BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1N4148 REVERSE VOLTAGE : 75 V CURRENT: 0.15 A FEATURES Silicon epitaxial planar diode DO-35(GLASS) High speed switching diode 500 m W power dissipation These diodes are also available in glass case DO-34. Mini-MELF MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient temperature unless otherwise specified. MAXIMUM RATINGS Reverse voltage Peak reverse voltage Average forw ard rectified current half w ave rectification w ith resist.load @TA =25 and f 50Hz Forw ard surge current @ t<1s and TJ =25 Pow er dissipation @ TA =25 Junction temperature Storage temperature range 1N4148 UNITS VR V RM 75.0 100.0 V V IAV 150.0 mA IFSM Ptot TJ TSTG 500.0 mA mW 500 1) 175 -55 --- +175 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage at IF=10mA Leakage current @ V R=20V @ V R=75V @ V R=20V TJ =150 Capacitance @ V F=V R=0V Voltage rise w hen sw itching on tested w ith 50mA pulses tp=0.1μs. Rise time<30ns. fp=5 to 100KHz Reverse recovery time from IF=10mA to IR=1mA V R=6V. RL=100Ω. Thermal resistance junction to ambient Rectification efficiency at 100MHz,V RF=2V VF MIN - TYP - MAX 1.0 UNITS V IR IR IR CJ - - 25.0 5.0 50.0 4 nA μA μA pF Vf r - - 2.5 V trr - - 4 ns - 3501) - K/W - RθJA ηv 0.45 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. Document Number 0268001 BLGALAXY ELECTRICAL www.galaxycn.com 1. RATINGS AND CHARACTERISTIC CURVES 1N4148 FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS mA mW 10 1000 3 900 10 2 800 Ptot 700 IF 600 T J =100 10 T J =25 500 1 400 300 10 200 -1 100 0 0 100 10 -2 200℃ 1 0 TA VF 2V FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFSM 10 tp n=0 0.1 0.2 0.5 1 T=1/fp IFSM T 0.1 10 -5 10 -3 10 -2 10 -1 1 10S tp www.galaxycn.com Document Number 0268001 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT 1N4148 FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE 1.1 D.U.T. 60 TJ=25 f=1MHz 1.0 VRF=2V 2nF 5K VO Ctot(VR) Ctot(OV) 0.9 0.8 0.7 0 2 4 6 8 10V VR FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT nA 10 10 4 4 TJ=25℃ f=1KHz 10 3 r 10 2 10 3 10 2 F 10 10 VR=20V 1 1 Document Number 0268001 0 100 200℃ BL GALAXY ELECTRICAL 10 -2 10 -1 1 10 IF 10 2 mA www.galaxycn.com 3.