Data Sheet Ultra Low Capacitance ESD Protection Diode RSAC18CS lApplications ESD Protection lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.55 0.45 0.16±0.05 0.6±0.05 0.45 1.0±0.05 0.9±0.05 0.5 lFeatures 1)Ultra small mold type.(VMN2) 2)Low capacitance. 3)High reliability. 4)Bi chip-mounter,automatic mounting is possible. VMN2 0.156 0.37±0.03 0.35±0.1 lConstruction Silicon epitaxial planer lStructure ROHM : VMN2 dot (year week factory) lTaping dimensions (Unit : mm) 2±0.05 0.7±0.05 2±0.05 φ 1.55 0.2±0.05 8.0±0.2 1.1±0.05 3.5±0.05 1.75±0.1 4±0.1 φ 0.5 lAbsolute maximum ratings (Ta=25C) Parameter Symbol Power dissipation P Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol Vz Zener voltage 0.52 4.0±0.1 Limits 100 150 Unit mW C C -55 to +150 Conditions Min. Typ. Max. Unit 18.20 - 19.35 V IZ=2mA VR=13V VR=0V , f=1MHz Reverse current IR - - 0.1 nA Capacitance between terminals Ct - 0.3 - pF *1) Zener voltage (VZ) shall be measured at 40ms after loading current. *2) Electrical characteristic assurance is just only zener direction. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.10 - Rev.A Data Sheet RSAC18CS 10 10000 Ta=150°C REVERSE CURRENT:IR (pA) ZENER CURRENT:Iz(mA) Ta=125°C Ta=25°C 1 Ta=150°C Ta=75°C 0.1 1000 100 Ta=125°C 10 Ta=75°C 1 Ta=25°C 0.01 0.1 10 15 20 25 0 5 10 20 10 f=1MHz Ta=25°C IZ=2mA n=30pcs ZENER VOLTAGE:Vz(V) 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 15 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 1 18 AVE:18.66V 17 16 0.1 15 0 1 2 3 4 5 6 Vz DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 0.5 REVERSE CURRENT:IR(pA) Ta=25°C VR=13V n=30pcs AVE:16.29pA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=25°C f=1MHz VR=0V n=10pcs 0.4 0.3 AVE:0.31pF 0.2 0.1 0 10 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.10 - Rev.A Data Sheet RSAC18CS 1000 10000 Rth(j-a) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) DYNAMIC IMPEDANCE:Zz(Ω) On glass-epoxy substrate 1000 100 1 100 10 0.001 10 0.1 Rth(j-c) 10 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:0.96kV 0 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A