DTC314TU / DTC314TK Transistors Digital transistors (built-in resistor) DTC314TU / DTC314TK !External dimensions (Units : mm) DTC314TU 2.0±0.2 0.65 0.65 0.7±0.1 2.1±0.1 (2) (3) !Structure NPN digital transistor (Built-in resistor type) 0.2 1.25±0.1 (1) ROHM : UMT3 EIAJ : SC-70 0~0.1 0.3 +0.1 0.15±0.05 −0 All terminals have same dimensions Abbreviated symbol : H04 2.9±0.2 DTC314TK 0.8±0.1 0.95 0.95 (2) 0~0.1 2.8±0.2 1.6 +0.2 −0.1 !Equivalent circuit (1) Emitter (2) Base (3) Collector 1.1+0.2 −0.1 1.9±0.2 (1) 0.4 +0.1 −0.05 All terminals have same dimensions +0.1 0.15 −0.06 Abbreviated symbol : H04 C B R1 E B : Base C : Collector E : Emitter !Absolute maximum ratings (Ta=25°C) Symbol Limits(DTC314T U ) Unit K Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 600 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 0.3~0.6 (3) ROHM : SMT3 EIAJ : SC-59 Parameter 0.9±0.1 1.3±0.1 0.1~0.4 !Features In addition to the features of regular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mV at IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. (1) Emitter (2) Base (3) Collector DTC314TU / DTC314TK Transistors !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 30 − − V Collector-emitter breakdown voltage BVCEO 15 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=20V Emitter cutoff current IEBO − − 0.5 µA VEB=4V VCE(sat) − 40 80 mV IC/IB=50mA/2.5mA DC current transfer ratio hFE 100 250 600 − VCE=5V, IC=50mA Input resistance R1 7 10 13 kΩ fT − 200 − MHz Ron − 1.5 − Ω Collector-emitter saturation voltage Transition frequency Output "ON" resistance Conditions IC=50µA − VCE=10V, IE=−50mA, f=100MHz ∗ VI=7V, RL=1kΩ, f=1kHz ∗ Transition frequency of the device !Packaging specifications Type Package UMT3 SMT3 Packaging type Taping Taping Code T106 T146 Basic ordering unit (pieces) 3000 3000 − DTC314TU − DTC314TK VCE=5V DC CURRENT GAIN : hFE 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 1 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current 1 100 lC/lB=20 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m Ta=25°C f=1kHz RL=1kΩ hFE=250(5V/50mA) 50 500m ON RESISTANCE : Ron (Ω) 1k 500 COLLECTOR SATURATION VOLTAGE : VCE(set) (V) !Electrical characteristic curves 20 10 5 2 1 500m 2m 200m 1m 100m 100m 200m 500m 1 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 2 5 10 20 50 100 INPUT VOLTAGE : VI (V) Fig.3 "ON" resistance vs. input voltage DTC314TU / DTC314TK Transistors !Ron measurement circuit IN RL OUT vi v0 Vl GND v0 Ron= ×RL vi-v0 Fig.4 Output "ON" resistance (Ron) measurement circuit