DTDG14GP Transistors Digital transistor (built in resistor and zener diode) Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A) 2) Low saturation voltage, VCE(sat)=0.4V (IC/IB=500mA/5mA) 3) Built-in zener diode to protect the transistor against reverse voltages when connected to alow load. 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 3.0±0.2 !Structure NPN digital transistor (with single built resistor and zener diode) ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : E01 !Absolute maximum ratings (Ta = 25°C) Parameter !Equivalent circuit Symbol Limits Unit Collector-base voltage VCBO 60±10 V Collector-emitter voltage VCEO 60±10 V Emitter-base voltage VEBO 5 V IC 1 A ICP 2 A(Pulse) Collector current (1) Base (2) Collector (3) Emitter (2) (1) R (3) ∗1 R=10kΩ 0.5 W Collector power dissipation PC Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 Pw≤10ms, Duty cycle≤1/2 ∗2 When mounted on a 40×40×0.7 mm ceramic board. 2 ∗2 (1) : Base (2) : Collector (3) : Emitter DTDG14GP Transistors !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 50 − 70 V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − 70 V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=720µA Conditions Collector cutoff current ICBO − − 0.5 µA VCB=40V Emitter cutoff current IEBO 300 − 580 µA VEB=4V VCE(sat) − − 0.4 V IC/IB=500mA/5mA DC current transfer ratio hFE 300 − − − VCE=2V, IC=500mA Emitter-base resistance R 7 10 13 kΩ Transition frequency fT − 80 − MHz Collector-emitter saturation voltage − VCE=5V, IE=−0.1A, f=30MHz ∗ ∗Transition frequency of the device !Packaging specifications Part No. Package MPT3 Packaging type Taping Code T100 Basic ordering unit (pieces) 1000 DTDG14GP 10 10k 2 PW =1 0 1 PW 500m m =1 s∗ 00 200m m DC 100m s∗ 50m 20m 10m 5m 14W×18l×0.8t(Units : mm) When mounted on glass epoxy 2m ∗Single pulse 1m 100m 200m 500m 1 2 5 10 2k 1k 500 200 100 VCE=5V 2V 1V 50 100 Safe operating area 10 10m 20m 50m 100m200m500m 1 2 1 100m 2 5 10 COLLECTOR CURRENT : IC (A) Fig.2 Ta=25°C 5 200m 20 20 10 500m 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ta=25°C 5k ICP DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) 5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves DC current gain vs. collector current IC/IB=200 100 50 50m 20m 10m 10m 20m 50m 100m 200m 500m 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current