2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F !External dimensions (Units : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 3.0±0.2 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : DF 2SD1733 2SD1768S 0.65±0.1 0.75 2±0.2 3Min. 3±0.2 (15Min.) 9.5±0.5 0.5±0.1 2.5 0.9 2.3+−0.2 0.1 C0.5 1.5 1.5±0.3 4±0.2 6.5±0.2 5.1+−0.2 0.1 5.5+−0.3 0.1 0.45+0.15 −0.05 0.9 2.5 +0.4 −0.1 0.55±0.1 2.3±0.2 2.3±0.2 5 1.0±0.2 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SD1863 ROHM : SPT EIAJ : SC-72 3.2±0.2 7.8±0.2 6.9 9.2 10.8±0.2 16.0±0.5 Back φ3.19 1.2 4.4±0.2 14.5±0.5 0.9 (2) (1) Emitter (2) Collector (3) Base Front φ3.3 0.5±0.1 (1) +0.15 0.45 −0.05 2SD1381F 2.5±0.2 6.8±0.2 1.6 1.1 0.65Max. 0.5 (1) (2) (3) (1) (2) (3) 1.0 !Structure Epitaxial planer type NPN silicon transistor C0.7 0.95 1.75 0.8 (3) 2.54 2.54 1.05 0.45±0.1 2.3±0.5 2.3±0.5 0.7±0.1 1.76±0.5 (1) (2) (3) ROHM : ATV (1) Emitter (2) Collector (3) Base ROHM : TO-126FP (1) Emitter (2) Collector (3) Base 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V 1 A (DC) Parameter Collector current IC A (Pulse) ∗1 2 0.5 2SD1898 2 1 2SD1733 Collector power dissipation 2SD1768S ∗3 W 10 PC W (Tc=25˚C) 0.3 ∗2 W 1 2SD1863 1.2 5 2SD1381F W (Tc=25˚C) Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C ∗1 Pw=20ms, duty=1 / 2 ∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm ∗3 When mounted on a 40×40×0.7mm ceramic board. 2 or larger. !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 100 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 80 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 1 µA VCB=80V Emitter cutoff current IEBO VEB=4V 2SD1863 2SD1733, 2SD1898 DC current transfer ratio 2SD1768S hFE − − 1 µA 180 − 390 − 82 − 390 − 120 − 390 − 82 − 270 − VCE(sat) − 0.15 0.4 V Transition frequency fT − 100 − MHz Output capacitance Cob − 20 − pF 2SD1381F Collector-emitter saturation voltage * Measured using pulse current Conditions VCE=3V, IC=0.5A IC/IB=500mA/20mA VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors !Packaging specifications and hFE Package Taping Bulk Code T100 TL TP TV2 − Basic ordering unit (pieces) 1000 2500 5000 2500 2000 − − − − − − − − Type hFE 2SD1898 PQR 2SD1733 PQR − 2SD1768S QR − − 2SD1863 R − − − 2SD1381F PQ − − − − − − hFE values are classified as follows : Item P Q R hFE 82~180 120~270 180~390 !Electrical characteristic curves 10 1 6mA 1.0 5mA 0.8 4mA 3mA 0.6 2mA 0.4 1mA 0 0 0.1 10/1 0.05 0.02 0.01 0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current 2 4 6 IB=0mA 10 8 0 0 Ta=25˚C VCE=5V 500 200 100 50 20 10 5 2 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : −IE (mA) Fig.5 Gain bandwidth product vs. emitter current 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) IC/IB=20/1 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.2 100 Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics 0.5 VCE=3V 1V COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) 1.0 1000 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.0 DC CURRENT GAIN : hFE 100 Ta=25˚C Ta=25˚C Ta=25˚C Ta=25˚C VCE=5V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 1000 Ta=25˚C f=1MHz IE=0A Ic=0A 100 10 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors 5 10 20 50100 200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe operating area (2SD1863) 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50100200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SD1898) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 200m 5 2 1 Ic Max (Pulse) DC Ta=45˚C Single non-repetitive pulse 500m 200m 100m 50m s 2m 1m 0.1 0.2 0.5 1 2 500m 10 m =8 Pw 5m DC S 10m 1 S 0m 20m 2 Ic Max (Pulse) =1 100m 50m Ta=25˚C Single non-repetitive pulse 5 m 00 =1 S 0m 200m 10 Pw S 0 =1 500m 0m =1 DC Pw 1 Pw 2 Ic Max (Pulse) Pw Ta=25˚C Single non-repetitive pulse 5 COLLECTOR CURRENT : IC (A) 10 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SD1381F)