BL Galaxy Electrical Production specification NPN Epitaxial Planar Silicon Transistor FEATURES Pb Small size making it easy to z 2SC4272 Lead-free provide high-density,small-sized hybrid IC′s. ORDERING INFORMATION SOT-89 Type No. Marking Package Code 2SC4272 CH SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.0 A ICP Collector Current(Pulse) 1.5 A PC Collector Dissipation 500 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTG054 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Epitaxial Planar Silicon Transistor 2SC4272 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=10uA,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=10uA,IC=0 5 V Collector cut-off current ICBO VCB=40V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=500mA Collector-emitter saturation voltage VCE(sat) IC=0.5A, IB=0.05A 0.2 0.6 V Base-emitter saturation voltage VBE(sat) IC=0.5A, IB=0.05A 0.9 1.2 V Transition frequency fT VCE=10V,Ic=50mA Collector output capacitance Cob VCB=10V,IE=0,f=1MHz TYP 60 180 MAX UNIT 320 250 MHz 15 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTG054 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Epitaxial Planar Silicon Transistor 2SC4272 PACKAGE OUTLINE Plastic surface mounted package SOT-89 SOT-89 Dim Min Max A 4.5 4.7 B 2.3 2.7 C 1.5Typical D 0.35 0.55 E 1.4 1.6 F 0.4 0.6 H 1.55 1.75 J K 0.4Typical 4.15 4.25 All Dimensions in mm SOLDERING FOOTPRINT Unit:mm PACKAGE INFORMATION Device Package Shipping 2SC4272 SOT-89 1000/Tape&Reel Document number: BL/SSSTG054 Rev.A www.galaxycn.com 3