BL GALAXY ELECTRICAL

BL GALAXY ELECTRICAL
SMALL SIGNAL SWITCHING DIODE
1N4148
REVERSE VOLTAGE : 75 V
CURRENT: 0.15 A
FEATURES
Silicon epitaxial planar diode
DO-35(GLASS)
High speed switching diode
500 m W power dissipation
These diodes are also available in glass case
DO-34. Mini-MELF
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resist.load
@TA =25 and f 50Hz
Forw ard surge current @ t<1s and TJ =25
Pow er dissipation
@ TA =25
Junction temperature
Storage temperature range
1N4148
UNITS
VR
V RM
75.0
100.0
V
V
IAV
150.0
mA
IFSM
Ptot
TJ
TSTG
500.0
mA
mW
500 1)
175
-55 --- +175
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage at IF=10mA
Leakage current
@ V R=20V
@ V R=75V
@ V R=20V TJ =150
Capacitance
@ V F=V R=0V
Voltage rise w hen sw itching on
tested w ith 50mA pulses
tp=0.1μs. Rise time<30ns. fp=5 to 100KHz
Reverse recovery time
from IF=10mA to IR=1mA
V R=6V. RL=100Ω.
Thermal resistance junction to ambient
Rectification efficiency at 100MHz,V RF=2V
VF
MIN
-
TYP
-
MAX
1.0
UNITS
V
IR
IR
IR
CJ
-
-
25.0
5.0
50.0
4
nA
μA
μA
pF
Vf r
-
-
2.5
V
trr
-
-
4
ns
-
3501)
-
K/W
-
RθJA
ηv
0.45
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
Document Number 0268001
BLGALAXY ELECTRICAL
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1.
RATINGS AND CHARACTERISTIC CURVES
1N4148
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE
FIG.2 -- FORWARD CHARACTERISTICS
mA
mW
10
1000
3
900
10 2
800
Ptot
700
IF
600
T J =100
10
T J =25
500
1
400
300
10
200
-1
100
0
0
100
10 -2
200℃
1
0
TA
VF
2V
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T
IFSM
10
tp
n=0
0.1
0.2
0.5
1
T=1/fp
IFSM
T
0.1
10
-5
10
-3
10
-2
10
-1
1
10S
tp
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Document Number 0268001
BLGALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT CIRCUIT
1N4148
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
D.U.T.
60
TJ=25
f=1MHz
1.0
VRF=2V
2nF
5K
VO
Ctot(VR)
Ctot(OV)
0.9
0.8
0.7
0
2
4
6
8
10V
VR
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS FORWARD CURRENT
nA
10
10 4
4
TJ=25℃
f=1KHz
10 3
r
10 2
10
3
10
2
F
10
10
VR=20V
1
1
Document Number 0268001
0
100
200℃
BL GALAXY ELECTRICAL
10
-2
10
-1
1
10
IF
10
2
mA
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3.