AP04N20GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
200V
RDS(ON)
1.2Ω
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
1A
S
D
Description
AP04N20 uses rugged design with the best combination of fast
switching and cost-effectiveness.
S
D
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
G
SOT-223
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
200
V
+20
V
Continuous Drain Current, V GS @ 10V
3
1
A
Continuous Drain Current, V GS @ 10V
3
0.8
A
4
A
2.7
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Unit
45
℃/W
1
201010121
AP04N20GK-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
200
-
-
V
VGS=10V, ID=1A
-
-
1.2
Ω
VGS=4.5V, ID=0.6A
-
-
1.3
Ω
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=1A
-
2.8
-
S
IDSS
Drain-Source Leakage Current
VDS=160V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=1A
-
8.5
14
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=160V
-
1.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.1
-
nC
2
td(on)
Turn-on Delay Time
VDD=100V
-
4
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=10V
-
6.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
225
360
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
15
-
pF
Min.
Typ.
IS=1A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=1A, VGS=0V,
-
90
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
260
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP04N20GK-HF
8
4
10V
7.0V
6.0V
5.0V
V G =4.0V
ID , Drain Current (A)
6
4
2
3
2
1
0
0
0
4
8
12
16
0
20
V DS , Drain-to-Source Voltage (V)
5
10
15
20
25
30
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.6
I D =1A
V G =10V
I D =1mA
Normalized RDS(ON)
1.4
Normalized BVDSS (V)
10V
7.0V
6.0V
V G =5 .0V
o
T A =150 C
ID , Drain Current (A)
o
T A =25 C
1.2
1
2
1
0.8
0.6
0
0.4
-50
0
50
100
-50
150
o
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
4
2
I D =250uA
Normalized VGS(th) (V)
1.6
IS (A)
3
T j = 150 o C
T j = 25 o C
2
1.2
0.8
1
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP04N20GK-HF
12
10
300
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
400
I D =1A
V DS =160V
6
C iss
200
4
100
2
0
C oss
C rss
0
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
1
Normalized Thermal Response (R thja)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
100us
ID (A)
1ms
10ms
100ms
0.1
1s
0.01
DC
T A =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
Rthja = 120℃/W
0.001
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4