above Ta25C *2 This IC is not designed to be radiation-proof. ●Operating Conditions Parameter Symbol Ratings Unit Operating voltage range VCC 2.7 ~ 5.5 V Operating temperature range TOPR -25 ~ 85 °C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/12 2011.05 - Rev.B Technical Note BD2270HFV ●Electrical Characteristics (Vcc =3.0V, Ta=25°C unless otherwise specified) Parameter Limits Symbol Min. Typ. Max. Unit Condition Operating current ICC - 50 75 μA VAEN = 2.5V Standby current ISTB - 5 10 μA VAEN = 0V VAENH 1.55 2 2.45 V High level input VAENL 1.35 1.9 2.35 V Low level input IAEN - 3 5 μA VAEN = 3V 10 13.5 15 V VCC=5V VGATE 6.6 9.5 9.9 V VCC=3.3V 6 8.5 9 V VCC=3V AEN input voltage AEN input current GATE output voltage GATE rise time TON - 130 750 μs GATE fall time TOFF - 18 60 μs DISC discharge resistance RDISC - 200 300 Ω CGATE=500pF VCC=3Ｖ VGATE > 4V CGATE = 500pF VCC=3V VGATE < 0.5V VAEN=0V ●Measurement Circuit VCC GATE AEN ON/OFF C GATE DISC GND BD2270HFV Fig.1 Measurement Circuit ●Timing Diagram VAEN VAENH TON2 VAENL TON1 TOFF VCC+2V VGATE VCC+1V 0.5V Fig.2 Timing Diagram www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/12 2011.05 - Rev.B Technical Note BD2270HFV ●Reference Data 140 140 Ta=25°C OPERATING CURRENT : IDD [μA] 100 100 80 60 40 20 0 3 4 5 SUPPLY VOLTAGE : VCC[V] 10 80 60 40 20 0 ENABLE INPUT VOLTAGE : VAEN[V] 0 6 4 2 0 Low to High 2.0 1.0 1.0 0.5 0.5 0.0 0.0 2 3 4 5 SUPPLY VOLTAGE : VCC[V] -50 6 10.0 14 VCC=3.0V AEN INPUT CURRENT : IAEN[μA] Ta=25°C 8.0 6.0 4.0 2.0 8.0 6.0 4.0 2.0 0.0 0.0 -50 6 Fig.9 AEN Input Current 14 6 4 2 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.12 GATE Output Voltage www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6 4 2 0 Fig.10 AEN Input Current Fig.11 GATE Output Voltage 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 300 VCC=3.0V 250 200 150 100 50 0 0 8 2 DISC ON RESISTANCE : RDISC[Ω] 8 10 Ta=25°C DISC ON RESISTANCE : RDISC[Ω] 10 Ta=25°C 12 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 300 VCC=3.0V 12 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.8 AEN Input Voltage Fig.7 AEN Input Voltage 10.0 -50 High to Low 1.5 1.5 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 3 4 5 SUPPLY VOLTAGE : VCC[V] Low to High 2.0 High to Low Fig.6 Standby Current AEN Disable AEN INPUT CURRENT : IAEN[μA] VCC=3.0V 2.5 2.5 GATE OUTPUT VOLTAGE : VGATE [V] OPERATING CURRENT : ISTB [μA] 8 6 3.0 Ta=25°C 10 2 3 4 5 SUPPLY VOLTAGE : VCC[V] Fig.5 Standby Current AEN Disable 3.0 12 GATE OUTPUT VOLTAGE : VGATE[V] 2 Fig.4 Operating Current AEN Enable VCC=3.0V -50 4 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.3 Operating Current AEN Enable 14 6 2 0 -50 6 8 ENABLE INPUT VOLTAGE : VAEN[V] 2 Ta=25°C 12 OPERATING CURRENT : ISTB[μA] 120 120 OPERATING CURRENT : IDD[μA] 14 VCC=3.0V 2 3 4 5 SUPPLY VOLTEGE : VCC[V] 6 Fig.13 DISC ON Resistance 3/12 250 200 150 100 50 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.14 DISC ON Resistance 2011.05 - Rev.B Technical Note BD2270HFV 200 Ta=25°C, CGATE=500pF 350 120 80 40 TURN ON TIME2 : TON2[μs] 160 0 160 120 80 40 3 4 5 SUPPLY VOLTAGE : VCC[V] 6 -50 Fig.15 GATE Rise Time 1 250 200 150 100 50 2 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 3 4 5 SUPPLY VOLTAGE : VCC[V] Fig.16 GATE Rise Time 1 350 20 TURN OFF TIME : TOFF[μs] 250 200 150 100 50 VCC=3.0V, CGATE=500pF TURN OFF TIME : TOFF[μs] Ta=25°C, CGATE=500pF 300 16 12 8 4 2 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 3 4 5 SUPPLY VOLTAGE : VCC[V] Fig.18 GATE Rise Time 2 12 8 4 -50 6 Fig.19 GATE Fall Time 100.0 16 0 0 0 6 Fig.17 GATE Rise Time 2 20 VCC=3.0V, CGATE=500pF TURN ON TIME2 : TON2[μs] 300 0 0 2 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.20 GATE Fall Time 100.0 VCC=3.0V GATE DRIVE CURRENT : IG[μA] VCC=5.0V GATE DRIVE CURRENT : IG[μA] Ta=25°C, CGATE=500pF VCC=3.0V, CGATE=500pF TURN ON TIME1 : TON1[μs] TURN ON TIME1 : TON1[μs] 200 10.0 1.0 0.1 10.0 1.0 0.1 0 2 4 6 8 GATE VOLTAGE ABOVE SUPPLY : VGATE[V] Fig.21 GATE Drive Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 2 4 6 GATE VOLTAGE ABOVE SUPPLY : VGATE[V] 8 Fig.22 GATE Drive Current 4/12 2011.05 - Rev.B Technical Note BD2270HFV ●Waveform Data VAEN (5V/div) VCC=3.0V CGATE=500pF VGATE (2V/div) VAEN (5V/div) VCC=3.0V CGATE=500pF VGATE (2V/div) VAEN (5V/div) VCC=3.0V CGATE=500pF VGATE (2V/div) TIME (1ms/div) TIME (100μs/div) TIME (5μs/div) Fig.23 GATE Rise / Fall Characteristics Fig.24 GATE Rise Characteristics Fig.25 GATE Fall Characteristics VAEN (5V/div) VCC=3.0V RTF025N03 VAEN (5V/div) VAEN (5V/div) CL = 100μF VGATE VGATE VOUT_SWITCH (2V/div) VCC=3.0V RTF025N03 VCC=3.0V RTF025N03 VGATE VOUT_SWITCH VOUT_SWITCH (2V/div) (2V/div) TIME (100μs/div) TIME (5μs/div) TIME (20ms/div) Fig.26 GATE Switch Rise Characteristics Fig.27 GATE Switch Fall Characteristics Fig.28 GATE Switch Fall Characteristics VAEN (5V/div) VCC=3.0V RSS130N03 VAEN (5V/div) VCC=3.0V RSS130N03 VGATE VGATE VOUT_SWITCH VOUT_SWITCH (2V/div) (2V/div) TIME (100μs/div) TIME (10μs/div) Fig.29 GATE Switch Rise Characteristics Fig.30 GATE Switch Fall Characteristics MOSFET : RTF025N03 RSS130N03 3.3V V OUT_SWIT CH V IN_SWIT CH CL 1uF VCC ON/OFF GATE DISC AEN GND BD2270HFV Fig.31 Switch Rise / Fall Characteristics Measurement Circuit Diagram www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/12 2011.05 - Rev.B Technical Note BD2270HFV ●Block Diagram GATE VCC OSC Charge Pump (x3) GND DISC Control AEN Fig.32 Block Diagram VCC 1 GND 2 AEN 3 5 GATE 4 DISC Fig.33 Pin Configuration ●Pin description PIN No. 1 2 PIN name VCC GND I/O - 3 AEN I 4 DISC O 5 GATE O Function Power input terminal Ground terminal Control input terminal Turn ON the external MOSFET switch with high level input. High level input 2.0V, Low level input 0.8V Switch output discharge terminal GATE drive output terminal Used to connect the gate of the external N-channel MOSFET. ●I/O circuit Pin name Pin No. AEN 3 DISC 4 GATE 5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Equivalent circuit 6/12 2011.05 - Rev.B Technical Note BD2270HFV ●Functional Description The BD2270HVF is a driver IC to use an N-channel MOSFET as a high side load switch. This IC incorporates the following functions. 1. GATE drive A voltage to drive the gate of N-channel MOSFET is generated by a built-in charge pump in the BD2270HFV. The built-in charge pump in the BD2270HFV generates a voltage three times as high as the power supply voltage at the GATE terminal. In addition, since this IC has a built-in capacitor for the charge pump, it needs no external parts. The charge pump operates when the AEN is set to High. When the AEN is set to Low, the GATE terminal voltage is fixed to the GND level. 2. Output discharge circuit The output discharge circuit is enabled when the AEN is set to Low. When the discharge circuit is activated, the 200Ω(Typ.) MOSFET switch located between the DISC terminal and the GND terminal turns ON. Connecting between the DISC terminal and the source side (load side) of the N-channel MOSFET makes it possible to immediately discharge capacitive load. 3. Soft start function When the AEN terminal input voltage reaches the High level, the built-in charge pump in the BD2270HFV charges the gate of the N-channel MOSFET. The turn-on time of the N-channel MOSFET is determined by the GATE capacity. In addition, connecting a capacitor to the GATE terminal makes it possible to slow the rise of turn-on time of the N-channel MOSFET, thus achieving reduction of the inrush current to a large capacitive load. 4. Analog control input terminal The AEN input of the BD2270HFV is connected to the built-in hysteresis comparator. Consequently, even analog signals can control the BD2270HFV, thus facilitating the control of the switch ON-OFF sequence. VCC VIN_SWITCH VAEN VGATE VOUT_SWITCH 放電回路 Discharge circuit ON OFF ON Fig. 34 Operation Timing * To turn ON the power supply (VCC, VIN_SWITCH), set the AEN to Low. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/12 2011.05 - Rev.B Technical Note BD2270HFV ●Application Circuit 1. Configuration of 3.3V load switch V IN_SWITCH 3.3V ON/OFF V OUT_SWITCH VCC GATE DISC AEN GND 3.3V Load BD2270HFV Fig.35 Configuration of 3.3V Load Switch 2. Configuration of 5V load switch 5V 5V Load ON/OFF VCC GATE DISC AEN GND BD2270HFV Fig.36 Configuration of 5V Load Switch A 5V load switch can be configured like the 3.3V load switch. However, if the external N-channel MOSFET is low VGSS, clamp it with Zener diode and the like. 3. Configuration of low-voltage load switch 1.2V 1.2V Load 3.3V ON/OFF VCC GATE DISC AEN GND BD2270HFV Fig.37 Configuration of Low-voltage Load Switch Providing BD2270HFV drive power supply enables configuration of a low-voltage load switch. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/12 2011.05 - Rev.B Technical Note BD2270HFV 4. Soft start configuration 3.3V ON/OFF 3.3V Load VCC GATE DISC AEN GND BD2270HFV Fig.38 Soft Start Configuration Connecting an external capacitor to the GATE terminal of the BD2270HFV makes it possible to slow the rise of the N-channel MOSFET, thus achieving reduction of the inrush current to the large-capacity capacitor mounted on the load side. ●Application Information This system connection diagram gives no warranty to the operation as application. To change the external circuit constant or else and use this IC, determine the application allowing for an adequate margin with consideration given to variations in external parts and ICs including not only static characteristics but also transient characteristics. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/12 2011.05 - Rev.B Technical Note BD2270HFV ●Thermal Derating Characteristics (HVSOF5) 800 POWER DISSIPATION : Pd (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (℃) Fig. 39 Power dissipation curve (Pd-Ta Curve) Mounted on a 70 mm70 mm1.6 mm glass epoxy PCB www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/12 2011.05 - Rev.B Technical Note BD2270HFV ●Notes for use (1) Absolute Maximum Ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety measures including the use of fuses, etc. (2) Operating conditions These conditions represent a range within which characteristics can be provided approximately as expected. The electrical characteristics are guaranteed under the conditions of each parameter. (3) Reverse connection of power supply connector The reverse connection of power supply connector can break down ICs. Take protective measures against the breakdown due to the reverse connection, such as mounting an external diode between the power supply and the IC’s power supply terminal. (4) Power supply line Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this regard, for the digital block power supply and the analog block power supply, even though these power supplies has the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus suppressing the diffraction of digital noises to the analog block power supply resulting from impedance common to the wiring patterns. For the GND line, give consideration to design the patterns in a similar manner. Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal. At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus determining the constant. (5) GND voltage Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric transient. (6) Short circuit between terminals and erroneous mounting In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or between the terminal and the power supply or the GND terminal, the ICs can break down. (7) Operation in strong electromagnetic field Be noted that using ICs in the strong electromagnetic field can malfunction them. (8) Inspection with set PCB On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress. Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention to the transportation and the storage of the set PCB. (9) Input terminals In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the guaranteed value of electrical characteristics. (10) Ground wiring pattern If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well. (11) External capacitor In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc. (12) Thermal design Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of use. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 11/12 2011.05 - Rev.B Technical Note BD2270HFV ●Ordering part number B D 2 Part No. 2 7 0 Part No. H F V - Package HFV: HVSOF5 T R Packaging and forming specification TR: Embossed tape and reel HVSOF5 (0.3) 4 (0.91) 4 5 (0.41) 5 0.2MAX 1.0±0.05 (0.05) (0.8) Tape Embossed carrier tape Quantity 3000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 3 2 1 1 2 3 1pin 0.13±0.05 S +0.03 0.02 −0.02 1.6±0.05 0.6MAX 1.2±0.05 (MAX 1.28 include BURR) <Tape and Reel information> 1.6±0.05 0.1 S 0.5 0.22±0.05 0.08 Direction of feed M (Unit : mm) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Reel 12/12 ∗ Order quantity needs to be multiple of the minimum quantity. 2011.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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