RB451F Diodes Schottky barrier diode RB451F !External dimensions (Units : mm) 2.0±0.2 0.9±0.1 1.3±0.1 0.65 2.1±0.1 0.65 0.3 1.25±0.1 !Features 1) Small surface mounting type. (UMD3) 2) Low VF. (VF=0.45V Typ. at 100mA) 3) High reliability. 0~0.1 0.15±0.05 3C 0.3±0.1 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 !Circuit !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit Peak reverse voltage Parameter VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A IFSM 1 A Peak forward surge current∗ Junction temperature Tj 125 °C Storage temperature Tstg −40~+125 °C ∗ 60Hz for 1 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions VF1 − − 0.55 V VF2 − − 0.34 V IF=10mA Reverse current IR − − 30 µA VR=10V Capacitance between terminals CT − 6.0 − pF VR=10V, f=1MHz Forward voltage Note) ESD sensitive product handling required. 0.6 IF=100mA 0.1Min. !Applications Low power rectification RB451F Diodes REVERSE CURRENT : IR (A) 100m °C °C 25 −2 5 Ta =1 2 °C 5°C 10m 1m 100µ 10µ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE : VF (V) Fig. 1 Forward characteristics Io CURRENT (%) 100 80 60 40 20 0 0 10m Typ. pulse measurement 75 FORWARD CURRENT : IF (A) 1 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) 1m Typ. pulse measurement Ta=125°C 100µ 75°C 10µ 25°C 1µ 0.1µ 0 5 10 15 20 25 30 35 CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta = 25°C) 100 10 1 0.1 0 5 10 15 20 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 25