AP2608AGK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
G
BVDSS
150V
RDS(ON)
1.5Ω
ID
0.92A
S
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
S
D
SOT-223
G
The SOT-223 package is designed for suface mount application,
larger heatsink than SO-8 and SOT package.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
3
Continuous Drain Current , VGS @ 10V
3
Continuous Drain Current , VGS @ 10V
1
Rating
Units
150
V
+20
V
0.92
A
0.74
A
3
A
2.8
W
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
45
℃/W
1
201108112
AP2608AGK-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
150
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=0.5A
-
-
1.5
Ω
VGS=4.5V, ID=0.2A
-
-
1.8
Ω
0.8
-
2.5
V
-
1.4
-
S
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=0.5A
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=120V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=0.5A
-
5
8
nC
Qgs
Gate-Source Charge
VDS=75V
-
0.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
1.2
-
nC
td(on)
Turn-on Delay Time
VDS=75V
-
3
-
ns
tr
Rise Time
ID=0.5A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
12
-
ns
tf
Fall Time
VGS=10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
180
288
pF
Coss
Output Capacitance
VDS=15V
-
17
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
13
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.3
6.6
Ω
Min.
Typ.
IS=0.9A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=1A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
37
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2608AGK-HF
2.8
2
o
2
10V
7.0V
6.0V
5.0V
V G = 4.0V
1.6
ID , Drain Current (A)
2.4
ID , Drain Current (A)
o
T A = 150 C
10V
7.0V
6.0V
5.0V
V G = 4.0V
T A = 25 C
1.6
1.2
1.2
0.8
0.8
0.4
0.4
0
0
0
2
4
6
0
8
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I D =0.5A
V G =10V
I D =1mA
Normalized RDS(ON)
Normalized BVDSS (V)
2.0
1.1
1
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
2
I D =250uA
1.2
T j =150 o C
Normalized VGS(th) (V)
IS(A)
1.6
T j =25 o C
0.8
1.2
0.8
0.4
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2608AGK-HF
f=1.0MHz
300
10
8
200
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =0.5A
V DS =75V
C iss
4
100
2
C oss
C rss
0
0
0
1
2
3
4
1
5
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100us
ID (A)
1
Normalized Thermal Response (Rthja)
10
1ms
10ms
100ms
0.1
1s
0.01
DC
o
T A =25 C
Single Pulse
0.001
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 120℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4