AP9997GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
S
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product SOT-223
D
BVDSS
100V
RDS(ON)
120mΩ
ID
3.2A
G
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
The SOT-223 package is designed for suface mount
application, larger heatsink than SO-8 and SOT package.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
100
V
+20
V
Continuous Drain Current
3
3.2
A
Continuous Drain Current
3
2.6
A
20
A
2.8
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient3
45
℃/W
Data and specifications subject to change without notice
1
201006153
AP9997GK-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
100
-
-
V
VGS=10V, ID=3A
-
-
120
mΩ
VGS=4.5V, ID=2A
-
-
200
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=3A
-
3
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=80V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=3A
-
14
22
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
5.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=50V
-
4.5
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=50Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=25V
-
65
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
IS=1.5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
39
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
62
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9997GK-HF
20
20
T A =25 o C
12
8
V G =3.0V
4
10V
7.0V
5.0V
16
ID , Drain Current (A)
16
ID , Drain Current (A)
T A =150 o C
10V
7.0V
5.0V
4.5V
4.5V
12
8
V G =3.0V
4
0
0
0
1
2
3
4
5
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
140
ID=3A
V G =10V
ID=2A
T A =25 o C
130
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
120
110
100
1.6
1.2
20
0.8
90
80
0.4
2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
10
1.6
8
o
VGS(th) (V)
IS (A)
1.4
6
o
T j =150 C
T j =25 C
1.2
4
1
2
0.8
0
0.6
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9997GK-HF
f=1.0MHz
12
10000
I D =3A
V DS =80V
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
10
C iss
6
100
4
C oss
C rss
2
10
0
0
4
8
12
16
1
20
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthja)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Operation in this area
limited by RDS(ON)
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
0.01
0.01
0.1
1
10
100
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 120℃/W
0.001
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4