BILIN LL4151

BL GALAXY ELECTRICAL
LL4151
REVERSE VOLTAGE : 50 V
CURRENT: 0.15 A
SMALL SIGNAL SWITCHING DIODE
FEATURES
MINI-MELF
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
φ1 .5±0.1
Cathode indification
MECHANICAL DATA
Case: MINI-MELF,glass case
0.4±0.1
3.4 +0.3
-0.1
Polarity: Color band denotes cathode
Weight: 0.031 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
UNITS
LL4151
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resistive load
VR=0V
Forw ard surge current @ tP=1µ s
Pow er dissipation
@ TA=25
Junction temperature
Storage temperature range
VR
VRM
IF(AV)
IFSM
Ptot
TJ
TSTG
50
75
V
V
1501)
mA
2.0
5001)
175
-55 --- +175
A
mW
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ IF=50mA
Leakage current
@ VR=50V
@ VR=50V TJ =150
Capacitance
@ V R=0V,f=1MHz,VHF=50mV
Reverse breakdown voltage
tested with 5μA pulses
Reverse recovery time
from IF=10mA to IR=10mA to IR=1mA
from IF=10mA to IR=1mA, VR=6V. RL=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V RF=2V
VF
MIN
-
TYP
0.8
MAX
1.0
UNITS
V
IR
IR
CJ
-
-
50
50
2.0
nA
μA
pF
V(BR)R
75.0
-
-
V
trr
-
-
RθJA
ηv
0.45
-
4
2
5001)
-
ns
ns
K/W
-
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Document Number 0268023
BLGALAXY ELECTRICAL
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1.
RATINGS AND CHARACTERISTIC CURVES
LL4151
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE
FIG.2 -- FORWARD CHARACTERISTICS
mA
10 3
mW
1000
900
800
Ptot
10 2
700
600
T J =100
I F 10
500
T J =25
400
1
300
200
10 -1
100
0
0
100
200℃
10 -2
TA
0
1
VF
2V
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T
IFRM
IFRM
tp
10
T=1/fp
n=0
T
0.1
0.2
1
0.5
0.1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10S
tp
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Document Number 0268023
BLGALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT CIRCUIT
LL4151
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
T J =25
f=1MHz
1.0
D.U.T.
60
Ctot(V R )
Ctot(OV)
VRF=2V
2nF
5K
VO
0.9
0.8
0.7
0
2
4
6
8
1 0V
VR
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS FORWARD CURRENT
nA
10
10 4
4
TJ=25℃
f=1MHz
10 3
10
r
10 2
F
10
10
3
2
10
V R =50V
1
0
10 0
20 0℃
1
10
-2
10
-1
1
10
IF
10
2
mA
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Document Number 0268023
BLGALAXY ELECTRICAL
3.